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NXP Semiconductors BUK7624-55,118

Part No.:
BUK7624-55,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK7624-55,118.pdf
Description:
MOSFET N-CH 55V 45A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,582

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Product details

Overview

BUK7624-55 from NXP (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT404 (D2PAK) package, rated for 55 V VDS, 45 A continuous drain current at Tmb = 25 °C, and 24 mΩ RDS(ON) at VGS = 10 V. It integrates ESD protection up to 2 kV and is designed for automotive and industrial DC switching applications including motor control and power distribution.

For engineers reviewing the BUK7624-55 datasheet, BUK7624-55 pinout, BUK7624-55 application, or BUK7624-55 equivalent, key selection criteria include its standard-level gate drive compatibility (10 V), low on-resistance with thermal derating, integral reverse diode characteristics, and SOT404 mounting base thermal path for high-power surface-mount designs.

Technical Context

The BUK7624-55 employs trench-gate MOSFET technology to achieve low RDS(ON) and fast switching with td(on) = 12 ns, tr = 19 ns, td(off) = 25 ns, and tf = 18 ns under specified test conditions. Its internal drain and source inductances are 2.5 nH and 7.5 nH respectively, critical for high-frequency switching layout.

It features a built-in body diode with VSD = 0.95 V at IF = 25 A and trr = 40 ns, enabling synchronous rectification and inductive load handling. The device supports unclamped inductive avalanche energy of 80 mJ at Tmb = 25 °C, confirming ruggedness in flyback and motor drive circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems
ID (DC)45 A at Tmb = 25 °C - Continuous current capability with heatsink mounting
RDS(ON)24 mΩ at VGS = 10 V - Low conduction loss enabling <1.1 W dissipation at 45 A
Ptot103 W at Tmb = 25 °C - Total power handling with mounting base thermal path
Rth j-mb1.45 K/W max - Junction-to-mounting-base thermal resistance for direct heatsink coupling
VGS(th)2.0–4.0 V - Gate threshold range ensuring reliable turn-on with standard logic-level drivers
ESD Rating2 kV HBM - On-chip zener protection eliminates need for external ESD components

Pinout & Package

SOT404 (D2PAK) package with exposed mounting base (pin 2 and mb) thermally and electrically connected to drain; plastic envelope suitable for surface mounting with FR4 PCB footprint per Fig.19.

Pin/TerminalCircuit RoleDesign Meaning
1GateControl terminal requiring ≤16 V gate-source voltage; driven by standard logic or gate driver ICs
2DrainMain high-side or low-side power path; electrically and thermally tied to mounting base (mb)
3SourceReference node for gate drive and current sensing; isolated from mounting base
mbMounting Base / DrainExposed copper pad soldered to PCB thermal pad; provides primary heat dissipation path to heatsink

Key Features

FeatureDesign Value
TrenchMOS™ technologyEnables 24 mΩ RDS(ON) at 55 V rating, reducing conduction losses vs planar MOSFETs
Integral Zener ESD protection2 kV Human Body Model rating eliminates external TVS diodes in most board-level ESD environments
Low internal inductance2.5 nH drain and 7.5 nH source inductance minimize switching voltage overshoot and ringing
Robust body diode40 ns reverse recovery time and 0.95 V forward drop support efficient freewheeling in inductive loads
Avalanche-rated80 mJ non-repetitive unclamped inductive energy handling ensures reliability during transient overloads

Applications

Automotive Power DistributionIndustrial Motor Control

Use Scenario: High-side load switch for battery-fed cabin modules (e.g., seat heaters, window lifts) in 12 V/24 V vehicles.

IC Role / Device Role / Timing Role: N-channel power switch operating in static on/off mode with gate driven by microcontroller GPIO or dedicated driver.

Use Value: 24 mΩ RDS(ON) limits voltage drop to <1.1 V at 45 A, minimizing thermal stress and enabling compact heatsinking.

Use Scenario: Half-bridge low-side switch in 3-phase BLDC motor drives for HVAC blowers or pumps.

IC Role / Device Role / Timing Role: Fast-switching power stage element with tf = 18 ns and low Coss (280–340 pF) for efficient PWM operation up to 20 kHz.

Use Value: Integrated body diode with 40 ns trr reduces need for external freewheeling diodes and improves commutation efficiency.

DC-DC Converter Primary SwitchPower Supply OR-ing Circuit

Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters for telecom or industrial power supplies.

IC Role / Device Role / Timing Role: High-current, high-efficiency switching element with 103 W Ptot and 1.45 K/W Rth j-mb for forced-air or heatsink-cooled operation.

Use Value: Low gate charge and fast switching reduce dynamic losses, improving converter efficiency above 90% at full load.

Use Scenario: OR-ing FET in redundant 48 V DC power systems to prevent backfeed and enable hot-swap capability.

IC Role / Device Role / Timing Role: Low-RDS(ON) pass transistor controlled by ideal diode controller IC to replace Schottky diodes.

Use Value: 24 mΩ RDS(ON) cuts conduction loss by >75% vs 40 mΩ discrete diodes, reducing thermal management requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06L60 V VDS, 55 A ID, 14 mΩ RDS(ON), TO-220 package, no integrated ESD protectionHigher voltage margin but larger through-hole package; requires external ESD protectionPreferred where higher VDS margin and lower RDS(ON) outweigh SMT and ESD integration needs
IRFZ44NPBF55 V VDS, 49 A ID, 28 mΩ RDS(ON), TO-220 package, no avalanche rating or ESD protectionHigher RDS(ON) and no avalanche energy spec; legacy planar processCost-sensitive replacement where thermal budget allows higher conduction loss and no ruggedness requirements

Compared with STP55NF06L and IRFZ44NPBF, the BUK7624-55 offers superior SMT integration via SOT404, on-chip 2 kV ESD protection, and verified 80 mJ avalanche capability-critical for automotive and industrial reliability without added components or layout complexity.

Availability

BUK7624-55 is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor control, DC-DC converter primary switching, and redundant power OR-ing applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for BUK7624-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.

The BUK7624-55 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for robust, high-current switching in harsh environments where reliability, thermal performance, and integrated protection are essential.

FAQ

What is the maximum continuous drain current rating for the BUK7624-55?

The BUK7624-55 is rated for 45 A continuous drain current (ID) at mounting base temperature (Tmb) of 25 °C. At Tmb = 100 °C, the derated current is 31 A. This reflects its thermal design for surface-mount use with heatsink coupling via the exposed mounting base (mb) pin.

Does the BUK7624-55 require external ESD protection?

No, the BUK7624-55 includes integral zener diodes providing 2 kV electrostatic discharge (HBM) protection on all pins, eliminating the need for external TVS components in typical automotive and industrial board-level ESD environments.

What is the gate threshold voltage range for the BUK7624-55?

The gate threshold voltage (VGS(th)) of the BUK7624-55 is specified from 2.0 V to 4.0 V at Tj = 25 °C and ID = 1 mA. At Tj = 175 °C, the minimum drops to 1.0 V, ensuring reliable turn-on across the full operating temperature range with standard 5 V or 10 V gate drivers.

Can the BUK7624-55 be used in avalanche conditions?

Yes-the BUK7624-55 is rated for 80 mJ non-repetitive unclamped inductive avalanche energy (WDSS) at Tmb = 25 °C, ID = 40 A, VDD ≤ 25 V, and VGS = 10 V. This confirms its ruggedness in inductive switching applications such as motor drives and relay replacement.

What is the thermal resistance from junction to mounting base for the BUK7624-55?

The maximum thermal resistance from junction to mounting base (Rth j-mb) for the BUK7624-55 is 1.45 K/W. This low value enables efficient heat transfer to an external heatsink when the mounting base (mb) is soldered directly to a large copper thermal pad on the PCB.

BUK7624-55,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
103W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK7624-55,118 FAQ

1.How can I place an order for BUK7624-55,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7624-55,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7624-55,118 reliable?

The price and inventory of BUK7624-55,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7624-55,118 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7624-55,118 transactions.

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BUK7624-55,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7624-55,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7624-55,118?

For technical support, including BUK7624-55,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7624-55,118 requirements.

6.How does Aetrix verify that BUK7624-55,118 is sourced from the original manufacturer or authorized distributors?

All BUK7624-55,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7624-55,118 meets industry standards.

7.What is the process for return or replacement of BUK7624-55,118?

All BUK7624-55,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7624-55,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7624-55,118 part is unused and in its original packaging.

Return procedure for BUK7624-55,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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