Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK762R6-60E,118

Part No.:
BUK762R6-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK762R6-60E,118.pdf
Description:
MOSFET N-CH 60V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,795

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK762R6-60E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It features 1.97 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, AEC-Q101 qualification, and repetitive avalanche capability-designed for high-current automotive power switching such as electric power steering.

For engineers reviewing the BUK762R6-60E datasheet, BUK762R6-60E pinout, BUK762R6-60E application, or BUK762R6-60E equivalent, key selection criteria include its 175 °C thermal rating, true standard-level gate (VGS(th) > 1 V at 175 °C), low RDS(on), avalanche ruggedness, and D2PAK mounting-base thermal interface.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and robust switching performance under thermally demanding conditions. Its gate threshold voltage remains functional up to 175 °C, enabling reliable turn-on in hot under-hood environments without requiring level-shifting circuitry.

The device integrates a source-drain diode with 44 ns reverse recovery time and 67 nC recovered charge, supporting synchronous rectification and freewheeling in high-frequency motor control. Its 0.46 K/W junction-to-mounting-base thermal resistance enables efficient heat transfer to heatsinks in surface-mounted automotive modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage compatible with 12 V automotive systems with load-dump transients.
RDS(on) 1.97 mΩ (typ) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 70 A, critical for thermal management in EPS and transmission control.
ID (continuous) 120 A at Tmb = 25 °C - Limited by package; supports high-current solenoid and motor drivers without parallel devices.
EAS 519 mJ (non-repetitive avalanche energy) - Withstands unclamped inductive switching events in start-stop micro-hybrid actuators.
Tj max 175 °C - Qualified per AEC-Q101; allows operation in engine bay locations where ambient exceeds 125 °C.
QGD 43.7 nC - Low gate-drain charge reduces Miller-induced switching instability during hard commutation in high-side configurations.
Rth(j-mb) 0.46 K/W - Enables direct thermal coupling to metal-core PCBs or heatsinks, reducing thermal margin risk in compact modules.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is internally connected to drain and serves as primary thermal and electrical path.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Standard-level input (VGS(th) > 1 V at 175 °C); compatible with 5 V/12 V microcontroller outputs without gate driver.
2 (D) Drain High-current power terminal; electrically and thermally tied to mounting base for low-inductance, high-power routing.
3 (S) Source Return path for load current; isolated from mounting base to enable high-side switch configuration.
mb Mounting Base Drain-connected copper pad; provides mechanical attachment and dominant thermal path to heatsink or PCB copper pour.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-required for safety-critical EPS and transmission modules.
Repetitive avalanche rated Withstands repeated inductive turn-off stress without degradation-essential for solenoid and lamp drivers with long cable inductance.
175 °C junction rating Enables placement near heat sources (e.g., engine blocks, inverters) without derating or forced cooling in space-constrained ECUs.
True standard-level gate VGS(th) ≥ 1 V at 175 °C ensures predictable turn-on using standard 5 V logic, eliminating need for gate voltage boosters in 12 V systems.
Low QGD/QG ratio QGD = 43.7 nC / QG(tot) ≈ 140 nC → ~31% - Improves switching controllability and reduces risk of shoot-through in half-bridge topologies.

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Control

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules operating continuously at 100–120 A peak.

IC Role / Device Role / Timing Role: Main power switch in three-phase inverter bridge; handles PWM frequencies up to 20 kHz with minimal conduction and switching loss.

Use Value: 1.97 mΩ RDS(on) and 0.46 K/W Rth(j-mb) limit junction temperature rise to <120 °C under full load, avoiding thermal shutdown during parking maneuvers.

Use Scenario: Controlling starter-generator engagement and battery isolation in 12 V micro-hybrid vehicles during engine restart.

IC Role / Device Role / Timing Role: High-side load switch managing bidirectional current flow between battery and integrated starter-generator (ISG).

Use Value: Repetitive avalanche rating and 519 mJ EAS absorb inductive kickback during rapid ISG disconnection, preventing voltage overshoot beyond 60 V.

Transmission Valve Control High-Performance Lamp & Solenoid Driver

Use Scenario: Driving electro-hydraulic pressure control valves in 8-speed automatic transmissions, requiring precise 10–100 ms pulse-width modulated current regulation.

IC Role / Device Role / Timing Role: Low-side switch in constant-current valve driver circuits; operates with fast turn-on/turn-off (tr = 50 ns, tf = 58 ns) for accurate duty-cycle fidelity.

Use Value: 44 ns reverse recovery time and 67 nC Qr minimize diode conduction loss during freewheeling, improving efficiency and reducing coil heating.

