My Inquiry
My Account
Nexperia USA Inc. BUK7607-55B,118
- Part No.:
- BUK7607-55B,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK7607-55B,118.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,516
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK7607-55B,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive-critical 12 V/24 V power switching. It delivers 75 A continuous drain current at Tmb = 25 °C, 55 V VDS, 5.8 mΩ RDS(on) @ 10 V VGS/25 A/25 °C, and is AEC-Q101 qualified with 175 °C junction rating.
For engineers reviewing the BUK7607-55B,118 datasheet, BUK7607-55B,118 pinout, BUK7607-55B,118 application, or BUK7607-55B,118 equivalent, key selection criteria include thermal performance under mounting-base-limited conduction, avalanche energy handling (351 mJ), gate-drive compatibility with standard 10 V logic, and automotive-grade reliability validation.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and high current capability in a surface-mount D2PAK package. Its gate threshold voltage (2–4 V typ.) enables robust turn-on with standard logic-level drivers, while its 0.74 K/W junction-to-mounting-base thermal resistance supports high-power dissipation in thermally constrained automotive environments.
The integrated source-drain diode exhibits 0.85–1.2 V forward drop at 40 A and 25 °C, with 62 ns reverse recovery time and 60 nC recovered charge-enabling efficient freewheeling in inductive load control. Avalanche ruggedness is specified at 351 mJ under unclamped conditions (ID = 75 A, Vsup ≤ 55 V), supporting reliable operation during transient overvoltage events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum drain-source voltage - defines safe operating ceiling for 12 V/24 V automotive bus systems with margin against transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - package-limited current capacity enabling high-power load switching without external heatsink in moderate airflow. |
| RDS(on) | 5.8 mΩ typ. @ VGS = 10 V, ID = 25 A, Tj = 25 °C - ensures <1.5 W conduction loss at 25 A, reducing thermal stress in sustained switching. |
| EAS | 351 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance during inductive kickback in motor/solenoid drive. |
| Tj max | 175 °C maximum junction temperature - enables operation in under-hood environments where ambient exceeds 125 °C. |
| Rth(j-mb) | 0.74 K/W junction-to-mounting-base thermal resistance - allows direct thermal coupling to PCB copper or heatsink for effective power dissipation. |
| QGD | 17 nC gate-drain charge - determines Miller plateau duration and influences switching speed and gate driver sizing in hard-switched topologies. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal accepting 10 V logic-level drive; threshold range 2–4 V enables reliable turn-on with standard microcontroller outputs. |
| 2 | D (Drain) | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current conduction and thermal transfer. |
| 3 | S (Source) | Power return path and reference for gate drive; internal source inductance of 7.5 nH impacts switching waveform integrity. |
| mb | Mounting Base | Electrically tied to drain; provides mechanical attachment and dominant thermal conduction path to PCB/heatsink (Rth(j-mb) = 0.74 K/W). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| 175 °C junction rating | Enables uninterrupted operation in under-hood locations where ambient temperatures exceed 125 °C and thermal cycling is severe. |
| Low RDS(on) (5.8 mΩ) | Reduces conduction losses below 1.5 W at 25 A, minimizing thermal design burden and improving system efficiency in 12 V/24 V loads. |
| Standard-level gate drive | Operates fully enhanced with 10 V VGS, compatible with common automotive MCU GPIOs and dedicated gate drivers without level-shifting. |
| High avalanche energy (351 mJ) | Withstands single-event inductive energy spikes in motor/solenoid circuits without failure, eliminating need for external snubbers in many cases. |
Applications
| Automotive Engine Control | Commercial Vehicle Lighting |
|---|---|
|
Use Scenario: Controlling fuel injector solenoids and ignition coil primary windings in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: High-side power switch managing 12 V/24 V pulsed loads with precise timing and high peak current (up to 478 A pulsed). Use Value: 175 °C rating and 351 mJ avalanche energy ensure reliability during cold cranking transients and repeated inductive switching cycles. |
Use Scenario: PWM dimming and on/off control of LED headlamps, fog lamps, and brake lights in trucks and buses. IC Role / Device Role / Timing Role: Low-loss power switch delivering up to 75 A continuous current with minimal thermal derating at elevated ambient temperatures. Use Value: 5.8 mΩ RDS(on) reduces power loss and heat generation, extending LED driver lifetime and maintaining optical output stability. |
| Industrial Motor Drives | Off-Road Equipment Actuation |
|
Use Scenario: Driving 24 V DC brush motors in HVAC blowers, power seat actuators, and window lift modules. IC Role / Device Role / Timing Role: Robust N-channel FET used in half-bridge or high-side configuration with fast 52 ns rise time and 41 ns fall time. Use Value: 17 nC QGD and 53 nC QG(tot) enable efficient 20–100 kHz PWM operation with minimal gate drive power consumption. |
