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Nexperia USA Inc. BUK755R4-100E,127
- Part No.:
- BUK755R4-100E,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK755R4-100E,127.pdf
- Description:
- MOSFET N-CH 100V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,292
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Product details
Overview
BUK755R4-100E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in TO-220AB (SOT78A) package, designed for high-reliability automotive switching. It delivers 120 A continuous drain current at 25 °C mounting base temperature, 4.1 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, 100 V VDS rating, and operates up to 175 °C junction temperature - enabling use in electric power steering and transmission control modules.
For engineers reviewing the BUK755R4-100E datasheet, BUK755R4-100E pinout, BUK755R4-100E application, or BUK755R4-100E equivalent, key selection criteria include its true standard-level gate (VGS(th) > 1 V at 175 °C), repetitive avalanche rating, 0.43 K/W junction-to-mounting-base thermal resistance, and qualification for thermally demanding 12V/24V/48V automotive systems.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and robust switching performance under high-current, high-temperature conditions. Its gate threshold voltage remains functional above 1 V even at 175 °C, ensuring reliable turn-on in hot under-hood environments, and its 387 mJ non-repetitive avalanche energy rating supports unclamped inductive load handling.
The device features a drain-connected mounting base (TO-220AB SOT78A), enabling direct heatsink attachment with low thermal impedance. Internal parasitic inductances are tightly controlled (LD = 2.5 nH, LS = 7.5 nH), minimizing switching oscillation and improving EMI behavior in high-dI/dt motor control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - supports 48 V automotive bus systems with margin against transients and load dump events. |
| ID (continuous) | 120 A at Tmb = 25 °C - enables high-power solenoid and motor drive without parallel devices. |
| RDS(on) | 4.1 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - reduces conduction loss and heat generation in high-current paths. |
| EAS | 387 mJ non-repetitive avalanche energy - withstands inductive kickback in transmission valve control without external snubbers. |
| Tj max | 175 °C - allows operation in engine bay locations where ambient exceeds 125 °C. |
| Rth(j-mb) | 0.43 K/W - enables efficient thermal coupling to heatsink, critical for sustained 100+ A switching in micro-hybrid start-stop systems. |
| QGD | 65 nC - balances switching speed and gate drive loss in 20–100 kHz PWM motor control. |
Pinout & Package
Package: TO-220AB (SOT78A), plastic single-ended package with heatsink-mounted metal mounting base (connected internally to drain). Dimensions per IEC/JEDEC SC-46 outline; 3-lead configuration with 1 mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Standard-level MOSFET gate input requiring ≥10 V for full enhancement; VGS(th) > 1 V at 175 °C ensures turn-on reliability in hot environments. |
| 2 (D) | Drain | Main high-side or low-side power path terminal; electrically tied to mounting base for direct heatsinking and low-inductance high-current routing. |
| 3 (S) | Source | Reference node for gate drive and current sensing; isolated from mounting base to support high-side switch configurations. |
| Mounting Base (mb) | Drain connection | Integral metal tab bonded to drain; must be electrically insulated from chassis unless used as common drain return path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for safety-critical powertrain functions. |
| Repetitive avalanche rated | Capable of repeated unclamped inductive switching without degradation - eliminates need for external clamping diodes in solenoid drivers. |
| 175 °C junction rating | Enables placement near heat sources (e.g., engine blocks, inverters) without derating or forced cooling in 12V/24V systems. |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures gate driver compatibility with standard 12 V automotive logic without level-shifting circuitry. |
| Low RDS(on) × QG figure-of-merit | Optimized for high-efficiency, medium-frequency switching (e.g., 20–50 kHz) in EPS and transmission control with minimal gate drive power. |
Applications
| Electric Power Steering (EPS) | Transmission Valve Control |
|---|---|
|
Use Scenario: High-current bidirectional motor phase switching in column-assist or rack-assist EPS modules. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling 3-phase inverter leg; handles peak currents >80 A during assist torque demand. Use Value: 4.1 mΩ RDS(on) minimizes resistive heating during sustained assist, while 175 °C rating ensures stable operation near steering gear housing. |
Use Scenario: PWM-driven proportional solenoid valves regulating hydraulic pressure in automatic transmissions. IC Role / Device Role / Timing Role: High-side switch delivering precise 1–10 A current pulses at 100–500 Hz to linear solenoids. Use Value: Repetitive avalanche capability absorbs inductive flyback without snubber components, reducing BOM count and PCB area. |
