Nexperia USA Inc. BUK758R3-40E,127
- Part No.:
- BUK758R3-40E,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUK758R3-40E,127.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,720
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK758R3-40E from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78A) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 5.8 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified for automotive power switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK758R3-40E datasheet, BUK758R3-40E pinout, BUK758R3-40E application, or BUK758R3-40E equivalent, key selection criteria include its true standard-level gate (VGS(th) > 1 V at 175 °C), repetitive avalanche rating, 1.56 K/W junction-to-mounting-base thermal resistance, and suitability for 12 V automotive load control with high-current pulse capability (331 A peak).
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and robust switching performance in automotive-grade packaging. Its gate threshold voltage remains functional across -55 °C to 175 °C, and it features integrated source-drain diode with 18.6 ns reverse recovery time and 10.7 nC recovered charge under specified conditions.
The device supports unclamped single-pulse avalanche energy of 44 mJ at ID = 75 A and is characterized for safe operating area (SOA) up to 100 ms pulses. Thermal design is enabled by explicit Rth(j-mb) = 1.56 K/W and normalized power derating curves referenced to mounting base temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - defines maximum blocking voltage in 12 V automotive systems with load-dump transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - package-limited current capacity requiring heatsink mounting for full rating. |
| RDS(on) | 5.8 mΩ typ at VGS = 10 V, ID = 20 A, Tj = 25 °C - enables <1 W conduction loss at 40 A, critical for motor/solenoid drivers. |
| QGD | 7.4 nC typ - determines Miller plateau duration and influences switching speed and gate drive strength requirements. |
| EAS | 44 mJ non-repetitive avalanche energy - supports robustness against inductive turn-off spikes in transmission and start-stop control. |
| Tj max | 175 °C - allows operation in engine bay and transmission control modules without derating at elevated ambient temperatures. |
| Rth(j-mb) | 1.56 K/W - quantifies thermal path efficiency from die to heatsink, enabling accurate junction temperature estimation in mechanical designs. |
Pinout & Package
TO-220AB (SOT78A) plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Three leads: Gate (pin 1), Drain (pin 2 + mounting base), Source (pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Standard-level control input; requires ≥10 V for full enhancement; VGS(th) > 1 V guaranteed at 175 °C. |
| 2 (D) + mb | Drain / Mounting Base | Main high-side power terminal; mounting base is electrically tied to drain and serves as primary thermal interface to heatsink. |
| 3 (S) | Source | Power return path; also forms cathode of integrated body diode used in freewheeling applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive power electronics including engine control, transmission, and start-stop systems. |
| Repetitive avalanche rating | Enables sustained operation under inductive switching stress without degradation, unlike non-rated MOSFETs. |
| 175 °C junction rating | Supports direct placement in high-temperature zones (e.g., near engines or transmissions) without external derating. |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures reliable turn-on with conventional 12 V automotive logic, eliminating need for gate boosters. |
| Low RDS(on) × QG figure-of-merit | Combines 5.8 mΩ on-resistance with 24 nC total gate charge - balances conduction and switching losses in medium-frequency PWM. |
Applications
| Motor Control in Start-Stop Systems | Lamp and Solenoid Load Switching |
|---|---|
|
Use Scenario: High-cycle switching of starter motors and solenoids during micro-hybrid vehicle engine restart events. IC Role / Device Role / Timing Role: Power switch controlling 12 V battery-to-load path; handles 331 A pulsed currents with <10 µs duration. Use Value: Repetitive avalanche capability and 175 °C rating prevent failure during frequent cold cranking and thermal cycling. |
Use Scenario: PWM dimming and on/off control of high-intensity headlamps, fog lamps, and HVAC actuators. IC Role / Device Role / Timing Role: Low-side or high-side load switch; operates at 100–500 Hz with minimal conduction loss due to 5.8 mΩ RDS(on). Use Value: Standard-level gate enables direct MCU GPIO drive; integrated body diode provides freewheeling path for inductive lamp ballasts. |
| Transmission Control Module | 12 V Automotive Power Distribution |
|
Use Scenario: Actuation of hydraulic solenoids and clutch engagement valves in automatic and dual-clutch transmissions. IC Role / Device Role / Timing Role: Precision current-controlled switch delivering regulated 1–5 A solenoid drive with fast turn-off (<30 ns fall time). Use Value: Tight RDS(on) tolerance (5.8–7.4 mΩ) ensures consistent solenoid force; low QGD enables clean edge control. |
Use Scenario: Centralized power switching in junction boxes and body control modules managing multiple 12 V subsystems. IC Role / Device Role / Timing Role: Main distribution switch handling up to 75 A continuous load with thermal monitoring via mounting base temperature. Use Value: Rth(j-mb) = 1.56 K/W enables accurate thermal modeling; TO-220AB form factor supports standardized heatsink integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | Higher VDS (40 V same), but higher RDS(on) (9 mΩ typ), no AEC-Q101 certification, TO-220FP package with insulated tab. | Not qualified for automotive safety-critical functions; limited to industrial or aftermarket use where qualification is not mandated. | Select when cost sensitivity outweighs automotive qualification needs and thermal performance margin permits higher RDS(on). |
| IRF1404ZLPbF | Same VDS (40 V), lower RDS(on) (4.7 mΩ), but only 150 °C Tj rating and no AEC-Q101 compliance. | Suitable for commercial/industrial 12 V systems but unsuitable for under-hood automotive deployment per OEM requirements. | Choose for non-automotive high-current DC loads where junction temperature stays below 150 °C and qualification is unnecessary. |
Compared with STP75NF40 and IRF1404ZLPbF, the BUK758R3-40E uniquely combines AEC-Q101 qualification, 175 °C operation, and verified repetitive avalanche performance-making it the only option for production automotive power switching where reliability under thermal and electrical stress is mandatory.
Availability
BUK758R3-40E is available at Aetrix Electronics and suitable for automotive transmission control, start-stop micro-hybrid systems, and 12 V power distribution modules requiring stable component supply and long-term lifecycle support.
Supply support for BUK758R3-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK758R3-40E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust, thermally resilient switching in 12 V automotive subsystems including engine management, body electronics, and ADAS power stages.
FAQ
Is the BUK758R3-40E pin-compatible with other TO-220AB N-channel MOSFETs?
Yes - it uses standard TO-220AB (SOT78A) pinout: Gate (pin 1), Drain (pin 2 + mounting base), Source (pin 3). Mechanical footprint and lead spacing match JEDEC SC-46 specifications, enabling drop-in replacement in existing PCB layouts designed for this package.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the maximum continuous drain current is 59 A at Tmb = 100 °C. This reflects thermal derating due to reduced heat dissipation capability as mounting base temperature rises, with full 75 A only achievable at Tmb = 25 °C.
Does the BUK758R3-40E require a gate resistor for automotive PWM applications?
Yes - a series gate resistor (typically 5–22 Ω) is recommended to control dV/dt and suppress ringing, especially given its 7.4 nC QGD and 24 nC QG(tot). The datasheet specifies test conditions using RG(ext) = 5 Ω for switching time measurements.
Can the mounting base be electrically isolated from the heatsink?
No - the mounting base is internally connected to the drain terminal. Electrical isolation requires an insulating washer and shoulder washer kit. Direct metal-to-metal mounting creates a common drain/heatsink node, which must be accounted for in system grounding and layout.
BUK758R3-40E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1730 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
BUK758R3-40E,127 FAQ
1.How can I place an order for BUK758R3-40E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK758R3-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK758R3-40E,127 reliable?
The price and inventory of BUK758R3-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK758R3-40E,127 is usually 5 days.
3.What payment methods are accepted for BUK758R3-40E,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK758R3-40E,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK758R3-40E,127?
BUK758R3-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK758R3-40E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK758R3-40E,127?
For technical support, including BUK758R3-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK758R3-40E,127 requirements.
6.How does Aetrix verify that BUK758R3-40E,127 is sourced from the original manufacturer or authorized distributors?
All BUK758R3-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK758R3-40E,127 meets industry standards.
7.What is the process for return or replacement of BUK758R3-40E,127?
All BUK758R3-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK758R3-40E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK758R3-40E,127 part is unused and in its original packaging.
Return procedure for BUK758R3-40E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK758R3-40E,127 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

