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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK761R7-40E,118

Name: BUK761R7-40E,118
Brand: Nexperia USA Inc.
SKU: BUK761R7-40E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK761R7-40E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK761R7-40E,118.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

BUK761R7-40E from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in SOT404A (D2PAK) package, rated for 40 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 1.32 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching including electric power steering and start-stop micro-hybrid systems.

For engineers reviewing the BUK761R7-40E datasheet, BUK761R7-40E pinout, BUK761R7-40E application, or BUK761R7-40E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, true standard-level gate drive (V_GS(th) > 1 V at 175 °C), and thermal resistance of 0.46 K/W from junction to mounting base.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 34.7 nC and t_r = 49 ns under standard test conditions. Its gate threshold voltage remains functional up to 175 °C, enabling stable operation in thermally demanding engine-bay environments.

The device integrates an intrinsic source-drain diode with V_SD = 0.79 V at I_S = 25 A and T_j = 25 °C, and supports unclamped single-pulse avalanche energy up to 801 mJ - critical for inductive load switching in transmission control and solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines use in 12 V automotive systems with transient overvoltage margin.
R_DS(on)	1.32 mΩ (typ) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D (cont)	120 A at T_mb = 25 °C - Limited by package thermal capacity; derates to zero at T_mb ≈ 200 °C per Fig. 2.
P_tot	324 W at T_mb = 25 °C - High power handling enabled by low R_th(j-mb) = 0.46 K/W and metal-mounting base.
Q_GD	34.7 nC - Low gate-drain charge improves hard-switching efficiency and reduces Miller-induced turn-off delay.
E_AS	801 mJ (non-repetitive) - Supports robust unclamped inductive switching without external snubbers in solenoid and motor control.
T_j max	175 °C - Extended temperature rating allows placement near heat sources in powertrain modules.

Pinout & Package

SOT404A (D2PAK) plastic surface-mount package with isolated mounting base connected internally to the drain terminal. The package features a single cropped lead, optimized for high-current PCB mounting and thermal transfer via the exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level input requiring ≥10 V for full enhancement; V_GS(th) > 1 V even at 175 °C ensures reliable turn-on in hot environments.
2 (D)	Drain	Main high-side or low-side power path; electrically tied to mounting base for direct thermal coupling to heatsink or copper plane.
3 (S)	Source	Reference node for gate drive and current sensing; internal source bond wires limit parasitic inductance (L_S = 7.5 nH).
mb (Mounting Base)	Drain (electrically connected)	Primary thermal interface - contributes >90% of total heat dissipation; requires soldered or clamped mechanical contact for rated P_tot.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability across temperature cycling, humidity, and mechanical shock - required for ECU and ADAS power stages.
Repetitive avalanche rated	Rated for repeated inductive energy discharge without degradation - enables robust operation in motor commutation and solenoid actuation.
175 °C junction rating	Enables direct integration into high-temperature zones (e.g., near engines or inverters) without derating penalties common in 150 °C parts.
True standard-level gate	V_GS(th) > 1 V at 175 °C ensures predictable turn-on with conventional 12 V logic or MCU GPIO - eliminates need for level-shifting or gate boosters.
Low R_th(j-mb)	0.46 K/W enables >300 W power dissipation with ≤100 K rise above mounting base - reduces heatsink mass and cost in space-constrained modules.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Control

Use Scenario: High-current H-bridge driver for 12 V brushless EPS motors, switching up to 100 A peak during assist events.

IC Role / Device Role / Timing Role: Low-side and high-side power switch in three-phase inverter stage; handles PWM frequencies up to 20 kHz with minimal switching loss.

Use Value: 1.32 mΩ R_DS(on) limits conduction loss to <1.3 W at 100 A, while 801 mJ avalanche rating absorbs back-EMF spikes during sudden motor deceleration.

Use Scenario: Load switch controlling battery-to-starter and battery-to-DC/DC converter paths during engine cranking and restart cycles.

IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) power path selector with fast turn-on (<100 ns) and controlled slew rate to prevent bus collapse.

Use Value: 120 A continuous rating supports 1.5 kW peak loads; 175 °C rating ensures stability during repeated cranking pulses where ambient exceeds 105 °C.

Transmission Solenoid Driver

12 V Automotive Lighting Control

Use Scenario: PWM-controlled current source for electro-hydraulic pressure control solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: Low-side switch regulating 2–5 A solenoid current at 100–500 Hz; must withstand 60 V transients and survive reverse battery events.

Use Value: 40 V V_DS provides 2× margin over 12 V system + load dump; integrated body diode enables freewheeling without external components.

Use Scenario: High-side switch for LED headlamp matrix modules, managing individual segment currents up to 8 A with thermal foldback.

IC Role / Device Role / Timing Role: Protected load switch with built-in current sense and thermal shutdown; interfaces directly with CAN/LIN controller GPIOs.

Use Value: Standard-level gate allows direct 5 V or 3.3 V MCU drive; 175 °C rating permits placement inside sealed lamp housings with no forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 0.95 mΩ @ 10 V, T_j = 25 °C; DFN5x6 package; no AEC-Q101 certification.	Higher current rating but lacks automotive qualification and has higher thermal resistance (R_th(j-mb) not specified; R_th(j-a) = 1.6 K/W).	Select only for non-automotive industrial or consumer applications where qualification and thermal performance are secondary to peak current.
IRFB4115PBF	150 V, 110 A, R_DS(on) = 4.5 mΩ @ 10 V; TO-220AB package; AEC-Q101 qualified but higher R_DS(on) and larger footprint.	Over-specified voltage rating increases gate charge (Q_G = 230 nC) and switching loss; unsuitable for compact EPS modules.	Prefer only when 150 V rating is mandatory (e.g., 48 V hybrid systems) and board space allows TO-220 mounting.

Compared with STL220N4F7AG and IRFB4115PBF, BUK761R7-40E uniquely balances AEC-Q101 compliance, ultra-low R_DS(on), and D2PAK thermal performance - making it optimal for space- and temperature-constrained 12 V automotive power stages where qualification and efficiency are co-critical.

Availability

BUK761R7-40E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid driver applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK761R7-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

BUK761R7-40E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive 12 V vehicle subsystems where AEC-Q101 compliance, avalanche ruggedness, and low R_DS(on) are essential.

FAQ

Is BUK761R7-40E suitable for high-frequency PWM applications above 50 kHz?

No - while its t_r = 49 ns and t_f = 52 ns support switching up to ~20 kHz efficiently, Q_G(tot) = 118 nC and Q_GD = 34.7 nC increase gate drive power loss at higher frequencies. For >50 kHz operation, consider Nexperia's NextPower series with lower Q_GD and optimized gate structure.

Can BUK761R7-40E be used in a high-side configuration with 12 V gate drive?

Yes - its standard-level gate (V_GS(th) > 1 V at 175 °C) and 20 V maximum V_GS rating allow direct 12 V gate drive in high-side configurations. However, a dedicated high-side driver IC is recommended to ensure fast, clean turn-on and avoid shoot-through in half-bridge topologies.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Per Fig. 2 in the datasheet, continuous 120 A operation is only possible when the mounting base temperature (T_mb) is ≤25 °C. At T_mb = 100 °C, the rated continuous current drops to 70 A; operation above T_mb = 200 °C is prohibited due to thermal runaway risk.

Does BUK761R7-40E include integrated ESD protection on the gate?

No - the datasheet does not specify human-body model (HBM) or charged-device model (CDM) ESD ratings. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp) is required during assembly and in-system operation to prevent gate oxide damage from static discharge or voltage transients.

BUK761R7-40E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 324W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK761R7-40E,118 FAQ

1.How can I place an order for BUK761R7-40E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK761R7-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK761R7-40E,118 reliable?

The price and inventory of BUK761R7-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK761R7-40E,118 is usually 5 days.

3.What payment methods are accepted for BUK761R7-40E,118?

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4.How is shipping managed for BUK761R7-40E,118?

BUK761R7-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK761R7-40E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK761R7-40E,118?

For technical support, including BUK761R7-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK761R7-40E,118 requirements.

6.How does Aetrix verify that BUK761R7-40E,118 is sourced from the original manufacturer or authorized distributors?

All BUK761R7-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK761R7-40E,118 meets industry standards.

7.What is the process for return or replacement of BUK761R7-40E,118?

All BUK761R7-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK761R7-40E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK761R7-40E,118 part is unused and in its original packaging.

Return procedure for BUK761R7-40E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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