| Start-Stop Micro-Hybrid Starter Relay | 48V Mild Hybrid DC-DC Converter Primary Switch |
|
Use Scenario: Solid-state replacement for mechanical starter relays in 12V start-stop systems. IC Role / Device Role / Timing Role: Single-pole high-current switch conducting >100 A cranking current for <500 ms bursts. Use Value: 120 A continuous rating and 631 A peak current capability eliminate contact welding risk and extend service life beyond electromechanical relays. |
Use Scenario: Primary-side synchronous rectifier or high-side switch in 48V–12V bi-directional DC-DC converters. IC Role / Device Role / Timing Role: Fast-switching power FET operating at 100–200 kHz with low QGD/RDS(on) trade-off. Use Value: 65 nC QGD and 0.43 K/W Rth(j-mb) enable efficient thermal management and reduced switching losses at elevated frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 4.7 mΩ RDS(on) @ 10 V, 200 A rating, D²PAK package, no AEC-Q101 certification stated in public datasheet. | Larger footprint and higher thermal resistance (Rth(j-a) ≈ 1.2 K/W); requires PCB copper area for thermal management instead of bolted heatsink. | Select when board space permits and AEC-Q101 is not mandatory; avoid for under-hood applications exceeding 150 °C ambient. |
| IRFB4115PBF | 5.5 mΩ RDS(on), 110 A, TO-220AB, qualified to AEC-Q101 but rated only to 150 °C junction temperature. | Lower thermal endurance limits use in high-ambient zones like near exhaust manifolds or turbochargers. | Acceptable for cabin or cooler-zone automotive modules; not recommended for engine compartment EPS or transmission control units. |
Compared with STL220N4F7AG and IRFB4115PBF, the BUK755R4-100E uniquely combines AEC-Q101 qualification, 175 °C operation, and 4.1 mΩ on-resistance in a bolt-down TO-220AB package - making it the only option among the three qualified for high-temperature, high-current engine bay switching without thermal derating.
Availability
BUK755R4-100E is available at Aetrix Electronics and suitable for electric power steering, transmission control, and start-stop micro-hybrid systems requiring stable component supply across automotive production lifecycles.
Supply support for BUK755R4-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK755R4-100E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive, safety-critical vehicle subsystems where failure is not an option.
FAQ
Is BUK755R4-100E suitable for high-side switching in 48V automotive systems?
Yes - its 100 V VDS rating provides 2× margin over 48 V nominal bus, and its standard-level gate (VGS(th) > 1 V at 175 °C) ensures reliable turn-on with conventional 12 V gate drivers. The drain-connected mounting base simplifies heatsinking in high-side configurations when properly insulated.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the continuous drain current is 112 A at Tmb = 100 °C. This reflects thermal derating due to reduced heat transfer efficiency at elevated mounting base temperatures, while maintaining safe junction temperature below 175 °C.
Does BUK755R4-100E include integrated gate protection?
No - it lacks built-in gate Zener or ESD protection. External gate resistor (typically 10–47 Ω) and TVS diode (e.g., PESD5V0S1BA) between gate and source are required to suppress transient overvoltage and prevent gate oxide damage in automotive environments.
Can this MOSFET replace mechanical relays in starter circuits?
Yes - its 631 A pulsed drain current and 120 A continuous rating exceed typical 12V starter cranking demands (80–100 A). Combined with AEC-Q101 qualification and 175 °C operation, it enables solid-state relay designs with longer lifetime, silent operation, and precise timing control.
BUK755R4-100E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11810 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK755R4-100E,127 FAQ
1.How can I place an order for BUK755R4-100E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK755R4-100E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK755R4-100E,127 reliable?
The price and inventory of BUK755R4-100E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK755R4-100E,127 is usually 5 days.
3.What payment methods are accepted for BUK755R4-100E,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK755R4-100E,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK755R4-100E,127?
BUK755R4-100E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK755R4-100E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK755R4-100E,127?
For technical support, including BUK755R4-100E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK755R4-100E,127 requirements.
6.How does Aetrix verify that BUK755R4-100E,127 is sourced from the original manufacturer or authorized distributors?
All BUK755R4-100E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK755R4-100E,127 meets industry standards.
7.What is the process for return or replacement of BUK755R4-100E,127?
All BUK755R4-100E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK755R4-100E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK755R4-100E,127 part is unused and in its original packaging.
Return procedure for BUK755R4-100E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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