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NXP Semiconductors BUK7605-30A,118

Part No.:
BUK7605-30A,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK7605-30A,118.pdf
Description:
MOSFET N-CH 30V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,269

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Product details

Overview

BUK7605-30A from NXP (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT404 (D2PAK) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 5 mΩ RDS(ON) at VGS = 10 V. It serves as a high-current, low-loss switching element in automotive load switching and industrial DC power control circuits.

For engineers reviewing the BUK7605-30A datasheet, BUK7605-30A pinout, BUK7605-30A application, or BUK7605-30A equivalent, key selection factors include its 0.65 K/W junction-to-mounting-base thermal resistance, unclamped inductive avalanche energy rating of 500 mJ, and integrated body diode with 75 A reverse current capability under continuous conduction.

Technical Context

This standard-level MOSFET uses trench-gate technology to achieve ultra-low on-resistance while maintaining robust gate oxide integrity and stable threshold voltage (VGS(TO) = 2–4 V). Its gate drive requires only 10 V for full enhancement, and it supports fast switching with typical turn-on delay of 35 ns and turn-off delay of 155 ns under defined test conditions.

The device integrates a monolithic body diode with VSD = 0.85–1.2 V at IF = 25 A and exhibits controlled reverse recovery (trr = 400 ns, Qrr = 1.0 µC), enabling reliable operation in inductive switching topologies without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage before breakdown; defines safe operating range in 24 V automotive and 28 V industrial systems.
ID (DC)75 A at Tmb = 25 °C - Continuous current handling capacity when mounted on thermally optimized PCB copper area.
RDS(ON)5 mΩ at VGS = 10 V - Low conduction loss yielding <0.3 W dissipation at 25 A, critical for thermal management in high-current switches.
Ptot230 W at Tmb = 25 °C - Total power dissipation limit under ideal heatsinking; derates linearly above 25 °C mounting base temperature.
Rth j-mb0.65 K/W - Junction-to-mounting-base thermal resistance; enables direct thermal path to heatsink via exposed drain pad.
Qrr1.0 µC - Reverse recovery charge of integrated body diode; determines switching loss and EMI in flyback/inductive turn-off.
trr400 ns - Body diode reverse recovery time; impacts minimum dead-time requirements in half-bridge configurations.
WDSS500 mJ - Non-repetitive unclamped inductive avalanche energy; supports robustness against load dump or inductive kick events.

Pinout & Package

SOT404 (D2PAK) surface-mount plastic package with exposed metal mounting base (drain-connected); center pin (pin 2) and mounting base both serve as drain terminals; pin 1 is gate; pin 3 is source.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives 10 V logic-level gate drive; requires static protection during handling due to sensitive oxide layer.
2 (Drain)High-side power terminalElectrically connected to mounting base; primary heat transfer path to heatsink; carries full load current.
3 (Source)Reference node / return pathCommon reference for gate drive and current sensing; low-inductance connection critical for switching stability.
Mounting base (mb)Drain extensionExposed copper pad soldered to PCB thermal plane; provides mechanical anchoring and dominant thermal conduction path.

Key Features

FeatureDesign Value
TrenchMOS™ technologyEnables 5 mΩ RDS(ON) at 30 V rating-reducing conduction losses by >40% vs. planar MOSFETs in same package.
Integrated body diodeRated for 75 A continuous reverse current with 1.0 µC Qrr, eliminating need for external freewheeling diode in DC motor drives.
0.65 K/W Rth j-mbAllows >200 W power dissipation with modest heatsinking-enabling compact designs in space-constrained automotive ECUs.
Unclamped avalanche rating500 mJ energy tolerance supports reliable operation during inductive load disconnection without snubber networks.
SOT404 mechanical designCenter-drain pin + exposed mounting base ensures low-inductance, high-current paths and repeatable thermal performance across production units.

Applications

Automotive Body Control ModuleIndustrial DC Motor Driver

Use Scenario: Switching 12–24 V loads such as headlights, HVAC fans, and window lift motors in vehicle body electronics.

IC Role / Device Role / Timing Role: High-side power switch controlling load current with PWM duty cycle modulation.

Use Value: 5 mΩ RDS(ON) minimizes voltage drop and self-heating during sustained 50–75 A peak loads, extending module lifetime.

Use Scenario: Driving brushed DC motors in factory automation equipment requiring bidirectional control and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, conducting reverse current through integrated body diode during freewheeling.

Use Value: 400 ns trr and 1.0 µC Qrr reduce switching loss and EMI during 20 kHz PWM commutation.

Truck Trailer Lighting ControllerPower Distribution Unit (PDU)

Use Scenario: Managing multiple 24 V trailer lighting circuits subject to load dump transients up to ±60 V.

