NXP Semiconductors BUK7624-55A,118

Overview

BUK7624-55A from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 55 V drain-source voltage, 47 A DC drain current at T_mb = 25 °C, and 106 W total power dissipation. It features 20 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 25 A (T_j = 25 °C), and is Q101-compliant for automotive use in 12 V/24 V load switching.

For engineers reviewing the BUK7624-55A datasheet, BUK7624-55A pinout, BUK7624-55A application, or BUK7624-55A equivalent, this page delivers verified electrical parameters, thermal performance data, mounting-base–referenced thermal resistance (R_th(j-mb) = 1.4 K/W), gate threshold behavior across temperature, and validated automotive-grade ruggedness including 76 mJ non-repetitive avalanche energy.

Technical Context

This standard-level MOSFET uses TrenchMOS™ technology to achieve low on-resistance while maintaining robust avalanche capability and 175 °C junction rating. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable turn-on with 5 V logic-level drive in automotive control modules.

The device integrates a source-drain diode with 0.85 V typical forward voltage at 25 A and 49 ns reverse recovery time under defined dI/dt conditions. Dynamic parameters include C_iss = 980 pF (typ), C_oss = 240 pF (typ), and fast switching times: t_d(on) = 11 ns, t_r = 56 ns, t_d(off) = 38 ns, t_f = 31 ns - optimized for high-efficiency DC-DC and motor drive stages.

Key Specifications

Pinout & Package

SOT404 (D2-PAK) plastic surface-mount package with isolated mounting base electrically connected to drain. Designed for high-power density PCB layouts with thermal pad soldering and mechanical screw attachment support.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP48NF55 and IRFZ44NPBF, the BUK7624-55A trades slightly higher R_DS(on) for guaranteed automotive qualification, superior thermal resistance (1.4 K/W vs ≥2.5 K/W in TO-220), and integrated avalanche ruggedness - making it the preferred choice for safety-critical, thermally constrained, or high-reliability 12 V/24 V power switching.

Availability

BUK7624-55A is available at Aetrix Electronics and suitable for automotive body control, industrial motor drives, LED lighting systems, and power distribution units requiring stable component supply across multi-year production cycles.

Supply support for BUK7624-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK7624-55A belongs to Nexperia's TrenchMOS™ standard-level FET product line, engineered specifically for robust, high-current power switching in harsh automotive and industrial environments with emphasis on thermal performance and reliability.

FAQ

What is the maximum continuous drain current for BUK7624-55A at 100 °C mounting base temperature?

The BUK7624-55A supports 33 A DC drain current at T_mb = 100 °C with V_GS = 10 V, as specified in Table 3 (Limiting values). This derating reflects thermal limits of the SOT404 package and must be applied in thermal design calculations alongside R_th(j-mb) = 1.4 K/W to ensure junction temperature stays ≤175 °C. The BUK7624-55A maintains safe operation under these conditions without requiring forced air cooling.

Is BUK7624-55A suitable for 3.3 V microcontroller gate drive?

Yes - the BUK7624-55A has a gate threshold voltage (V_GS(th)) of 2–4 V at 25 °C, and its transfer characteristics (Figure 13) confirm measurable drain current begins at ~2.5 V. However, full enhancement (low R_DS(on)) requires ≥10 V gate drive; for 3.3 V logic, a gate driver IC is recommended to achieve optimal 20 mΩ conduction. The BUK7624-55A itself does not integrate level-shifting.

Does BUK7624-55A have avalanche capability, and how is it rated?

Yes - the BUK7624-55A is rated for 76 mJ non-repetitive avalanche energy (W_DSS) under unclamped inductive load conditions (ID = 39 A, V_DS ≤55 V, V_GS = 10 V, R_GS = 50 Ω, starting T_mb = 25 °C). This rating is measured and documented in Table 3, confirming intrinsic ruggedness for inductive load switching without external protection diodes in many automotive applications.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for BUK7624-55A?

The BUK7624-55A has a specified R_th(j-mb) of 1.4 K/W, per Table 4. This value is derived from transient thermal impedance measurements (Figure 4) and applies to the SOT404 package with proper mounting base contact. It is significantly lower than TO-220 alternatives (e.g., ~2.5 K/W), enabling higher power density and simplified thermal design when bolted to heatsinks or large copper areas.

How does the source-drain diode performance of BUK7624-55A compare to discrete Schottky diodes?

The integrated source-drain diode in the BUK7624-55A has V_SD = 0.85 V (typ) at 25 A and t_rr = 49 ns, per Table 5. While faster and more compact than general-purpose rectifiers, it is slower and has higher forward drop than dedicated Schottky diodes (e.g., 0.4–0.6 V, <10 ns t_rr). For high-frequency synchronous rectification, an external Schottky is preferred; for flyback protection in motor drives, the BUK7624-55A's diode is sufficient and simplifies layout.