My Inquiry
My Account
Nexperia USA Inc. BUK761R6-40E,118
- Part No.:
- BUK761R6-40E,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK761R6-40E,118.pdf
- Description:
- MOSFET N-CH 40V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,649
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK761R6-40E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404A (D2PAK) package, rated for 40 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 1.3 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK761R6-40E datasheet, BUK761R6-40E pinout, BUK761R6-40E application, or BUK761R6-40E equivalent, this device is selected for ultra-high-current 12 V automotive loads where avalanche ruggedness, true standard-level gate drive compatibility, and mounting-base thermal performance are critical design requirements.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance while maintaining robust unclamped avalanche capability (1008 mJ) and stable threshold voltage (>1 V at 175 °C). Its gate threshold is specified with tight control across temperature, enabling reliable turn-on under hot-start conditions in start-stop micro-hybrid systems.
The device features integrated source-drain diode with 56 ns reverse recovery time and 94 nC recovered charge, supporting synchronous rectification and inductive load commutation. Thermal resistance from junction to mounting base is 0.43 K/W, confirming direct heatsink-mounting capability for high-power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - supports 12 V automotive battery systems with margin for load dump transients |
| ID (continuous) | 120 A at Tmb = 25 °C - enables high-current motor/solenoid control without external parallel devices |
| RDS(on) | 1.3 mΩ typ @ VGS = 10 V, Tj = 25 °C - minimizes conduction loss in high-duty-cycle switching |
| EAS | 1008 mJ single-pulse avalanche energy - ensures survivability during inductive turn-off events in transmission control |
| Tj max | 175 °C - allows operation in engine bay or powertrain modules without derating below ambient extremes |
| Rth(j-mb) | 0.43 K/W - enables efficient thermal coupling to heatsink, critical for sustained 349 W power dissipation |
| VGS(th) | >1 V @ Tj = 175 °C - guarantees gate turn-on with standard 5 V or 12 V logic drivers under worst-case thermal stress |
Pinout & Package
Package: SOT404A (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Standard-level MOSFET control input; requires ≥10 V for full enhancement; compatible with 5 V/12 V microcontroller outputs |
| 2 (D) | Drain | Main high-side or low-side power switch node; internally bonded to mounting base for low-inductance, high-current routing |
| 3 (S) | Source | Power return path and reference for gate drive; separate terminal from mounting base to enable source-referenced sensing |
| mb | Mounting Base | Electrically tied to drain; provides mechanical attachment and primary thermal interface to heatsink; not a signal pin |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock per AEC standard |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching events - eliminates need for external snubbers in solenoid/motor drives |
| 175 °C junction rating | Enables placement in high-temperature zones (e.g., near engines or inverters) without thermal derating penalties |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures predictable turn-on with common 5 V/12 V logic without level-shifting circuitry |
| Low QGD/QG ratio | 48.2 nC gate-drain charge / 145 nC total gate charge = 0.33 - improves switching controllability and reduces Miller-induced shoot-through risk |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge driver for 12 V EPS motor with rapid direction reversal and stall protection. IC Role / Device Role / Timing Role: Low-side and high-side switching element handling peak currents up to 1355 A pulsed, with fast 83 ns fall time and 56 ns diode recovery. Use Value: Enables compact, thermally efficient EPS module design by eliminating parallel MOSFETs and reducing heatsink mass through 0.43 K/W Rth(j-mb). |
Use Scenario: Battery disconnect and starter motor engagement/disengagement in 12 V start-stop systems. IC Role / Device Role / Timing Role: Main power switch controlling cranking current delivery; withstands repeated 1008 mJ avalanche energy during load dump events. Use Value: Eliminates need for external TVS or clamping circuits due to intrinsic avalanche ruggedness, reducing BOM count and PCB area. |
| Transmission Solenoid Driver | 12 V Automotive Lamp Control |
|
Use Scenario: PWM-controlled proportional pressure solenoid in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Precision current-regulated switch operating at 1–10 kHz with <1.57 mΩ RDS(on) to minimize self-heating at 25 A DC. Use Value: Maintains stable solenoid force over full temperature range (−40 °C to 175 °C) due to flat RDS(on) vs. Tj curve and >1 V VGS(th) at max Tj. |
Use Scenario: High-brightness LED headlamp or daytime running light (DRL) dimming and fault protection. IC Role / Device Role / Timing Role: Low-side current sink with integrated body diode for freewheeling; supports 120 A surge during cold filament inrush. Use Value: Delivers fail-safe open-load detection via precise leakage current specs (≤500 µA at 175 °C) and enables single-device thermal management for multi-string arrays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 0.75 mΩ @ 10 V but requires 4.5 V logic-level gate drive; no AEC-Q101 certification stated | Better conduction efficiency but lacks automotive qualification and high-temperature VGS(th) validation | Select only for non-automotive industrial use where gate drive voltage ≥4.5 V is guaranteed and qualification is not required |
| IRFB4115PBF | 150 V, 110 A, RDS(on) = 3.8 mΩ @ 10 V; TO-220 package; AEC-Q101 not claimed; higher RDS(on) and lower current rating | Higher voltage margin but significantly higher conduction loss and inferior thermal performance (Rth(j-c) ≈ 1.0 K/W) | Acceptable only if 150 V rating is mandatory and board space allows TO-220 footprint; not recommended for high-efficiency 12 V systems |
Compared with STL220N4F7AG and IRFB4115PBF, BUK761R6-40E uniquely balances AEC-Q101 compliance, 175 °C operation, standard-level gate compatibility, and 0.43 K/W thermal resistance-making it the only choice for space-constrained, thermally aggressive automotive power stages requiring zero qualification risk.
Availability
BUK761R6-40E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid driver applications requiring stable component supply and long-term automotive lifecycle support.
Supply support for BUK761R6-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
This device belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for 12 V battery rail switching in safety-critical vehicle subsystems where thermal resilience, avalanche robustness, and AEC-Q101 compliance are non-negotiable.
FAQ
Is BUK761R6-40E suitable for high-frequency PWM applications above 100 kHz?
No-its 145 nC total gate charge and 121 ns turn-off delay time make it optimized for medium-frequency switching (1–50 kHz) in automotive power control. For >100 kHz operation, devices with lower QG and faster td(off) such as Nexperia's NextPower series are recommended.
Can the mounting base be used as a current-carrying conductor in PCB layout?
Yes-the mounting base is electrically connected to the drain and rated for full 120 A continuous current. It must be soldered to a large copper pour or heatsink with adequate thermal relief; trace width and solder mask opening must accommodate 120 A without exceeding 20 °C rise.
What is the maximum allowable gate-source voltage during transient conditions?
The absolute maximum VGS is ±20 V per datasheet limiting values. Exceeding this-even briefly-risks irreversible gate oxide damage. A gate driver with active clamping or Zener protection at 18 V is strongly advised in noisy automotive environments.
Does BUK761R6-40E include integrated ESD protection on the gate?
No-this MOSFET has no built-in gate ESD protection diodes. External gate protection (e.g., 12 V Zener + series resistor) is required to survive ISO 10605 30 kV contact discharge events typical in automotive assembly and service environments.
BUK761R6-40E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK761R6-40E,118 FAQ
1.How can I place an order for BUK761R6-40E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK761R6-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK761R6-40E,118 reliable?
The price and inventory of BUK761R6-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK761R6-40E,118 is usually 5 days.
3.What payment methods are accepted for BUK761R6-40E,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK761R6-40E,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK761R6-40E,118?
BUK761R6-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK761R6-40E,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK761R6-40E,118?
For technical support, including BUK761R6-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK761R6-40E,118 requirements.
6.How does Aetrix verify that BUK761R6-40E,118 is sourced from the original manufacturer or authorized distributors?
All BUK761R6-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK761R6-40E,118 meets industry standards.
7.What is the process for return or replacement of BUK761R6-40E,118?
All BUK761R6-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK761R6-40E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK761R6-40E,118 part is unused and in its original packaging.
Return procedure for BUK761R6-40E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK761R6-40E,118 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
