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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK7614-55A,118

Name: BUK7614-55A,118
Brand: NXP Semiconductors
SKU: BUK7614-55A,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK7614-55A,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK7614-55A,118.pdf

Description:: MOSFET N-CH 55V 73A D2PAK

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Product details

Overview

BUK7614-55A from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power transistor in TO220AB and SOT404 packages, rated for 55 V V_DS, 73 A DC drain current at T_mb = 25 °C, and 149 W total power dissipation. It delivers 14 mΩ R_DS(ON) at V_GS = 10 V and is designed for automotive and industrial switching applications requiring robust unclamped inductive avalanche capability (125 mJ).

For engineers reviewing the BUK7614-55A datasheet, BUK7614-55A pinout, BUK7614-55A application, or BUK7614-55A equivalent, key selection considerations include its standard-level gate drive compatibility (V_GS(th) = 2–4 V), thermal resistance junction-to-mounting-base of 0.9 K/W, and validated reverse diode performance with 73 A continuous reverse current and 54 ns t_rr.

Technical Context

The BUK7614-55A employs trench-gate MOSFET technology to achieve low on-state resistance and high current handling. Its gate threshold voltage ranges from 1 V at T_j = 175 °C to 4.4 V at T_j = −55 °C, enabling stable turn-on across automotive temperature extremes.

It supports unclamped inductive switching with a specified non-repetitive avalanche energy rating of 125 mJ under defined conditions (I_D = 50 A, V_DD ≤ 25 V). Dynamic parameters include 1848 pF typical C_iss, 421 pF C_oss, and 231 pF C_rss, with turn-off delay and fall times of 57 ns and 51 ns respectively at V_DD = 30 V and R_G = 10 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 48 V automotive and industrial DC systems.
I_D (DC)	73 A at T_mb = 25 °C - Continuous current capability with heatsink mounting; derates to 52 A at T_mb = 100 °C.
R_DS(ON)	14 mΩ max at V_GS = 10 V, T_j = 25 °C - Low conduction loss enabling <1.1 W I²R loss at 25 A, critical for thermal management.
P_tot	149 W - Total power dissipation limit at T_mb = 25 °C; enables high-power switching without forced cooling in optimized layouts.
T_j max	175 °C - Maximum junction temperature; supports operation in under-hood automotive environments and sealed industrial enclosures.
Q_rr	0.12 µC - Reverse recovery charge of integrated body diode; minimizes switching loss and voltage overshoot in hard-switched inductive loads.
t_rr	54 ns - Fast reverse recovery time; reduces diode conduction overlap and improves efficiency in synchronous rectification or H-bridge topologies.

Pinout & Package

BUK7614-55A is available in two thermally optimized plastic packages: TO220AB (SOT78) and SOT404 (D2-PAK variant), both featuring pin 2 (drain) electrically connected to the mounting base/tab for low-inductance, high-current thermal and electrical paths.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥5 V for full enhancement; gate threshold spans 2–4 V at 25 °C, ensuring reliable turn-on with standard logic-level drivers.
2	Drain	Main high-side current path; internally bonded to metal tab/base-must be electrically isolated from heatsink unless system ground reference permits.
3	Source	Power return path and gate reference node; internal source inductance is 7.5 nH, limiting high-di/dt ringing in fast-switching designs.
Tab/MB	Drain (thermal & electrical)	Mounting base serves as extended drain terminal-enables direct thermal coupling to heatsink while carrying full load current; critical for achieving 0.9 K/W R_{th j-mb}.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 14 mΩ R_DS(ON) at 55 V rating-reduces conduction losses by >30% versus planar MOSFETs in same package, improving system efficiency and thermal margin.
Unclamped inductive avalanche rating	125 mJ (non-repetitive)-validates robustness in motor drive, solenoid, and relay switching where inductive kickback exceeds supply rail.
Integrated body diode	Rated for 73 A continuous reverse current and 54 ns t_rr-supports freewheeling in half-bridge configurations without external diode, reducing BOM count and layout area.
Low gate charge profile	Typical Q_G = 18.5 nC at V_DS = 44 V-enables fast, low-loss switching with moderate gate driver strength (e.g., TC4427), minimizing driver power consumption.
Thermal resistance R_{th j-mb}	0.9 K/W maximum-allows direct mounting to heatsink with minimal thermal interface resistance, supporting sustained 73 A operation when ambient and heatsink design are controlled.

