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NXP Semiconductors BUK754R3-40B,127
- Part No.:
- BUK754R3-40B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK754R3-40B,127.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,842
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Product details
Overview
BUK754R3-40B from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in TO-220AB (SOT78A) package, designed for automotive-critical 12 V load switching. It delivers 75 A continuous drain current at Tmb = 25 °C, features 4.3 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, and supports operation up to 175 °C junction temperature - enabling robust control of motors, lamps, and solenoids in engine compartments and body electronics.
For engineers reviewing the BUK754R3-40B datasheet, BUK754R3-40B pinout, BUK754R3-40B application, or BUK754R3-40B equivalent, key selection criteria include its 40 V VDS, low thermal resistance (Rth(j-mb) = 0.59 K/W), avalanche energy rating (961 mJ), gate-drive compatibility with standard 10 V logic, and qualification for automotive systems requiring high reliability under thermally demanding conditions.
Technical Context
This device uses TrenchMOS technology to achieve low on-state resistance while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V at 25 °C and remains functional down to 1 V at 175 °C, supporting stable turn-on across automotive temperature extremes.
The internal structure integrates a monolithic source-drain diode with 0.85 V forward voltage at 25 A and 68 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Thermal design is anchored to the mounting base (connected to drain), with transient thermal impedance optimized for pulsed power delivery up to 706 A peak drain current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - defines safe operating voltage ceiling for 12 V automotive systems with load-dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by TO-220AB package thermal capability, not silicon. |
| RDS(on) | 3.8–4.3 mΩ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements. |
| EAS | 961 mJ non-repetitive avalanche energy - sustains unclamped inductive switching events without failure. |
| Tj max | 175 °C - allows direct mounting in high-ambient zones like engine bays without derating penalties. |
| Rth(j-mb) | 0.59 K/W - enables efficient heat transfer to external heatsink, critical for sustained high-current operation. |
| QG(tot) | 69 nC - determines gate drive power and switching speed; compatible with standard MOSFET drivers. |
Pinout & Package
Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain terminal. Dimensions per IEC/JEDEC SC-46 outline; 3-lead configuration with screw-mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≥10 V for full enhancement; threshold range 2–4 V ensures reliable turn-on with standard logic. |
| 2 (D) | Drain | Main high-side current path; electrically tied to mounting base - must be isolated from PCB ground when heatsink is grounded. |
| 3 (S) | Source | Reference node for gate drive and current sensing; low-inductance bond wire (7.5 nH) minimizes switching oscillation. |
| Mounting base (mb) | Drain extension | Primary thermal interface; provides mechanical stability and low-resistance current path to heatsink - no separate drain lead required. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, lighting, and chassis systems. |
| 175 °C junction rating | Enables uninterrupted operation in under-hood environments where ambient exceeds 125 °C. |
| Low RDS(on) (4.3 mΩ typ.) | Reduces conduction losses by >30% vs. legacy 5–6 mΩ automotive MOSFETs, improving system efficiency. |
| 961 mJ avalanche energy | Eliminates need for external clamping diodes in motor and solenoid drive circuits with inductive kickback. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate voltage - compatible with common microcontroller GPIOs and driver ICs. |
Applications
| Engine Control Module (ECM) Load Switching | Automotive Lighting Driver |
|---|---|
Use Scenario: Switching fuel pump, radiator fan, or turbocharger actuator in engine bay under wide temperature and vibration conditions. IC Role / Device Role / Timing Role: High-current N-channel power switch controlling 12 V DC loads with fast turn-on/off timing (td(on) = 27 ns, tf = 65 ns). Use Value: 175 °C rating and AEC-Q101 compliance ensure functional safety and longevity despite thermal cycling and EMI exposure. |
Use Scenario: Driving high-power LED headlamps or adaptive front-lighting systems requiring PWM dimming and overcurrent protection. IC Role / Device Role / Timing Role: Low-loss power stage delivering up to 75 A peak current with minimal voltage drop during PWM on-cycles. Use Value: 4.3 mΩ RDS(on) limits power dissipation to <2 W at 70 A, enabling compact heatsink integration within lamp housing. |
| Body Control Module (BCM) Solenoid Actuation | Start-Stop System Starter Relay Replacement |
Use Scenario: Controlling door locks, trunk latches, or HVAC flaps using 12 V solenoids subject to repeated inductive switching stress. IC Role / Device Role / Timing Role: Rugged power switch absorbing repetitive unclamped inductive energy via integrated avalanche capability. Use Value: 961 mJ EAS withstands >10,000 cycles of solenoid de-energization without degradation - eliminating external snubbers. |
Use Scenario: Solid-state replacement for electromechanical starter relays in 12 V start-stop systems requiring ultra-fast, wear-free engagement. IC Role / Device Role / Timing Role: High-pulse-current switch handling 706 A peak drain current for cranking surge with <100 ns turn-off delay. Use Value: 0.59 K/W Rth(j-mb) enables rapid thermal recovery between start events, preventing thermal runaway during frequent restarts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A (Tc = 25 °C), RDS(on) = 2.2 mΩ - higher current, lower RDS(on), but DFN5x6 package requires PCB thermal vias. | Preferred for space-constrained modules needing higher current density; unsuitable for TO-220AB footprint reuse. | Select STL220N4F7AG only if board redesign permits DFN5x6 layout and thermal management supports 220 A. |
| IRF1404ZPBF | 40 V, 184 A (Tc = 25 °C), RDS(on) = 3.7 mΩ - similar RDS(on), but not AEC-Q101 qualified; Rth(j-mb) = 0.75 K/W. | Acceptable for industrial or consumer 12 V switching where automotive qualification is not mandated. | Choose IRF1404ZPBF for cost-sensitive non-automotive designs; avoid in safety-critical vehicle subsystems. |
Compared with STL220N4F7AG and IRF1404ZPBF, the BUK754R3-40B uniquely balances AEC-Q101 compliance, TO-220AB mechanical robustness, and 4.3 mΩ RDS(on) in a thermally optimized package - making it the preferred choice for drop-in replacement of legacy automotive switches without layout changes.
Availability
BUK754R3-40B is available at Aetrix Electronics and suitable for automotive body electronics, engine control modules, and industrial 12 V power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BUK754R3-40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The BUK754R3-40B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for high-reliability 12 V load switching in thermally aggressive environments such as engine compartments and chassis control units.
FAQ
What is the maximum continuous drain current rating for BUK754R3-40B?
The BUK754R3-40B supports 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C, as limited by the TO-220AB package thermal capability. At Tmb = 100 °C, the rating drops to 75 A due to thermal derating curves in Figure 1; peak pulsed current reaches 706 A for tp ≤10 µs. This rating is confirmed in Table 4 (Limiting Values) and Figure 1 of the official datasheet.
Is BUK754R3-40B qualified for automotive applications?
Yes, the BUK754R3-40B is explicitly AEC-Q101 qualified and designed for automotive-critical applications, as stated in Section 1.2 (Features and benefits) and validated per appropriate AEC standards. Its 175 °C junction rating, robust avalanche performance (961 mJ), and qualification documentation make it suitable for engine control, lighting, and body electronics per ISO/TS 16949 requirements.
What is the thermal resistance from junction to mounting base for BUK754R3-40B?
The BUK754R3-40B has a maximum thermal resistance of Rth(j-mb) = 0.59 K/W, as specified in Table 5 (Thermal characteristics). This value reflects the device's optimized thermal path from silicon die to the metal mounting base - critical for heatsink-integrated designs in automotive power modules and ensures efficient heat extraction under sustained load.
Does BUK754R3-40B have an integrated body diode, and what are its key parameters?
Yes, the BUK754R3-40B includes an integrated source-drain diode with VSD = 0.85 V (typ.) at IS = 25 A and Tj = 25 °C, and reverse recovery time trr = 68 ns at IS = 20 A, dIS/dt = −100 A/µs. These values are documented in Table 6 (Characteristics) and support efficient freewheeling in inductive load circuits without external diodes.
What gate drive voltage is required for full enhancement of BUK754R3-40B?
The BUK754R3-40B is a standard-level MOSFET requiring VGS = 10 V for full enhancement and minimum RDS(on). Its gate threshold voltage VGS(th) ranges from 2 V to 4 V at 25 °C (Table 6), ensuring reliable turn-on with common 5 V or 3.3 V logic-level drivers when used with gate boosters or level shifters - but full-rated performance demands 10 V.
BUK754R3-40B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4824 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 254W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK754R3-40B,127 FAQ
1.How can I place an order for BUK754R3-40B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK754R3-40B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK754R3-40B,127 reliable?
The price and inventory of BUK754R3-40B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK754R3-40B,127 is usually 5 days.
3.What payment methods are accepted for BUK754R3-40B,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK754R3-40B,127 transactions.
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4.How is shipping managed for BUK754R3-40B,127?
BUK754R3-40B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK754R3-40B,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK754R3-40B,127?
For technical support, including BUK754R3-40B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK754R3-40B,127 requirements.
6.How does Aetrix verify that BUK754R3-40B,127 is sourced from the original manufacturer or authorized distributors?
All BUK754R3-40B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK754R3-40B,127 meets industry standards.
7.What is the process for return or replacement of BUK754R3-40B,127?
All BUK754R3-40B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK754R3-40B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK754R3-40B,127 part is unused and in its original packaging.
Return procedure for BUK754R3-40B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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