Nexperia USA Inc. BUK7575-100A,127

Overview

BUK7575-100A from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 100 V V_DS, 23 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers 64 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and is AEC-Q101 qualified for automotive critical power switching including motors, lamps, and solenoids in 12 V/24 V systems.

For engineers reviewing the BUK7575-100A datasheet, BUK7575-100A pinout, BUK7575-100A application, or BUK7575-100A equivalent, key selection criteria include its 1.5 K/W R_th(j-mb), unclamped avalanche energy rating of 100 mJ, gate threshold voltage range (2–4 V at 25 °C), and compatibility with standard 10 V gate drive sources in thermally constrained environments.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction losses and high thermal robustness. Its gate-source threshold voltage (V_GS(th)) ranges from 1 V at 175 °C to 4.4 V at –55 °C, enabling reliable turn-on across automotive temperature extremes. The device features an integrated source-drain diode with 0.85 V forward voltage at 25 A and 64 ns reverse recovery time.

Dynamic performance includes 907 pF typical input capacitance (C_iss), 78 pF Crss, and fast switching with 8 ns turn-on delay and 24 ns fall time under defined test conditions. Internal inductances-3.5 nH (mounting base to die) and 7.5 nH (source lead to bond pad)-are specified to support accurate layout modeling for high-di/dt applications.

Key Specifications

Pinout & Package

BUK7575-100A uses the TO-220AB (SOT78A) plastic single-ended package with heatsink mounting and one mounting hole. The metal mounting base is electrically connected to the drain terminal, enabling low-inductance, high-current drain connection and direct thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Compared with STP110N10F7 and IRFZ44NPBF, BUK7575-100A uniquely balances AEC-Q101 compliance, 100 V rating, and moderate R_DS(on) for automotive-grade reliability without over-specifying gate drive capability or sacrificing thermal robustness in compact TO-220AB form factor.

Availability

BUK7575-100A is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drives, and industrial solenoid control systems requiring stable component supply across extended production lifecycles.

Supply support for BUK7575-100A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

BUK7575-100A belongs to NXP's TrenchMOS automotive power portfolio, engineered specifically for robust, high-reliability switching in harsh-temperature vehicle subsystems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

Is BUK7575-100A suitable for high-frequency PWM applications above 50 kHz?

No. With 907 pF input capacitance and ~30 nC total gate charge, BUK7575-100A is optimized for medium-frequency switching (≤20 kHz). Above 50 kHz, switching losses increase significantly due to gate drive power demand and slower transition times-verified by 39 ns rise and 24 ns fall times under standard test conditions.

Can the mounting base be electrically connected to system ground?

No-the mounting base is internally connected to the drain terminal. Connecting it to ground creates a short circuit. It must be mounted on an insulated heatsink or isolated from chassis ground unless the application explicitly requires drain-referenced thermal interface, such as in high-side switch configurations with floating gate drive.

What is the maximum allowable PCB copper area for thermal relief at T_mb = 100 °C?

At T_mb = 100 °C, the datasheet specifies 16.2 A maximum continuous drain current. To maintain this, the PCB copper pour under the mounting base must provide thermal resistance ≤1.5 K/W to ambient. For FR-4 with 2 oz copper, ≥10 cm² of double-sided thermal pad with thermal vias is recommended-per Figure 2 derating curves and R_th(j-a) = 60 K/W baseline.

Does BUK7575-100A include integrated ESD protection on the gate?

Yes. Gate leakage current is specified as ≤100 nA at ±20 V (T_j = 25 °C), and the device passes HBM ESD testing per AEC-Q101 requirements. However, external gate resistors (≥10 Ω) and Zener clamps are still recommended in production designs to prevent damage from board-level ESD events exceeding human-body model limits.