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NXP Semiconductors BUK761R8-30C,118

Part No.:
BUK761R8-30C,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK761R8-30C,118.pdf
Description:
MOSFET N-CH 30V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:9,102

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Product details

Overview

BUK761R8-30C from Nexperia is an N-channel enhancement-mode TrenchMOS power FET in D2PAK (SOT404) package, rated for 30 V VDS, 1.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and 100 A continuous drain current at Tmb = 25 °C - designed for high-current automotive load switching including motors, lamps, and solenoids.

For engineers reviewing the BUK761R8-30C datasheet, BUK761R8-30C pinout, BUK761R8-30C application, or BUK761R8-30C equivalent, key selection criteria include its Q101 compliance, 175 °C junction rating, avalanche energy rating of 1.7 J, low-inductance internal layout (LD = 2.5 nH, LS = 7.5 nH), and standard-level gate drive compatibility with 10 V logic.

Technical Context

This device uses Nexperia's Ultra High-Performance (UHP) automotive TrenchMOS technology to achieve ultra-low on-resistance and robust avalanche ruggedness. Its gate threshold voltage ranges from 1 V at Tj = 175 °C to 4.4 V at Tj = −55 °C, ensuring reliable turn-on across automotive temperature extremes.

The integrated source-drain diode exhibits VSD = 0.85 V at IS = 25 A and Tj = 25 °C, with trr = 73 ns and Qr = 48 nC under defined conditions. Thermal resistance from junction to mounting base is 0.45 K/W, enabling high-power dissipation when mounted on a thermally optimized heatsink.

Key Specifications

Parameter Value and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 12 V automotive systems with transient margin
RDS(on)1.5 mΩ (typ) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.5 W conduction loss at 100 A
ID (cont)100 A at Tmb = 25 °C - Limited by D2PAK package thermal capability
EDS(AL)S1.7 J - Non-repetitive avalanche energy supports inductive load turn-off without external snubbers
Tj max175 °C - Qualified per AEC-Q101 for under-hood automotive use
QG(tot)150 nC - Determines gate driver strength requirement for fast switching
Rth(j-mb)0.45 K/W - Low thermal resistance enables efficient heat transfer to PCB/heatsink

Pinout & Package

BUK761R8-30C is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large copper mounting base electrically connected to the drain for enhanced thermal and current handling.

Pin/Terminal Circuit Role Design Meaning
1 (G)GateControl terminal; requires 10 V for full enhancement; threshold range 1–4.4 V across temperature
2 (D)DrainMain high-side current path; internally bonded to mounting base for low-inductance, high-current routing
3 (S)SourcePower return node; referenced for gate drive; connects to PCB ground plane
Mounting base (mb)Drain connectionExposed copper pad tied directly to drain; provides primary thermal path and current conduction

Key Features

Feature Design Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS power stages
175 °C junction ratingEnables operation in high-ambient environments such as near engines or power inverters
Standard-level gate driveCompatible with 10 V microcontroller outputs - no level-shifting required
Low internal inductanceLD = 2.5 nH, LS = 7.5 nH - minimizes voltage overshoot during fast switching
Integrated source-drain diodeVSD = 0.85 V, trr = 73 ns - supports freewheeling in inductive loads without external diode

Applications

Automotive Body Control Module Industrial Motor Starter

Use Scenario: Switching 12 V DC loads such as headlights, HVAC blowers, and window lift motors in vehicle body control units.

IC Role / Device Role / Timing Role: High-side power switch controlling load current with PWM capability up to 20 kHz.

Use Value: 1.5 mΩ RDS(on) reduces power loss and thermal stress versus higher-RDS(on) alternatives, extending module lifetime.

Use Scenario: Driving brushed DC motors in factory automation equipment requiring robust start-up surge handling.

IC Role / Device Role / Timing Role: Main power switch in H-bridge or half-bridge motor driver stage.

Use Value: 1.7 J avalanche energy rating allows safe interruption of inductive kickback without external clamping components.

Truck Lighting System Off-Highway Equipment Solenoid Driver

Use Scenario: Controlling high-intensity LED arrays and halogen lamps in commercial vehicle lighting systems.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with overtemperature and short-circuit protection support.

