NXP Semiconductors BUK7615-100A,118

Overview

BUK7615-100A,118 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2PAK) package, rated for 100 V V_DS, 75 A DC drain current at T_mb = 25 °C, and 15 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-current, low-loss switching element in automotive load switching and industrial DC power control circuits.

For engineers reviewing the BUK7615-100A,118 datasheet, BUK7615-100A,118 pinout, BUK7615-100A,118 application, or BUK7615-100A,118 equivalent, key selection criteria include its 0.65 K/W junction-to-mounting-base thermal resistance, unclamped inductive avalanche energy rating of 120 mJ, and validated operation up to 175 °C junction temperature in surface-mount automotive environments.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Q_G typ. 100 nC at V_DS = 80 V). Its internal structure integrates a robust body diode with 80 ns reverse recovery time and 0.35 µC Q_rr, enabling synchronous rectification and inductive load handling without external freewheeling diodes.

The device operates in standard-level gate drive configuration (V_GS(th) = 2–4 V), requiring ≥10 V for full enhancement. Its safe operating area (SOA) supports single-pulse ID_M = 240 A at V_DS ≤ 25 V, and it is qualified per AEC-Q101 for automotive under-hood applications where thermal cycling and mechanical robustness are critical.

Key Specifications

Pinout & Package

SOT404 (D2PAK) plastic surface-mount package with isolated mounting base (pin 2/mb connected to drain); 3-pin configuration optimized for high-current PCB thermal management via exposed drain tab soldered to large copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRF1405, the BUK7615-100A,118 uniquely combines 100 V rating, AEC-Q101 qualification, and SOT404 surface-mount thermal performance-making it the only option among the three for space-constrained, thermally demanding automotive 12/24/48 V load switching.

Availability

BUK7615-100A,118 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, trailer ABS systems, and off-grid solar charge controllers requiring stable component supply across extended production lifecycles.

Supply support for BUK7615-100A,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.

The BUK7615-100A,118 belongs to NXP's TrenchMOS™ standard-level power MOSFET product line, engineered specifically for high-reliability, high-current DC switching in automotive under-hood and industrial control environments.

FAQ

What is the maximum continuous drain current for BUK7615-100A,118 at 100 °C mounting base temperature?

The BUK7615-100A,118 supports 53 A DC drain current at T_mb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT404 package and must be verified using the normalized current derating curve (Fig.2) for precise layout-dependent thermal design. The BUK7615-100A,118 maintains 15 mΩ R_DS(on) only at 25 °C junction temperature; at 175 °C, R_DS(on) rises to 40.5 mΩ.

Does BUK7615-100A,118 have an integrated body diode, and what are its key ratings?

Yes, the BUK7615-100A,118 includes a monolithic body diode rated for 75 A continuous reverse drain current (IDR) and 240 A pulsed (IDRM). Its forward voltage is 0.85–1.2 V at 25 A and 1.1 V at 75 A, with 80 ns reverse recovery time (t_rr) and 0.35 µC reverse recovery charge (Q_rr). These values are measured with V_GS = 0 V and are critical for designing snubberless inductive load circuits. The BUK7615-100A,118 body diode enables bidirectional current flow in H-bridge and regenerative braking applications.

What is the gate threshold voltage range for BUK7615-100A,118, and how does it vary with temperature?

The BUK7615-100A,118 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at T_j = 25 °C, narrowing to 1.0–4.4 V across the full junction temperature range (-55 to +175 °C). This wide variation means gate drive must supply ≥10 V to ensure full enhancement across all operating conditions. The BUK7615-100A,118 exhibits negative temperature coefficient for V_GS(th), decreasing as temperature rises-requiring careful gate driver selection to avoid unintended turn-on near thermal limits.

Is BUK7615-100A,118 suitable for automotive applications, and what qualifications does it hold?

Yes, the BUK7615-100A,118 is AEC-Q101 qualified for automotive use, having passed stress tests including temperature cycling, humidity, and mechanical shock per JESD47. Its 175 °C max junction temperature, 100 V V_DS, and 120 mJ avalanche energy rating make it suitable for under-hood body control modules, ABS solenoid drivers, and starter relays. The BUK7615-100A,118 is not intended for life support systems per Philips/NXP disclaimer.

What is the thermal resistance from junction to mounting base for BUK7615-100A,118, and why is it important?

The BUK7615-100A,118 has a maximum thermal resistance R_{th j-mb} of 0.65 K/W from junction to mounting base, measured with proper soldering to a large copper area. This low value enables efficient heat transfer from the die to the PCB heatsink, allowing 230 W total power dissipation at T_mb = 25 °C. Accurate thermal modeling requires this parameter-not R_{th j-a}-since the mounting base is the primary thermal path. The BUK7615-100A,118 must be soldered to a minimum 10.3 × 9.7 mm² copper pad per Fig.20 to achieve rated performance.