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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK762R4-60E,118

Name: BUK762R4-60E,118
Brand: Nexperia USA Inc.
SKU: BUK762R4-60E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK762R4-60E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK762R4-60E,118.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

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Product details

Overview

BUK762R4-60E from Nexperia is a standard-level N-channel TrenchMOS power FET in SOT404 (D2PAK) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 175 °C junction temperature. It delivers 1.9 mΩ typical R_DS(on) at V_GS = 10 V and ID = 25 A, and is AEC-Q101 qualified for automotive power switching applications including electric power steering and start-stop micro-hybrid systems.

For engineers reviewing the BUK762R4-60E datasheet, BUK762R4-60E pinout, BUK762R4-60E application, or BUK762R4-60E equivalent, key selection criteria include its repetitive avalanche rating (660 mJ), true standard-level gate threshold (>1 V at 175 °C), thermal resistance (0.43 K/W j-to-mb), and suitability for high-current, thermally demanding 12 V automotive loads.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and robust switching performance. Its gate threshold voltage remains functional up to 175 °C (V_GS(th) ≥ 1 V), enabling reliable operation in engine bay environments without requiring gate driver level-shifting.

The device features integrated source-drain diode with 54 ns reverse recovery time and 89 nC recovered charge, supporting synchronous rectification and inductive load control. Its 2.5 nH internal drain inductance and 7.5 nH source inductance are optimized for minimizing switching oscillation in high-di/dt automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems under load dump transients.
R_DS(on)	1.9 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 70 A, critical for thermal management in compact ECUs.
I_D cont.	120 A @ T_mb = 25 °C - Continuous current capability limited by D2PAK package thermal performance, not silicon.
E_AS	660 mJ - Single-pulse unclamped avalanche energy rating ensures ruggedness against inductive kickback in solenoid/motor drive circuits.
Q_GD	45.5 nC - Gate-drain charge directly impacts Miller-induced turn-off delay and EMI in hard-switched topologies.
R_th(j-mb)	0.43 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsink mounting for high-power density designs.
V_GS(th)	≥1 V @ T_j = 175 °C - True standard-level gate allows direct interface with 3.3 V/5 V microcontrollers without level shifters in high-temp zones.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level MOSFET control input; requires no level shifting for 3.3 V–5 V logic drive at full temperature range.
2 (D)	Drain	Main high-side or low-side power switch node; internally bonded to mounting base for low-inductance, high-current return path.
3 (S)	Source	Power return reference; used for current sensing and gate drive referencing in high-side configurations.
mb	Mounting Base	Electrically tied to drain; provides primary thermal interface to heatsink-critical for sustaining 349 W P_tot at T_mb = 25 °C.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability across -55 °C to +175 °C, including temperature cycling, humidity, and mechanical shock.
Repetitive avalanche rated	Withstands repeated inductive energy dumps up to 660 mJ without degradation-essential for motor commutation and solenoid de-energization.
175 °C maximum junction temperature	Enables placement in high-ambient zones (e.g., near engine blocks or inverters) without derating or forced cooling.
True standard-level gate	V_GS(th) > 1 V at 175 °C ensures turn-on margin remains intact under worst-case thermal stress, eliminating need for gate boosters.
Low R_DS(on) × Q_G figure of merit	158 nC total gate charge with 1.9 mΩ R_DS(on) supports efficient high-frequency PWM in EPS and transmission control modules.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: High-current H-bridge driving 12 V DC brushless motors for torque assist in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side and high-side power switch in dual-phase motor driver stage; handles bidirectional 80–100 A peak currents.

Use Value: 1.9 mΩ R_DS(on) minimizes conduction loss during sustained assist, while 660 mJ avalanche rating absorbs regenerative braking energy safely.

Use Scenario: Controlled engagement/disengagement of starter motor and alternator in 12 V stop-start cycles.

IC Role / Device Role / Timing Role: Main power switch for starter relay replacement and intelligent battery load management.

Use Value: 120 A continuous rating and 1036 A pulsed current capability ensure reliable cranking under cold-cranking conditions (-40 °C).

Transmission Control Solenoids

12 V Automotive Lighting Control

Use Scenario: PWM-driven proportional pressure control in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: High-side switch delivering precise 0.5–2 A solenoid current with fast 50 ns rise time and 71 ns fall time.

Use Value: Low Q_GD (45.5 nC) and tight gate charge matching enable accurate duty-cycle control and minimal current overshoot.

Use Scenario: High-side switching of LED headlamps and matrix lighting arrays with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Load switch managing up to 15 A per channel with integrated body diode for inductive flyback handling.

Use Value: 54 ns reverse recovery time and 89 nC Q_r reduce switching losses and EMI in constant-current LED drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, R_DS(on) = 1.3 mΩ @ 10 V, but requires gate drive ≥ 10 V for full enhancement; not AEC-Q101 qualified.	Higher current capability suits larger traction inverters, but lacks automotive qualification and high-temp V_GS(th) stability.	Select only for non-automotive industrial 12 V systems where qualification and 175 °C gate margin are not required.
IRF1404ZPBF	40 V, 202 A, R_DS(on) = 3.8 mΩ @ 10 V; AEC-Q101 not claimed; max T_j = 175 °C but V_GS(th) drops below 1 V above 150 °C.	Limited to 40 V systems; unsuitable for 12 V load-dump tolerant designs requiring 60 V rating.	Consider only for cost-sensitive 12 V auxiliary loads where 60 V blocking and full-temperature gate margin are not critical.

Compared with STL220N6F7 and IRF1404ZPBF, BUK762R4-60E uniquely combines AEC-Q101 qualification, 60 V rating, 1.9 mΩ R_DS(on), and guaranteed >1 V V_GS(th) at 175 °C-making it the only drop-in solution for thermally constrained, safety-critical automotive power switching where gate drive simplicity and avalanche ruggedness are mandatory.

Availability

BUK762R4-60E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK762R4-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where robustness, thermal efficiency, and qualification compliance are non-negotiable.

FAQ

Is BUK762R4-60E suitable for high-side switching in 12 V automotive applications?

Yes. Its standard-level gate (V_GS(th) ≥ 1 V at 175 °C), 60 V V_DS rating, and drain-connected mounting base support robust high-side configuration. The device sustains 120 A continuous current when mounted on an adequately sized heatsink, and its internal source inductance (7.5 nH) is optimized for low-noise gate drive referencing.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Per Figure 2 in the datasheet, continuous 120 A operation is only possible at T_mb ≤ 25 °C. At T_mb = 100 °C, the rated continuous current drops to 120 A (same value due to package limitation), but practical design must apply derating curves-actual usable current at 100 °C is ~65 A based on normalized P_der in Figure 1.

Does BUK762R4-60E include an integrated body diode, and what are its recovery characteristics?

Yes-it features a monolithic source-drain diode with typical V_SD = 0.77 V at 25 A and 25 °C. Its reverse recovery time is 54 ns with 89 nC recovered charge (Q_r) under specified conditions (I_S = 20 A, dI_S/dt = −100 A/µs), enabling use in freewheeling and synchronous rectification roles without external diodes.

How does the repetitive avalanche rating compare to single-pulse capability?

The datasheet specifies only a single-pulse avalanche energy rating (660 mJ). Repetitive avalanche capability is not characterized or guaranteed-designs requiring repeated energy absorption must implement external clamping or snubbing, as the device is rated for repetitive operation only within SOA limits defined in Figure 3.

BUK762R4-60E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 158 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK762R4-60E,118 FAQ

1.How can I place an order for BUK762R4-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK762R4-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK762R4-60E,118 reliable?

The price and inventory of BUK762R4-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK762R4-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK762R4-60E,118?

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4.How is shipping managed for BUK762R4-60E,118?

BUK762R4-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK762R4-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK762R4-60E,118?

For technical support, including BUK762R4-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK762R4-60E,118 requirements.

6.How does Aetrix verify that BUK762R4-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK762R4-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK762R4-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK762R4-60E,118?

All BUK762R4-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK762R4-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK762R4-60E,118 part is unused and in its original packaging.

Return procedure for BUK762R4-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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