NXP Semiconductors BUK7608-55,118

Overview

BUK7608-55,118 from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2PAK) package, rated for 55 V drain-source voltage, 75 A DC drain current at 25 °C, and 8 mΩ R_DS(ON) at V_GS = 10 V. It integrates ESD protection up to 2 kV and is designed for high-current automotive and industrial switching applications including motor control and power distribution.

For engineers reviewing the BUK7608-55,118 datasheet, BUK7608-55,118 pinout, BUK7608-55,118 application, or BUK7608-55,118 equivalent, key selection criteria include its low on-resistance, avalanche energy rating of 500 mJ, thermal resistance junction-to-mounting base of 0.8 K/W, and robust reverse diode characteristics with 75 A continuous reverse current capability.

Technical Context

This standard-level MOSFET uses trench gate technology to achieve low conduction losses while maintaining stable threshold voltage (2–4 V) across -55 °C to 175 °C operating range. Its integral body diode supports freewheeling in inductive loads, and the device is characterized for unclamped inductive switching with defined avalanche energy limits.

The SOT404 package features a large mounting base (pin 2 and mb) for efficient heat transfer, and the internal layout minimizes source inductance (7.5 nH) and drain inductance (2.5 nH), supporting fast switching with measured t_d(off) ≤ 140 ns and t_f ≤ 70 ns under resistive load conditions.

Key Specifications

Pinout & Package

SOT404 (D2PAK) package with exposed mounting base (pin 2 and mb) thermally and electrically connected to drain; plastic envelope suitable for surface mounting with recommended solder footprint per Fig.19.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF55-08 and IRF1404ZPBF, the BUK7608-55,118 offers superior thermal performance via its SOT404 mounting base, built-in 2 kV ESD protection, and precise 55 V rating-making it optimal for space-constrained, high-reliability automotive and industrial switching where voltage margin and board-level robustness are critical.

Availability

BUK7608-55,118 is available at Aetrix Electronics and suitable for automotive motor control, industrial power distribution, and DC-DC converter primary switching requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for BUK7608-55,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The BUK7608-55,118 belongs to Nexperia's TrenchMOS™ standard-level power MOSFET product line, engineered for high-current, high-reliability switching in harsh environments where low on-resistance, avalanche ruggedness, and integrated ESD protection are essential.

FAQ

What is the maximum continuous drain current rating for BUK7608-55,118 at 100 °C mounting base temperature?

The BUK7608-55,118 is rated for 65 A DC drain current at T_mb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT404 package and ensures safe operation within the 175 °C maximum junction temperature limit. The BUK7608-55,118 maintains stable R_DS(ON) performance across this range due to its trench process and low R_{th j-mb} of 0.8 K/W.

Does BUK7608-55,118 have an integrated body diode, and what are its key reverse conduction parameters?

Yes, the BUK7608-55,118 includes an integral reverse diode with 75 A continuous reverse drain current (I_DR) and 240 A pulsed rating (I_DRM). At I_F = 25 A and V_GS = 0 V, V_SD is 0.85–1.2 V; reverse recovery time (t_rr) is 65 ns typical with Q_rr = 0.18 µC. These values make the BUK7608-55,118 suitable for freewheeling and synchronous rectification in H-bridge topologies.

What is the gate threshold voltage range for BUK7608-55,118, and how does it vary with temperature?

The BUK7608-55,118 has a gate threshold voltage (V_GS(TO)) of 2.0–4.0 V at T_j = 25 °C, narrowing to 1.0–4.4 V across -55 °C to 175 °C. This wide operational window ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while maintaining noise immunity. The BUK7608-55,118 remains fully enhanced above 4.5 V across its full temperature range.

Is BUK7608-55,118 suitable for avalanche-rated switching applications, and what is its unclamped inductive energy rating?

Yes, the BUK7608-55,118 is explicitly characterized for unclamped inductive switching with a non-repetitive avalanche energy rating (W_DSS) of 500 mJ under defined test conditions (I_D = 75 A, V_DD ≤ 25 V, V_GS = 10 V). This rating enables robust operation in relay replacement, motor drive, and other inductive load switching without external snubbers-confirming the BUK7608-55,118's suitability for ruggedized designs.

What package type does BUK7608-55,118 use, and how is thermal management implemented?

The BUK7608-55,118 uses the SOT404 (D2PAK) package with an exposed mounting base (mb) electrically and thermally connected to the drain. Thermal resistance junction-to-mounting base is 0.8 K/W max, enabling direct conduction to a PCB copper pour or heatsink. The BUK7608-55,118 requires adherence to the recommended solder footprint (Fig.19) and minimum 10 mm² thermal pad area for optimal performance.