Use Scenario: Direct-driving high-wattage halogen headlamps (55–100 W) and ABS solenoids in body control modules with minimal external components.

IC Role / Device Role / Timing Role: Single-chip high-current switch replacing discrete MOSFET + driver + protection IC solutions; accepts 5 V MCU PWM directly.

Use Value: Standard-level gate and 175 °C rating allow direct integration into compact, sealed BCM housings without auxiliary cooling or level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, RDS(on) = 1.2 mΩ @ 10 V but requires gate drive ≥ 10 V; not AEC-Q101 qualified. Higher current capability but lacks automotive qualification; suitable only for industrial motor drives. Select only if AEC-Q101 is not required and higher peak current is needed with external gate driver support.
IRFB4115PBF 150 V, 110 A, RDS(on) = 4.5 mΩ @ 10 V; TO-220 package; AEC-Q101 not claimed. Lower RDS(on) than BUK762R6-60E would suggest-but actual on-resistance is 2.3× higher at same VGS; lacks D2PAK thermal interface. Prefer only when 150 V rating is mandatory and board-level heatsinking is available; avoid for space-constrained automotive modules.

Compared with STL220N6F7 and IRFB4115PBF, BUK762R6-60E uniquely combines AEC-Q101 compliance, true standard-level gate operation, D2PAK thermal performance, and verified 175 °C capability-making it the only drop-in solution for production automotive EPS and transmission control modules requiring zero gate-level translation and validated reliability.

Availability

BUK762R6-60E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission valve actuation requiring stable component supply across multi-year automotive production programs.

Supply support for BUK762R6-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

BUK762R6-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive 12 V vehicle subsystems where AEC-Q101 compliance, avalanche robustness, and standard-level gate drive are non-negotiable.

FAQ

Is BUK762R6-60E suitable for high-side switching configurations?

Yes. The SOT404 package isolates the source terminal from the mounting base, enabling high-side use with appropriate gate driving. Its standard-level gate (VGS(th) > 1 V at 175 °C) allows direct interfacing with 5 V MCUs when used with bootstrap or isolated gate drivers-confirmed in Nexperia's AN10273 application note for automotive high-side designs.

What is the maximum allowable PCB copper area for optimal thermal performance?

For best thermal performance, Nexperia recommends a minimum 1000 mm² copper pour (2 oz Cu) connected to the mounting base via ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). This achieves near-datasheet Rth(j-a) of 50 K/W; larger areas further reduce junction temperature but yield diminishing returns beyond 2000 mm².

Does BUK762R6-60E require external gate resistors for automotive PWM operation?

Yes. A series gate resistor (typically 5–15 Ω) is required to dampen ringing caused by internal LD = 2.5 nH and LS = 7.5 nH, especially at PWM frequencies >10 kHz. Nexperia's Fig. 14 shows gate charge linearity up to 14 V, confirming compatibility with standard gate drivers when properly terminated.

How does its avalanche rating compare to similar D2PAK MOSFETs?

At 519 mJ (unclamped, single-pulse), BUK762R6-60E delivers 2.1× higher avalanche energy than STP120N6F7 (245 mJ) and 1.7× higher than IPP60R190C6 (305 mJ), all tested at identical conditions (ID = 120 A, Vsup ≤ 60 V). This is enabled by TrenchMOS cell design and optimized silicon layout-not just package rating.

BUK762R6-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
324W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK762R6-60E,118 FAQ

1.How can I place an order for BUK762R6-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK762R6-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK762R6-60E,118 reliable?

The price and inventory of BUK762R6-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK762R6-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK762R6-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK762R6-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK762R6-60E,118?

BUK762R6-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK762R6-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK762R6-60E,118?

For technical support, including BUK762R6-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK762R6-60E,118 requirements.

6.How does Aetrix verify that BUK762R6-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK762R6-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK762R6-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK762R6-60E,118?

All BUK762R6-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK762R6-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK762R6-60E,118 part is unused and in its original packaging.

Return procedure for BUK762R6-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK762R6-60E,118 Tags

  • BUK762R6-60E,118
  • BUK762R6-60E,118 PDF
  • BUK762R6-60E,118 Datasheet
  • BUK762R6-60E,118 Specifications
  • BUK762R6-60E,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK762R6-60E,118
  • Buy BUK762R6-60E,118
  • BUK762R6-60E,118 Price
  • BUK762R6-60E,118 Distributor
  • BUK762R6-60E,118 Supplier
  • BUK762R6-60E,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER