NXP Semiconductors BUK7575-55,127

Overview

BUK7575-55,127 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power transistor in TO220AB package, rated for 55 V drain-source voltage, 19.7 A DC drain current at 25 °C, and 75 mΩ R_DS(ON) at V_GS = 10 V. It integrates ESD protection up to 2 kV and is designed for automotive and general-purpose switching applications including motor control and load switching.

For engineers reviewing the BUK7575-55,127 datasheet, BUK7575-55,127 pinout, BUK7575-55,127 application, or BUK7575-55,127 equivalent, key selection criteria include its standard-level gate drive compatibility (10 V), low on-resistance at junction temperature ≤175 °C, thermal resistance of 2.46 K/W (junction-to-mounting base), and integral body diode with 32 ns reverse recovery time.

Technical Context

The BUK7575-55,127 employs trench-gate MOSFET technology to achieve low conduction losses and robust avalanche capability (30 mJ unclamped inductive energy). Its gate threshold voltage ranges from 2.0 V to 4.0 V at 25 °C, enabling reliable turn-on with standard logic-level drivers while maintaining noise immunity.

It features a monolithic integrated zener-protected gate structure and exhibits dynamic parameters including 365 pF typical input capacitance, 110 pF output capacitance, and 9–14 ns turn-on delay under 10 Ω gate resistance. The device's safe operating area (SOA) supports pulsed drain currents up to 79 A at 25 °C.

Key Specifications

Pinout & Package

Package: TO220AB (SOT78), plastic envelope with metal tab electrically connected to drain; net mass 2 g; UL94 V0 compliant epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP55NF06L and IRFZ44NPBF, the BUK7575-55,127 offers balanced trade-offs: moderate R_DS(ON) with guaranteed 2 kV ESD protection and validated 30 mJ avalanche performance-making it preferred for automotive-grade reliability without sacrificing package compatibility.

Availability

BUK7575-55,127 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and 48 V DC power distribution requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK7575-55,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.

The BUK7575-55,127 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered specifically for robust, high-reliability switching in automotive and industrial environments where ESD resilience and thermal stability are critical.

FAQ

What is the maximum continuous drain current for BUK7575-55,127 at 100 °C mounting base temperature?

The BUK7575-55,127 supports 13.9 A DC drain current at T_mb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal constraints of the TO220AB package and must be verified with actual heatsink design and ambient conditions. The full 19.7 A rating applies only at 25 °C mounting base temperature.

Does BUK7575-55,127 require a gate resistor for safe operation?

Yes - a gate resistor is recommended to control dV/dt and prevent oscillation during switching. The datasheet specifies dynamic timing measurements using R_G = 10 Ω. For BUK7575-55,127, typical gate charge is ~30 nC, so a 10–47 Ω resistor balances switching speed and EMI, especially in inductive load applications.

Is BUK7575-55,127 qualified for automotive applications per AEC-Q101?

While the original Philips specification does not explicitly cite AEC-Q101, the BUK7575-55,127 was designed for automotive use with 175 °C junction rating, 2 kV HBM ESD protection, and validated avalanche performance - all foundational requirements of AEC-Q101. NXP later qualified functionally identical variants (e.g., BUK7K55-55) under AEC-Q101; consult NXP's current automotive product matrix for certified equivalents.

Can BUK7575-55,127 be used in high-frequency PWM applications above 100 kHz?

The BUK7575-55,127 has turn-off delay and fall times of 14–25 ns and 13–20 ns respectively, supporting PWM frequencies up to ~500 kHz in optimized layouts. However, its 365 pF C_iss increases gate drive power demand at high frequency; ensure driver capability exceeds 1 A peak to maintain clean switching edges and minimize switching losses.

What is the thermal resistance from junction to mounting base for BUK7575-55,127?

The BUK7575-55,127 has a maximum thermal resistance of R_{th j-mb} = 2.46 K/W from junction to mounting base, measured with the metal tab directly attached to a heatsink. This value assumes optimal mechanical interface (flatness, thermal paste, torque); actual system R_{th j-a} will depend on heatsink size and airflow.