Use Scenario: Controlling hydraulic solenoid valves and starter relays in agricultural, construction, and mining machinery. IC Role / Device Role / Timing Role: AEC-Q101-qualified discrete switch handling harsh vibration, wide temperature swings (-40 to +175 °C), and ESD exposure. Use Value: Mounting base connection to drain simplifies PCB layout and improves thermal coupling to chassis, critical in space-constrained off-road enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, 8.5 mΩ RDS(on) @ 10 V - higher voltage rating but 46% higher on-resistance. | Preferred in 42 V mild-hybrid systems; less suitable for thermally tight 12 V automotive layouts due to higher conduction loss. | Select when higher VDS margin is required and thermal budget allows extra 1.1 W loss at 25 A. |
| IRF1404ZPBF | 40 V VDS, 202 A ID, 4.7 mΩ RDS(on) - lower voltage rating, higher current, lower RDS(on), but not AEC-Q101 qualified. | Used in industrial motor drives and UPS systems; unsuitable for automotive safety-critical use without additional qualification. | Choose only for non-automotive applications where AEC-Q101 compliance is not mandated and 40 V bus voltage is guaranteed. |
Compared with STP75NF75 and IRF1404ZPBF, BUK7607-55B,118 uniquely balances 55 V rating, AEC-Q101 qualification, 5.8 mΩ on-resistance, and 175 °C operation-making it the optimal choice for thermally demanding, safety-critical 12 V/24 V automotive power switching where reliability and regulatory compliance are mandatory.
Availability
BUK7607-55B,118 is available at Aetrix Electronics and suitable for automotive engine control units, commercial vehicle lighting systems, and industrial motor drives requiring stable component supply across extended production lifecycles.
Supply support for BUK7607-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components.
The BUK7607-55B belongs to Nexperia's TrenchMOS automotive power MOSFET product line, engineered specifically for robust, thermally efficient switching in 12 V/24 V automotive subsystems such as body control, powertrain, and ADAS actuation.
FAQ
Is BUK7607-55B,118 suitable for high-frequency PWM motor control?
Yes. With 52 ns rise time, 41 ns fall time, and 17 nC QGD, it supports efficient switching up to 100 kHz in brushed DC motor drives. Its 5.8 mΩ RDS(on) minimizes conduction loss, while 0.74 K/W Rth(j-mb) ensures thermal stability under sustained PWM duty cycles at 25–75 A.
What is the maximum gate-source voltage rating, and can it be driven directly by a 3.3 V MCU?
The absolute maximum VGS is ±20 V, but full enhancement requires ≥10 V VGS. At 3.3 V, the device remains in weak conduction (VGS(th) min = 2 V), resulting in >100 mΩ RDS(on) and excessive heating. A gate driver or level shifter is required for reliable operation.
How does the mounting base connection affect PCB layout and thermal design?
The mounting base is electrically tied to the drain and serves as the primary thermal path. It must be soldered to a large copper pour or heatsink with ≥4 thermal vias (0.3 mm diameter, 1 mm pitch) to realize the 0.74 K/W Rth(j-mb). Isolation from other nets is mandatory since mb = drain potential.
Does BUK7607-55B,118 include integrated protection features like overtemperature shutdown?
No. It is a discrete power MOSFET without built-in thermal shutdown, current limiting, or short-circuit protection. System-level protection must be implemented externally using current-sense resistors, comparators, and gate driver fault inputs-consistent with automotive functional safety requirements (ISO 26262 ASIL-B/C).
BUK7607-55B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 203W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK7607-55B,118 FAQ
1.How can I place an order for BUK7607-55B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7607-55B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7607-55B,118 reliable?
The price and inventory of BUK7607-55B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7607-55B,118 is usually 5 days.
3.What payment methods are accepted for BUK7607-55B,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7607-55B,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK7607-55B,118?
BUK7607-55B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7607-55B,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7607-55B,118?
For technical support, including BUK7607-55B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7607-55B,118 requirements.
6.How does Aetrix verify that BUK7607-55B,118 is sourced from the original manufacturer or authorized distributors?
All BUK7607-55B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7607-55B,118 meets industry standards.
7.What is the process for return or replacement of BUK7607-55B,118?
All BUK7607-55B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7607-55B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7607-55B,118 part is unused and in its original packaging.
Return procedure for BUK7607-55B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK7607-55B,118 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