IC Role / Device Role / Timing Role: Protected load switch with built-in overvoltage clamping via avalanche-rated drain-source junction.

Use Value: 500 mJ unclamped avalanche energy withstands repeated 12 V battery disconnect events without degradation.

Use Scenario: Solid-state replacement for electromechanical relays in server rack PDUs delivering 30 A per channel.

IC Role / Device Role / Timing Role: Main current-handling switch activated by microcontroller GPIO with 10 V gate drive.

Use Value: 0.65 K/W Rth j-mb enables 75 A operation with passive heatsinking-eliminating fan cooling and reducing system noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STB75NF3L-130 V, 75 A, RDS(ON) = 4.5 mΩ @ 10 V; TO-220FP package; higher Rth j-a (60 K/W).Requires larger heatsink for same power; not surface-mount compatible; better suited for prototyping or low-volume assemblies.Select when through-hole assembly or legacy footprint compatibility is required; avoid for high-density SMT designs.
IRF1404ZPBF40 V, 130 A, RDS(ON) = 4.7 mΩ @ 10 V; TO-220AB package; no specified avalanche rating.Higher voltage margin but lacks documented unclamped avalanche capability; unsuitable for automotive load-dump environments.Choose only for 36–40 V systems where avalanche robustness is not critical; verify thermal interface for 130 A rating.

Compared with STB75NF3L-1 and IRF1404ZPBF, the BUK7605-30A uniquely combines SOT404 surface-mount compatibility, 0.65 K/W thermal resistance, and certified 500 mJ avalanche energy-making it optimal for space-constrained, thermally demanding automotive and industrial switching applications.

Availability

BUK7605-30A is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drivers, and power distribution units requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for BUK7605-30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK7605-30A belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered specifically for high-current, low-voltage switching in harsh automotive environments where reliability, thermal efficiency, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for the BUK7605-30A?

The BUK7605-30A is rated for 75 A continuous drain current (ID) at mounting base temperature (Tmb) of 25 °C. This rating decreases with rising temperature-derating to approximately 50 A at Tmb = 100 °C per the normalized current derating curve in the datasheet. The actual usable current depends on PCB copper area, heatsinking, and ambient conditions.

Does the BUK7605-30A require a gate resistor for safe switching?

Yes, a gate resistor is recommended to control dV/dt and prevent oscillation during switching. The datasheet specifies test conditions using RG = 10 Ω for dynamic parameter measurements. For most 24 V automotive applications, a 10–47 Ω series gate resistor balances switching speed and EMI suppression. Lower values increase peak gate current and risk ringing; higher values slow switching and raise conduction time losses.

Can the BUK7605-30A be used in a high-side switch configuration?

Yes, the BUK7605-30A can operate as a high-side switch, but requires a gate drive voltage ≥10 V referenced to the source (i.e., floating gate driver or charge pump). Its standard-level gate threshold (2–4 V) and 20 V maximum ±VGS rating make it compatible with common 12 V or 15 V high-side drivers. Layout must minimize source inductance (Ls = 7.5 nH) to avoid shoot-through during transitions.

What is the significance of the 500 mJ avalanche energy rating for the BUK7605-30A?

The 500 mJ unclamped inductive avalanche energy (WDSS) means the BUK7605-30A can safely absorb single-pulse inductive energy up to that level without failure-critical for automotive load-dump events or relay coil de-energization. This rating is measured under strict conditions (ID = 75 A, VDD ≤ 25 V, VGS = 10 V) and does not imply repetitive avalanche capability. System design must still limit event frequency and magnitude.

Is the BUK7605-30A RoHS compliant and halogen-free?

Yes, the BUK7605-30A manufactured by NXP meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The plastic package conforms to UL94 V0 flammability rating, and the device is supplied in anti-static packaging. Full compliance documentation-including material declarations and test reports-is available through NXP's official product page and authorized distributors.

BUK7605-30A,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK7605-30A,118 FAQ

1.How can I place an order for BUK7605-30A,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7605-30A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7605-30A,118 reliable?

The price and inventory of BUK7605-30A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7605-30A,118 is usually 5 days.

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4.How is shipping managed for BUK7605-30A,118?

BUK7605-30A,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7605-30A,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7605-30A,118?

For technical support, including BUK7605-30A,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7605-30A,118 requirements.

6.How does Aetrix verify that BUK7605-30A,118 is sourced from the original manufacturer or authorized distributors?

All BUK7605-30A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7605-30A,118 meets industry standards.

7.What is the process for return or replacement of BUK7605-30A,118?

All BUK7605-30A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7605-30A,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7605-30A,118 part is unused and in its original packaging.

Return procedure for BUK7605-30A,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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