NXP Semiconductors BUK7624-55,118
- Part No.:
- BUK7624-55,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK7624-55,118.pdf
- Description:
- MOSFET N-CH 55V 45A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,582
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Product details
Overview
BUK7624-55 from NXP (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT404 (D2PAK) package, rated for 55 V VDS, 45 A continuous drain current at Tmb = 25 °C, and 24 mΩ RDS(ON) at VGS = 10 V. It integrates ESD protection up to 2 kV and is designed for automotive and industrial DC switching applications including motor control and power distribution.
For engineers reviewing the BUK7624-55 datasheet, BUK7624-55 pinout, BUK7624-55 application, or BUK7624-55 equivalent, key selection criteria include its standard-level gate drive compatibility (10 V), low on-resistance with thermal derating, integral reverse diode characteristics, and SOT404 mounting base thermal path for high-power surface-mount designs.
Technical Context
The BUK7624-55 employs trench-gate MOSFET technology to achieve low RDS(ON) and fast switching with td(on) = 12 ns, tr = 19 ns, td(off) = 25 ns, and tf = 18 ns under specified test conditions. Its internal drain and source inductances are 2.5 nH and 7.5 nH respectively, critical for high-frequency switching layout.
It features a built-in body diode with VSD = 0.95 V at IF = 25 A and trr = 40 ns, enabling synchronous rectification and inductive load handling. The device supports unclamped inductive avalanche energy of 80 mJ at Tmb = 25 °C, confirming ruggedness in flyback and motor drive circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems |
| ID (DC) | 45 A at Tmb = 25 °C - Continuous current capability with heatsink mounting |
| RDS(ON) | 24 mΩ at VGS = 10 V - Low conduction loss enabling <1.1 W dissipation at 45 A |
| Ptot | 103 W at Tmb = 25 °C - Total power handling with mounting base thermal path |
| Rth j-mb | 1.45 K/W max - Junction-to-mounting-base thermal resistance for direct heatsink coupling |
| VGS(th) | 2.0–4.0 V - Gate threshold range ensuring reliable turn-on with standard logic-level drivers |
| ESD Rating | 2 kV HBM - On-chip zener protection eliminates need for external ESD components |
Pinout & Package
SOT404 (D2PAK) package with exposed mounting base (pin 2 and mb) thermally and electrically connected to drain; plastic envelope suitable for surface mounting with FR4 PCB footprint per Fig.19.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤16 V gate-source voltage; driven by standard logic or gate driver ICs |
| 2 | Drain | Main high-side or low-side power path; electrically and thermally tied to mounting base (mb) |
| 3 | Source | Reference node for gate drive and current sensing; isolated from mounting base |
| mb | Mounting Base / Drain | Exposed copper pad soldered to PCB thermal pad; provides primary heat dissipation path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 24 mΩ RDS(ON) at 55 V rating, reducing conduction losses vs planar MOSFETs |
| Integral Zener ESD protection | 2 kV Human Body Model rating eliminates external TVS diodes in most board-level ESD environments |
| Low internal inductance | 2.5 nH drain and 7.5 nH source inductance minimize switching voltage overshoot and ringing |
| Robust body diode | 40 ns reverse recovery time and 0.95 V forward drop support efficient freewheeling in inductive loads |
| Avalanche-rated | 80 mJ non-repetitive unclamped inductive energy handling ensures reliability during transient overloads |
Applications
| Automotive Power Distribution | Industrial Motor Control |
|---|---|
Use Scenario: High-side load switch for battery-fed cabin modules (e.g., seat heaters, window lifts) in 12 V/24 V vehicles. IC Role / Device Role / Timing Role: N-channel power switch operating in static on/off mode with gate driven by microcontroller GPIO or dedicated driver. Use Value: 24 mΩ RDS(ON) limits voltage drop to <1.1 V at 45 A, minimizing thermal stress and enabling compact heatsinking. | Use Scenario: Half-bridge low-side switch in 3-phase BLDC motor drives for HVAC blowers or pumps. IC Role / Device Role / Timing Role: Fast-switching power stage element with tf = 18 ns and low Coss (280–340 pF) for efficient PWM operation up to 20 kHz. Use Value: Integrated body diode with 40 ns trr reduces need for external freewheeling diodes and improves commutation efficiency. |
| DC-DC Converter Primary Switch | Power Supply OR-ing Circuit |
Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters for telecom or industrial power supplies. IC Role / Device Role / Timing Role: High-current, high-efficiency switching element with 103 W Ptot and 1.45 K/W Rth j-mb for forced-air or heatsink-cooled operation. Use Value: Low gate charge and fast switching reduce dynamic losses, improving converter efficiency above 90% at full load. | Use Scenario: OR-ing FET in redundant 48 V DC power systems to prevent backfeed and enable hot-swap capability. IC Role / Device Role / Timing Role: Low-RDS(ON) pass transistor controlled by ideal diode controller IC to replace Schottky diodes. Use Value: 24 mΩ RDS(ON) cuts conduction loss by >75% vs 40 mΩ discrete diodes, reducing thermal management requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 14 mΩ RDS(ON), TO-220 package, no integrated ESD protection | Higher voltage margin but larger through-hole package; requires external ESD protection | Preferred where higher VDS margin and lower RDS(ON) outweigh SMT and ESD integration needs |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(ON), TO-220 package, no avalanche rating or ESD protection | Higher RDS(ON) and no avalanche energy spec; legacy planar process | Cost-sensitive replacement where thermal budget allows higher conduction loss and no ruggedness requirements |
Compared with STP55NF06L and IRFZ44NPBF, the BUK7624-55 offers superior SMT integration via SOT404, on-chip 2 kV ESD protection, and verified 80 mJ avalanche capability-critical for automotive and industrial reliability without added components or layout complexity.
Availability
BUK7624-55 is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor control, DC-DC converter primary switching, and redundant power OR-ing applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for BUK7624-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.
The BUK7624-55 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for robust, high-current switching in harsh environments where reliability, thermal performance, and integrated protection are essential.
FAQ
What is the maximum continuous drain current rating for the BUK7624-55?
The BUK7624-55 is rated for 45 A continuous drain current (ID) at mounting base temperature (Tmb) of 25 °C. At Tmb = 100 °C, the derated current is 31 A. This reflects its thermal design for surface-mount use with heatsink coupling via the exposed mounting base (mb) pin.
Does the BUK7624-55 require external ESD protection?
No, the BUK7624-55 includes integral zener diodes providing 2 kV electrostatic discharge (HBM) protection on all pins, eliminating the need for external TVS components in typical automotive and industrial board-level ESD environments.
What is the gate threshold voltage range for the BUK7624-55?
The gate threshold voltage (VGS(th)) of the BUK7624-55 is specified from 2.0 V to 4.0 V at Tj = 25 °C and ID = 1 mA. At Tj = 175 °C, the minimum drops to 1.0 V, ensuring reliable turn-on across the full operating temperature range with standard 5 V or 10 V gate drivers.
Can the BUK7624-55 be used in avalanche conditions?
Yes-the BUK7624-55 is rated for 80 mJ non-repetitive unclamped inductive avalanche energy (WDSS) at Tmb = 25 °C, ID = 40 A, VDD ≤ 25 V, and VGS = 10 V. This confirms its ruggedness in inductive switching applications such as motor drives and relay replacement.
What is the thermal resistance from junction to mounting base for the BUK7624-55?
The maximum thermal resistance from junction to mounting base (Rth j-mb) for the BUK7624-55 is 1.45 K/W. This low value enables efficient heat transfer to an external heatsink when the mounting base (mb) is soldered directly to a large copper thermal pad on the PCB.
BUK7624-55,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 103W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK7624-55,118 FAQ
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Please submit a Request for Quotation (RFQ) for BUK7624-55,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK7624-55,118 is sourced from the original manufacturer or authorized distributors?
All BUK7624-55,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7624-55,118 meets industry standards.
7.What is the process for return or replacement of BUK7624-55,118?
All BUK7624-55,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7624-55,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7624-55,118 part is unused and in its original packaging.
Return procedure for BUK7624-55,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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