Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK7613-60E,118

Part No.:
BUK7613-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK7613-60E,118.pdf
Description:
MOSFET N-CH 60V 58A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,798

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK7613-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in SOT404 (D2PAK) package, rated for 60 V VDS, 58 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 9.44 mΩ typical RDS(on) at VGS = 10 V and ID = 15 A, and is engineered for automotive motor, lamp, and solenoid control in thermally demanding environments.

For engineers reviewing the BUK7613-60E datasheet, BUK7613-60E pinout, BUK7613-60E application, or BUK7613-60E equivalent, key selection criteria include its standard-level gate drive compatibility (VGS(th) > 1 V at 175 °C), repetitive avalanche rating, 1.56 K/W junction-to-mounting-base thermal resistance, and suitability for start-stop micro-hybrid systems requiring robust 12 V power switching.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with QGD = 6.9 nC and tr = 9.2 ns. Its true standard-level gate enables direct drive from 5 V or 3.3 V microcontrollers without level-shifting, while maintaining VGS(th) ≥ 1 V even at 175 °C junction temperature.

The device integrates a monolithic source-drain diode with 0.84 V typical forward voltage at 15 A and 21.3 ns reverse recovery time. Its mounting base (pin 4) is electrically connected to the drain, enabling low-inductance PCB layout with direct thermal coupling to heatsinks via the exposed metal tab.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage; supports 12 V automotive systems with margin against load-dump transients.
RDS(on) 9.44 mΩ typ @ VGS = 10 V, ID = 15 A, Tj = 25 °C - Enables low conduction loss in high-current switching paths.
ID cont. 58 A @ Tmb = 25 °C - High current capability enabled by D2PAK package and low Rth(j-mb) = 1.56 K/W.
QGD 6.9 nC - Low gate-drain charge reduces Miller-induced switching delay and improves EMI performance.
Tj max 175 °C - Extended temperature rating allows operation in engine bay and transmission control modules.
EAS 37 mJ - Non-repetitive avalanche energy rating supports robustness against inductive kickback in solenoid/motor drives.
VGS(th) ≥1 V @ Tj = 175 °C - Ensures reliable turn-on under worst-case thermal conditions with standard logic-level drive.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (pin 4) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 G Gate input terminal; accepts standard-level logic drive (VGS(th) > 1 V up to 175 °C).
2 D Drain terminal; internally bonded to mounting base for low-inductance, high-current output path.
3 S Source terminal; reference node for gate drive and current sensing; forms return path for load current.
mb Mounting Base Electrically connected to drain; provides mechanical attachment and primary thermal interface to heatsink.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control, transmission, and body electronics per stress test requirements.
Repetitive avalanche rating Rated for repeated unclamped inductive switching events, enhancing reliability in motor/solenoid drive circuits.
175 °C junction temperature rating Enables placement in high-temperature zones (e.g., near engines or transmissions) without derating penalties.
True standard-level gate VGS(th) remains >1 V at 175 °C, ensuring compatible drive from common MCU GPIOs without external level shifters.
Low Rth(j-mb) 1.56 K/W thermal resistance enables efficient heat transfer to PCB copper or external heatsink, reducing thermal design complexity.

Applications

Engine Bay Motor Control Start-Stop Micro-Hybrid System

Use Scenario: Driving radiator cooling fans, HVAC blowers, and fuel pumps in under-hood locations subject to ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling DC motor current with PWM duty cycle modulation.

Use Value: 175 °C Tj rating and 37 mJ avalanche energy ensure uninterrupted operation during thermal transients and inductive flyback events.

Use Scenario: Managing starter motor engagement and battery regeneration during vehicle stop/start cycles in 12 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Main power switch for starter solenoid and regenerative braking load dump protection.

Use Value: 58 A continuous current and 60 V VDS support high-torque cranking pulses while surviving ISO 7637-2 load-dump surges.

Transmission Control Module LED Headlamp Driver

Use Scenario: Controlling hydraulic solenoids and actuators in automatic and dual-clutch transmissions where vibration and thermal cycling are severe.

IC Role / Device Role / Timing Role: Precision current-regulated switch delivering timed actuation pulses to electro-hydraulic valves.

Use Value: Repetitive avalanche capability and AEC-Q101 qualification guarantee long-term reliability across 15+ year vehicle lifetimes.

Use Scenario: Switching high-brightness LED arrays in adaptive front-lighting systems (AFS) requiring precise dimming and fault tolerance.

IC Role / Device Role / Timing Role: Low-side PWM switch enabling dynamic current control and short-circuit protection via fast RDS(on) sensing.

Use Value: 9.44 mΩ RDS(on) minimizes power loss and self-heating, while 21.3 ns trr prevents cross-conduction in multi-channel drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, 2.2 mΩ RDS(on), H2PAK-2 package; requires higher gate drive current and has different thermal interface geometry. Targeted at higher-power inverters; not drop-in due to larger footprint and different mounting base configuration. Select when >100 A continuous current and lower RDS(on) are required; verify PCB layout and gate driver capability.
IRF1404ZLPbF 40 V, 184 A, 3.8 mΩ RDS(on), TO-220AB; lacks AEC-Q101 qualification and 175 °C rating. Intended for industrial/commercial power supplies; unsuitable for automotive under-hood use without additional qualification. Only consider for non-automotive 12 V systems where AEC-Q101 and extended temperature are not mandated.

Compared with STL220N6F7 and IRF1404ZLPbF, BUK7613-60E uniquely balances AEC-Q101 compliance, standard-level gate drive, and D2PAK thermal performance-making it optimal for space-constrained, thermally aggressive automotive switches where qualification and ease of drive are mandatory.

Availability

BUK7613-60E is available at Aetrix Electronics and suitable for automotive motor control, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply and long-term lifecycle assurance.

Supply support for BUK7613-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and process technologies.

BUK7613-60E belongs to Nexperia's TrenchMOS automotive power MOSFET product line, designed specifically for robust, thermally resilient switching in 12 V automotive subsystems including engine management, body electronics, and ADAS power stages.

FAQ

Is BUK7613-60E suitable for high-frequency PWM switching above 100 kHz?

Yes-its 6.9 nC QGD, 9.2 ns tr, and 9.8 ns tf support efficient operation up to 200 kHz in hard-switched topologies. However, thermal management must account for increased switching losses; PCB copper area and heatsinking should be optimized per Figure 1 and Figure 5 in the datasheet.

Does the mounting base require electrical isolation from the heatsink?

No-the mounting base is electrically connected to the drain (pin 2). If the heatsink is grounded or at a different potential, electrical isolation using insulating thermal pads or mica washers is mandatory to prevent short circuits and ensure safe operation.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum VGS is ±20 V per Table 5. Transient overshoot beyond this limit-even briefly-risks permanent gate oxide damage. A clamping circuit (e.g., 15 V Zener diode from gate to source) is recommended in noisy automotive environments.

Can BUK7613-60E replace older BUK7613-55B in existing designs?

Yes-both share identical SOT404 package, pinout, and gate characteristics, but BUK7613-60E offers improved 60 V VDS rating (vs. 55 V) and tighter RDS(on) distribution. No layout or drive changes are needed; the upgrade enhances surge margin in 12 V automotive systems.

BUK7613-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
22.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1730 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK7613-60E,118 FAQ

1.How can I place an order for BUK7613-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7613-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7613-60E,118 reliable?

The price and inventory of BUK7613-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7613-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK7613-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7613-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7613-60E,118?

BUK7613-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7613-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7613-60E,118?

For technical support, including BUK7613-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7613-60E,118 requirements.

6.How does Aetrix verify that BUK7613-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK7613-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7613-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK7613-60E,118?

All BUK7613-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7613-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7613-60E,118 part is unused and in its original packaging.

Return procedure for BUK7613-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK7613-60E,118 Tags

  • BUK7613-60E,118
  • BUK7613-60E,118 PDF
  • BUK7613-60E,118 Datasheet
  • BUK7613-60E,118 Specifications
  • BUK7613-60E,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK7613-60E,118
  • Buy BUK7613-60E,118
  • BUK7613-60E,118 Price
  • BUK7613-60E,118 Distributor
  • BUK7613-60E,118 Supplier
  • BUK7613-60E,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER