Nexperia USA Inc. BUK7611-55B,118

Overview

BUK7611-55B,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V drain-source voltage, 75 A continuous drain current at 25 °C mounting base temperature, and 9.9 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It is AEC-Q101 qualified for automotive critical loads including motors, solenoids, and 12/24 V power switching.

For engineers reviewing the BUK7611-55B,118 datasheet, BUK7611-55B,118 pinout, BUK7611-55B,118 application, or BUK7611-55B,118 equivalent, this device supports thermally demanding environments up to 175 °C junction temperature, features low conduction loss, and is optimized for standard gate drive compatibility without requiring logic-level or enhanced gate drivers.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and high avalanche ruggedness (173 mJ unclamped), enabling robust operation under inductive load switching. Its gate threshold voltage (2–4 V at 25 °C) ensures reliable turn-on with 10 V gate drive while maintaining noise immunity.

The device integrates a monolithic source-drain diode with 0.85–1.2 V forward voltage at 25 A and 60 ns reverse recovery time, supporting freewheeling in motor and solenoid control. Thermal resistance from junction to mounting base is 0.95 K/W, facilitating direct heatsink attachment via the exposed drain pad.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic surface-mount with exposed drain mounting base (pin 2), 3-terminal configuration. Pin 2 is internally connected to the drain and serves as thermal and electrical interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Compared with STL220N5LF8AG and IRF1404ZLPBF, the BUK7611-55B,118 uniquely balances 55 V rating, AEC-Q101 compliance, D2PAK thermal efficiency, and standard 10 V gate drive-making it optimal for cost-sensitive, space-constrained automotive 12/24 V power switching where qualification and reliability are mandatory.

Availability

BUK7611-55B,118 is available at Aetrix Electronics and suitable for automotive motor control, 12 V/24 V load switching, and engine bay solenoid drivers requiring stable component supply across production lifecycles.

Supply support for BUK7611-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK7611-55B belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust, thermally efficient switching in harsh-environment automotive subsystems such as body control modules and power distribution units.

FAQ

Is BUK7611-55B,118 suitable for high-frequency PWM applications?

Yes - with 11 ns turn-on delay, 45 ns rise time, 41 ns turn-off delay, and 27 ns fall time, it supports PWM frequencies up to 100 kHz in motor control and lighting applications. Gate charge values (Q_G(tot) = 37 nC, Q_GD = 12 nC) indicate moderate drive strength requirements; a 1–2 A peak gate driver is recommended for optimal switching efficiency.

What is the significance of the 'mb' terminal in the SOT404 package?

The mounting base (mb) is pin 2 - an exposed copper pad electrically connected to the drain and serving as the primary thermal path. It must be soldered directly to a copper pour or heatsink to achieve the specified 0.95 K/W R_th(j-mb). Failure to thermally connect mb results in severe junction temperature rise and premature failure under load.

Does BUK7611-55B,118 include integrated gate protection?

No - it lacks built-in gate Zener clamping or series resistance. External gate protection (e.g., 12 V Zener diode from gate to source, 10 Ω series resistor) is required in noisy automotive environments to prevent V_GS overstress beyond ±20 V absolute maximum rating and ensure long-term reliability.

How does the R_DS(on) change with temperature, and what impact does that have on thermal design?

R_DS(on) increases with junction temperature - from 9.9 mΩ at 25 °C to 22 mΩ at 175 °C. This positive temperature coefficient improves current sharing in parallel configurations but requires derating: at 100 °C T_mb, continuous current drops to 59 A. Thermal design must account for this rise using the normalized R_DS(on) curve (Figure 12) and actual board-level thermal resistance.