Use Value: Q101 qualification ensures reliability under vibration, wide temperature swings, and load dump transients.

Use Scenario: Energizing hydraulic solenoids in construction and agricultural machinery where high peak currents occur.

IC Role / Device Role / Timing Role: Power switch delivering up to 312 A pulsed current (ISM) for solenoid actuation.

Use Value: 312 A peak source current rating supports rapid solenoid pull-in without derating or paralleling devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N3LLH630 V, 2.2 mΩ RDS(on), 120 A ID, H2PAK-2 package, 175 °C ratedHigher RDS(on) but larger package footprint; lower gate charge (120 nC)Preferred where gate drive efficiency is prioritized over conduction loss
IRF1404ZPBF40 V, 4.7 mΩ RDS(on), 202 A ID, TO-220AB package, 175 °C ratedHigher voltage rating and higher RDS(on); through-hole mounting onlyUsed when 40 V system margin or legacy through-hole assembly is required

Compared with BUK761R8-30C, STL220N3LLH6 trades 0.7 mΩ higher on-resistance for reduced gate drive demand, while IRF1404ZPBF offers wider voltage headroom at the cost of significantly higher conduction loss and incompatible packaging - making BUK761R8-30C optimal for space-constrained, high-efficiency 12 V automotive switching.

Availability

BUK761R8-30C is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and off-highway equipment requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for BUK761R8-30C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun out from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK761R8-30C belongs to Nexperia's automotive-qualified TrenchMOS power FET product line, engineered specifically for high-current, high-reliability 12 V load switching in harsh environments.

FAQ

What is the maximum continuous drain current for BUK761R8-30C at 100 °C mounting base temperature?

The BUK761R8-30C supports 100 A continuous drain current at Tmb = 100 °C with VGS = 10 V, as specified in Table 4 of the datasheet. This rating is limited by package thermal capability rather than silicon limits, and derates linearly above 25 °C per Figure 1.

Is BUK761R8-30C suitable for high-frequency PWM switching applications?

Yes, BUK761R8-30C supports high-frequency PWM operation due to its low gate charge (QG(tot) = 150 nC) and fast switching times (td(on) = 52 ns, tf = 134 ns). Its low internal inductance (LS = 7.5 nH) further reduces ringing, making it suitable for PWM frequencies up to 20 kHz in motor and lighting control.

Does BUK761R8-30C have an integrated body diode, and what are its key parameters?

Yes, BUK761R8-30C includes an integrated source-drain diode with VSD = 0.85 V at IS = 25 A and Tj = 25 °C, reverse recovery time trr = 73 ns, and recovered charge Qr = 48 nC - enabling efficient freewheeling in inductive loads without external diodes.

What is the thermal resistance from junction to mounting base for BUK761R8-30C?

The thermal resistance from junction to mounting base (Rth(j-mb)) for BUK761R8-30C is 0.45 K/W, as specified in Table 5. This low value reflects the direct copper connection between the die and the exposed drain pad, enabling efficient heat transfer to the PCB or heatsink.

How does the gate-source threshold voltage of BUK761R8-30C vary with temperature?

The gate-source threshold voltage (VGS(th)) of BUK761R8-30C decreases with rising temperature: it is 1 V at Tj = 175 °C, 2–4 V at Tj = 25 °C, and up to 4.4 V at Tj = −55 °C. This negative temperature coefficient ensures stable turn-on behavior across the full automotive temperature range.

BUK761R8-30C,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10349 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
333W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK761R8-30C,118 FAQ

1.How can I place an order for BUK761R8-30C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK761R8-30C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK761R8-30C,118 reliable?

The price and inventory of BUK761R8-30C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK761R8-30C,118 is usually 5 days.

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BUK761R8-30C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK761R8-30C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK761R8-30C,118?

For technical support, including BUK761R8-30C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK761R8-30C,118 requirements.

6.How does Aetrix verify that BUK761R8-30C,118 is sourced from the original manufacturer or authorized distributors?

All BUK761R8-30C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK761R8-30C,118 meets industry standards.

7.What is the process for return or replacement of BUK761R8-30C,118?

All BUK761R8-30C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK761R8-30C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK761R8-30C,118 part is unused and in its original packaging.

Return procedure for BUK761R8-30C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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