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Nexperia USA Inc. BUK7610-100B,118
- Part No.:
- BUK7610-100B,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK7610-100B,118.pdf
- Description:
- MOSFET N-CH 100V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,184
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Product details
Overview
BUK7610-100B from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 100 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 300 W total power dissipation. It delivers 8.6 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, with AEC-Q101 qualification for automotive critical loads including solenoids, lamps, and 12–42 V motor control.
For engineers reviewing the BUK7610-100B datasheet, BUK7610-100B pinout, BUK7610-100B application, or BUK7610-100B equivalent, key selection criteria include thermal resistance (Rth(j-mb) = 0.5 K/W), avalanche ruggedness (629 mJ unclamped), gate charge (QG(tot) = 80 nC), and 175 °C junction temperature rating.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance and high current capability in a surface-mount D2PAK package. Its standard-level gate drive compatibility (VGS(th) = 2–4.4 V, typ. 3 V) enables direct interface with 5 V and 3.3 V logic without level-shifting, while its 175 °C maximum junction temperature supports operation in thermally demanding engine-bay environments.
The device integrates a robust body diode with 69 ns reverse recovery time and 212 nC recovered charge, enabling reliable freewheeling in inductive switching applications. Its SOA is defined up to 100 V and 75 A under DC conditions, capped by package thermal limits-not silicon limits-making mounting base temperature (Tmb) the dominant thermal design variable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum drain-source voltage - defines absolute upper limit for blocking capability in 42 V automotive systems. |
| ID (continuous) | 75 A at Tmb = 25 °C - limited by package thermal capacity, not die capability; derates to zero at Tmb = 125 °C. |
| RDS(on) | 8.6 mΩ typ. at VGS = 10 V, ID = 25 A, Tj = 25 °C - determines conduction loss (Pcond ≈ I² × R) in high-current switching paths. |
| EAS | 629 mJ non-repetitive avalanche energy - enables single-event inductive energy absorption without failure during load dump or flyback transients. |
| QG(tot) | 80 nC total gate charge - sets minimum gate driver current requirement (e.g., 8 mA avg. for 10 µs turn-on) and switching loss contribution. |
| Rth(j-mb) | 0.5 K/W junction-to-mounting-base thermal resistance - defines thermal path efficiency when mounted on heatsink; enables 300 W dissipation at ΔT = 150 K. |
| VGS(th) | 2–4.4 V threshold range - ensures reliable turn-on with 5 V microcontroller GPIO while avoiding spurious conduction near 0 V. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; requires ≥10 V for full enhancement; gate leakage <100 nA ensures low standby power. |
| 2 | D (Drain) | Main high-side current path; internally bonded to mounting base - must be electrically isolated from PCB ground unless drain-referenced topology. |
| 3 | S (Source) | Reference node for gate drive and current sensing; internal source inductance (LS = 7.5 nH) affects switching waveform fidelity. |
| mb | Mounting Base | Thermal and electrical connection to drain; provides low-inductance, high-current return path and dominates thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, braking, and lighting modules. |
| 175 °C max junction temperature | Enables uninterrupted operation in under-hood environments where ambient exceeds 125 °C. |
| Low RDS(on) (8.6 mΩ typ.) | Reduces conduction losses by >30% vs. comparable 100 V MOSFETs, improving system efficiency and thermal margin. |
| Robust body diode (trr = 69 ns) | Supports fast freewheeling in PWM-driven inductive loads without external diode, minimizing board space and EMI. |
| Standard-level gate drive | Operates fully enhanced with 5 V logic outputs - eliminates need for gate driver ICs in many MCU-based designs. |
Applications
| Automotive Lamp Control | Engine Bay Solenoid Driver |
|---|---|
|
Use Scenario: Switching 12 V halogen and LED headlamps in modern vehicle lighting modules. IC Role / Device Role / Timing Role: High-side load switch controlling lamp current up to 40 A with PWM dimming. Use Value: Low RDS(on) minimizes heat generation in confined lamp housing; AEC-Q101 ensures reliability over 15-year vehicle lifetime. |
Use Scenario: Driving fuel injector or transmission solenoid valves in engine management systems. IC Role / Device Role / Timing Role: Fast-switching power stage delivering precise current pulses with <120 ns turn-off delay. Use Value: 629 mJ avalanche rating absorbs inductive kickback without snubber; 175 °C rating withstands under-hood thermal cycling. |
| 42 V Mild Hybrid Starter Generator | Industrial 24 V Motor Control |
|
Use Scenario: Controlling starter-generator bidirectional power flow in 42 V mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier and high-current switching element in dual-phase buck-boost converter. Use Value: 100 V VDS provides 2× system voltage margin; 300 W Ptot supports peak cranking currents >100 A. |