Applications

Automotive Body Control Module	Industrial DC Motor Drive
Use Scenario: High-side switching of 12 V/24 V lighting, HVAC actuators, and window lift motors in BCMs. IC Role / Device Role / Timing Role: Power switch controlling load current; operates in on/off mode with PWM dimming support up to 2 kHz. Use Value: 14 mΩ R_DS(ON) limits voltage drop to <1 V at 70 A, preventing thermal runaway during stall conditions; avalanche rating handles inductive spikes from brushed motor commutation.	Use Scenario: Half-bridge leg in 48 V industrial BLDC or brushed DC motor controllers. IC Role / Device Role / Timing Role: Low-side or high-side switching element; synchronized with complementary FET using dead-time control. Use Value: 54 ns t_rr and 0.12 µC Q_rr minimize shoot-through risk and reduce diode conduction loss during switching transitions, improving overall inverter efficiency by ~1.2% at 10 kHz.
Commercial Power Supply OR-ing	EV Charging Station DC Contactor
Use Scenario: OR-ing diode replacement in redundant 48 V telecom or server PSUs. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; controlled via gate driver monitoring forward voltage drop. Use Value: 14 mΩ R_DS(ON) yields <0.7 V drop at 50 A-cutting conduction loss by >75% versus 0.8 V Schottky, directly improving PSU efficiency and reducing heatsink size.	Use Scenario: Main contactor switch in Level 2 AC-to-DC EV charging units (e.g., 7–22 kW). IC Role / Device Role / Timing Role: Isolation and pre-charge switching device; handles inrush current and fault interruption in DC link. Use Value: 125 mJ avalanche energy rating ensures survivability during DC arc events and capacitor pre-charge transients; TO220AB package supports bolt-down mechanical reliability and high-current busbar integration.

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: High-side switching of 12 V/24 V lighting, HVAC actuators, and window lift motors in BCMs.

IC Role / Device Role / Timing Role: Power switch controlling load current; operates in on/off mode with PWM dimming support up to 2 kHz.

Use Value: 14 mΩ R_DS(ON) limits voltage drop to <1 V at 70 A, preventing thermal runaway during stall conditions; avalanche rating handles inductive spikes from brushed motor commutation.

Use Scenario: Half-bridge leg in 48 V industrial BLDC or brushed DC motor controllers.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; synchronized with complementary FET using dead-time control.

Use Value: 54 ns t_rr and 0.12 µC Q_rr minimize shoot-through risk and reduce diode conduction loss during switching transitions, improving overall inverter efficiency by ~1.2% at 10 kHz.

Commercial Power Supply OR-ing

EV Charging Station DC Contactor

Use Scenario: OR-ing diode replacement in redundant 48 V telecom or server PSUs.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; controlled via gate driver monitoring forward voltage drop.

Use Value: 14 mΩ R_DS(ON) yields <0.7 V drop at 50 A-cutting conduction loss by >75% versus 0.8 V Schottky, directly improving PSU efficiency and reducing heatsink size.

Use Scenario: Main contactor switch in Level 2 AC-to-DC EV charging units (e.g., 7–22 kW).

IC Role / Device Role / Timing Role: Isolation and pre-charge switching device; handles inrush current and fault interruption in DC link.

Use Value: 125 mJ avalanche energy rating ensures survivability during DC arc events and capacitor pre-charge transients; TO220AB package supports bolt-down mechanical reliability and high-current busbar integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55 V, 75 A, 14 mΩ R_DS(ON), TO220; higher gate charge (120 nC vs. 18.5 nC) and slower switching (t_f = 100 ns).	Less suitable for high-frequency PWM (>10 kHz); better for lower-speed, high-current linear regulation.	Choose STP75NF55 only if gate drive strength is high and switching frequency is below 5 kHz-BUK7614-55A offers superior dynamic performance and thermal efficiency.
IRFZ44NPBF	55 V, 49 A, 28 mΩ R_DS(ON), TO220; no specified avalanche rating; higher R_DS(ON) increases conduction loss by ~100% at 25 A.	Limited to non-automotive, non-inductive applications due to missing avalanche validation and lower current rating.	Select IRFZ44NPBF only for cost-sensitive, low-power (<30 A), non-automotive designs where avalanche robustness is not required-BUK7614-55A provides verified ruggedness and higher current headroom.

