NXP Semiconductors BUK7616-55A,118

Overview

BUK7616-55A from Philips Semiconductors is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 55 V drain-source voltage, 65.7 A DC drain current at T_mb = 25 °C, and 138 W total power dissipation. It delivers 13 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 25 A (T_j = 25 °C), and is Q101-compliant for automotive power switching applications including 12 V/24 V motor, lamp, and solenoid control.

For engineers reviewing the BUK7616-55A datasheet, BUK7616-55A pinout, BUK7616-55A application, or BUK7616-55A equivalent, this page provides verified thermal resistance (R_th(j-mb) = 1.1 K/W), avalanche energy rating (120 mJ), gate threshold voltage range (2–4 V), source-drain diode forward voltage (0.85–1.2 V at I_S = 25 A), and dynamic parameters including C_iss (1580–2245 pF) and turn-off delay (57 ns).

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance and high current capability in a surface-mount D2-PAK package with integral mounting base connected to drain. Its standard-level gate drive compatibility (V_GS(th) = 2–4 V) enables direct interface with 5 V microcontrollers without level-shifting circuitry.

The internal structure features low-inductance layout: L_d = 2.5 nH (from upper edge of drain mounting base to die center) and L_s = 7.5 nH (source lead to bond pad), supporting fast switching in inductive load circuits. Avalanche ruggedness is specified at 120 mJ under unclamped inductive conditions (I_D = 49 A, V_DS ≤ 55 V, V_GS = 10 V).

Key Specifications

Pinout & Package

SOT404 (D2-PAK) plastic surface-mount package with three leads and integral metal mounting base electrically connected to drain. Mounting base enables direct thermal coupling to PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP62NS04Z and IRF1404ZPBF, the BUK7616-55A uniquely balances 55 V rating, D2-PAK surface-mount compatibility, Q101 qualification, and 13 mΩ on-resistance - making it the only drop-in solution for space-constrained, thermally demanding 12/24 V automotive power nodes requiring production-grade reliability.

Availability

BUK7616-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, truck trailer lighting controllers, and off-highway equipment power distribution requiring stable component supply across extended product lifecycles.

Supply support for BUK7616-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Philips Semiconductors (now NXP Semiconductors) is a global semiconductor supplier with leadership in automotive, industrial, and power management solutions, delivering high-reliability components since the 1950s.

The BUK7616-55A belongs to the TrenchMOS™ standard-level FET product line, engineered specifically for automotive and industrial power switching where robustness, thermal efficiency, and gate-drive simplicity are critical in 12 V and 24 V systems.

FAQ

What is the maximum continuous drain current for BUK7616-55A at 100 °C mounting base temperature?

The BUK7616-55A supports 46.5 A DC drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 (Limiting values). This derating reflects thermal constraints of the SOT404 package and must be applied in convection-cooled or sealed enclosure designs where mounting base temperature exceeds 25 °C. The BUK7616-55A datasheet Figure 2 provides normalized current curves for precise thermal design.

Is BUK7616-55A suitable for use in high-frequency PWM motor control?

Yes, the BUK7616-55A supports PWM motor control up to ~20 kHz due to its fast switching characteristics: t_d(off) = 57 ns, t_f = 41 ns, and C_iss = 1580–2245 pF. However, gate drive strength must scale with Q_G (~50 nC) to maintain clean edges; a 1–2 A peak gate driver is recommended. The BUK7616-55A's low L_s (7.5 nH) also helps minimize ringing in half-bridge configurations.

Does BUK7616-55A have an integrated body diode, and what are its key parameters?

Yes, the BUK7616-55A includes an integrated source-drain diode rated for 65.7 A DC reverse current (I_DR) at T_mb = 25 °C. Key parameters include V_SD = 0.85–1.2 V at I_S = 25 A and t_rr = 48 ns under specified conditions (I_S = 20 A, dI_S/dt = −100 A/µs). These values make the BUK7616-55A suitable for freewheeling in brushed DC motor drives without external diodes.

What is the thermal resistance from junction to mounting base for BUK7616-55A, and how does it impact heatsinking?

The BUK7616-55A has R_th(j-mb) = 1.1 K/W, measured from silicon junction to the metal mounting base (pin 2 and base surface). This low value enables efficient heat transfer directly to a PCB copper pour or bolted heatsink. For example, with a 50 K/W heatsink and 1.1 K/W junction-to-base, total thermal resistance is ~51.1 K/W - allowing ~2.7 W dissipation at 138 °C ΔT. The BUK7616-55A's SOT404 footprint (Fig 18) must be followed for optimal thermal performance.

Is BUK7616-55A qualified to AEC-Q101, and what does that mean for automotive use?

Yes, the BUK7616-55A is explicitly stated as Q101 compliant in its official product specification. This means it has passed all AEC-Q101 stress tests - including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, and unclamped inductive switching - validating its suitability for automotive power electronics. The BUK7616-55A is approved for under-hood and body-control applications where long-term reliability under thermal and electrical stress is mandatory.