Use Scenario: H-bridge or half-bridge motor driver for industrial actuators and pumps operating from 24 V DC bus. IC Role / Device Role / Timing Role: Low-side or high-side switch handling continuous 30–50 A motor current with PWM frequencies up to 20 kHz. Use Value: QG(tot) = 80 nC enables efficient gate driving with discrete MOSFET drivers; D2PAK package simplifies heatsinking on metal-core PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N10F7 | 100 V, 120 A, RDS(on) = 5.5 mΩ @ 10 V, but only 150 °C Tj(max); no AEC-Q101 certification. | Higher current capability suits larger motors, but unsuitable for automotive safety-critical use without requalification. | Select only for industrial 24 V systems requiring higher ID and lower RDS(on), where automotive qualification is unnecessary. |
| IRF1404ZPBF | 40 V VDS, 195 A, RDS(on) = 3.7 mΩ @ 10 V; TO-220 package; no automotive qualification. | Limited to 12 V/24 V systems only; lacks thermal margin for sustained 42 V operation or high-temperature environments. | Use only in cost-sensitive 12 V consumer or industrial applications where 100 V blocking and 175 °C operation are not required. |
Compared with STL120N10F7 and IRF1404ZPBF, BUK7610-100B trades peak current and ultra-low RDS(on) for guaranteed automotive qualification, superior thermal robustness (175 °C), and optimized gate charge for logic-level drive - making it the preferred choice for safety-compliant, thermally constrained 12–42 V automotive power switching.
Availability
BUK7610-100B is available at Aetrix Electronics and suitable for automotive lamp control, engine bay solenoid actuation, and 42 V mild hybrid power conversion requiring stable component supply across extended product lifecycles.
Supply support for BUK7610-100B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with deep expertise in automotive-grade components and advanced packaging.
BUK7610-100B belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust, high-current switching in harsh-temperature automotive subsystems such as body electronics and powertrain interfaces.
FAQ
Is BUK7610-100B suitable for high-frequency PWM motor control?
Yes - with 120 ns turn-off delay, 36 ns fall time, and 80 nC total gate charge, it supports PWM frequencies up to 100 kHz in well-designed gate-drive circuits. Its 677–812 pF Coss and 168–230 pF Crss ensure predictable switching behavior, though layout parasitics must be minimized to maintain timing integrity above 20 kHz.
Can BUK7610-100B be used in high-side configuration with 12 V supply?
Yes - its standard-level gate threshold (2–4.4 V) allows direct drive from 12 V logic or microcontroller outputs. For true high-side switching, a bootstrap or charge-pump gate driver is needed to maintain VGS ≥ 10 V when source rises to 12 V; the device itself supports this topology per its VGS = ±20 V rating.
What is the significance of the mounting base (mb) being connected to drain?
The mounting base is electrically tied to the drain terminal and serves as the primary thermal conduction path. This requires electrical isolation from heatsinks or chassis unless the circuit topology intentionally references the drain potential - e.g., in high-side switches or synchronous rectifiers - and mandates careful PCB layout to avoid shorting drain to ground.
Does BUK7610-100B require external protection against load dump transients?
No external TVS is required for basic load dump immunity - its 100 V VDS rating and 629 mJ unclamped avalanche energy allow it to safely absorb ISO 7637-2 Pulse 5a (12 V systems) and Pulse 5b (24 V systems) transients without failure, provided gate drive remains active and thermal limits are observed during event duration.
BUK7610-100B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6773 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK7610-100B,118 FAQ
1.How can I place an order for BUK7610-100B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7610-100B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7610-100B,118 reliable?
The price and inventory of BUK7610-100B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7610-100B,118 is usually 5 days.
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Once your BUK7610-100B,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7610-100B,118?
For technical support, including BUK7610-100B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7610-100B,118 requirements.
6.How does Aetrix verify that BUK7610-100B,118 is sourced from the original manufacturer or authorized distributors?
All BUK7610-100B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7610-100B,118 meets industry standards.
7.What is the process for return or replacement of BUK7610-100B,118?
All BUK7610-100B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7610-100B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7610-100B,118 part is unused and in its original packaging.
Return procedure for BUK7610-100B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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