Compared with STP75NF55 and IRFZ44NPBF, the BUK7614-55A delivers significantly lower gate charge and faster switching, enabling higher efficiency in PWM-driven loads, while its validated 125 mJ avalanche rating and 73 A rating make it uniquely suited for automotive and industrial inductive switching where reliability under transient stress is mandatory.

Availability

BUK7614-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drives, commercial OR-ing power supplies, and EV charging station contactor circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BUK7614-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in power management and high-reliability analog devices.

The BUK7614-55A belongs to NXP's TrenchMOS™ standard-level power MOSFET product line, engineered specifically for robust, high-current switching in harsh automotive and industrial environments where avalanche tolerance, thermal stability, and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for the BUK7614-55A?

The BUK7614-55A is rated for 73 A DC drain current at mounting base temperature (T_mb) = 25 °C. This rating decreases to 52 A at T_mb = 100 °C per the derating curve in the datasheet. The value assumes proper heatsinking and adherence to the specified thermal resistance junction-to-mounting-base (R_{th j-mb} ≤ 0.9 K/W). Always verify actual board-level thermal performance before final design validation.

Does the BUK7614-55A have an avalanche energy rating, and what is its value?

Yes, the BUK7614-55A has a specified non-repetitive unclamped inductive avalanche energy rating of 125 mJ under test conditions of I_D = 50 A, V_DD ≤ 25 V, V_GS = 5 V, and R_GS = 50 Ω at T_mb = 25 °C. This rating is validated per JEDEC standards and confirms the device's ability to safely absorb inductive switching energy-critical for automotive solenoid, relay, and motor drive applications where voltage spikes exceed the supply rail.

What are the package options for the BUK7614-55A, and how do they differ thermally?

The BUK7614-55A is offered in TO220AB (SOT78) and SOT404 (surface-mount D2-PAK) packages. Both feature pin 2 (drain) connected to the mounting base/tab. Thermally, TO220AB achieves R_{th j-a} = 60 K/W in free air and R_{th j-mb} = 0.9 K/W; SOT404 achieves R_{th j-a} = 50 K/W on minimum FR4 footprint and same R_{th j-mb}. SOT404 offers superior PCB thermal spreading but requires careful solder pad design per Philips SMD guidelines.

What is the gate threshold voltage range for the BUK7614-55A, and why does it matter?

The BUK7614-55A has a gate threshold voltage (V_GS(th)) ranging from 2 V (min) to 4 V (max) at T_j = 25 °C, and shifts to 1 V (min) at T_j = 175 °C. This wide, temperature-dependent range ensures reliable turn-on across automotive operating temperatures while maintaining noise immunity-preventing unintended turn-on from gate leakage or EMI. Designers must ensure gate drive exceeds 5 V for full enhancement and low R_DS(ON).

Can the BUK7614-55A be used as a direct replacement for the BUK7514-55A?

Yes-the BUK7614-55A and BUK7514-55A share identical electrical specifications (V_DS, I_D, R_DS(ON), P_tot, avalanche rating) and pinout, differing only in minor manufacturing process refinements. Both are qualified for automotive use, have identical TO220AB/SOT404 packaging, and are fully interchangeable in existing designs without layout or firmware changes. The BUK7614-55A supersedes BUK7514-55A in NXP's active portfolio.

BUK7614-55A,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2464 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK7614-55A,118 FAQ

1.How can I place an order for BUK7614-55A,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7614-55A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7614-55A,118 reliable?

The price and inventory of BUK7614-55A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7614-55A,118 is usually 5 days.

3.What payment methods are accepted for BUK7614-55A,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7614-55A,118 transactions.

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4.How is shipping managed for BUK7614-55A,118?

BUK7614-55A,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7614-55A,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7614-55A,118?

For technical support, including BUK7614-55A,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7614-55A,118 requirements.

6.How does Aetrix verify that BUK7614-55A,118 is sourced from the original manufacturer or authorized distributors?

All BUK7614-55A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7614-55A,118 meets industry standards.

7.What is the process for return or replacement of BUK7614-55A,118?

All BUK7614-55A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7614-55A,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7614-55A,118 part is unused and in its original packaging.

Return procedure for BUK7614-55A,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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