Nexperia USA Inc. BUK762R7-30B,118

Overview

BUK762R7-30B from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 30 V V_DS, 2.3 mΩ R_DS(on) at 25 °C/10 V, and 75 A continuous drain current at T_mb = 25 °C. It features AEC-Q101 qualification, 175 °C junction temperature rating, and unclamped avalanche energy of 2.3 J - designed for automotive 12 V power switching including motors, lamps, and solenoids.

For engineers reviewing the BUK762R7-30B datasheet, BUK762R7-30B pinout, BUK762R7-30B application, or BUK762R7-30B equivalent, key selection criteria include gate drive compatibility with standard 10 V logic, thermal performance under mounting base cooling, R_DS(on) stability across -55 to 175 °C, and avalanche ruggedness in inductive load commutation.

Technical Context

This device employs TrenchMOS technology to achieve low conduction losses and high thermal robustness. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable turn-on under elevated temperature conditions typical in engine bay environments.

The integrated source-drain diode exhibits 0.85–1.2 V forward voltage at 40 A and 25 °C, with 88 ns reverse recovery time and 132 nC recovered charge - critical for synchronous rectification and freewheeling behavior in DC motor drives and solenoid control circuits.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N3LLH6 and IRF1404ZPBF, BUK762R7-30B uniquely balances AEC-Q101 compliance, D2PAK mounting base thermal interface, and 2.3 mΩ R_DS(on) - making it the only option qualified for thermally demanding, safety-critical automotive power switching where board-level heatsinking is constrained.

Availability

BUK762R7-30B is available at Aetrix Electronics and suitable for automotive body electronics, engine management subsystems, and commercial vehicle power distribution requiring stable component supply across extended product lifecycles.

Supply support for BUK762R7-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

BUK762R7-30B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for robust 12 V load switching in harsh thermal and electrical environments.

FAQ

Is BUK762R7-30B suitable for high-frequency PWM switching above 100 kHz?

No - its Q_G(tot) = 91 nC and Q_GD = 29 nC result in relatively high gate drive power requirements. At 100 kHz, typical gate driver losses exceed 1 W with 10 V drive, and switching times (t_r = 107 ns, t_f = 118 ns) limit practical use to ≤50 kHz in hard-switched applications without active gate control optimization.

Can BUK762R7-30B be used in a high-side configuration with 12 V supply?

Yes, but requires a gate driver capable of providing ≥10 V referenced to the drain potential. The device is not a level-shifted or integrated high-side solution; standalone use in high-side topology demands isolated or bootstrap gate drive circuitry to maintain V_GS ≥10 V during conduction.

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies thermal performance assuming "minimum footprint" for R_th(j-a) = 50 K/W. For optimal mounting base cooling, Nexperia recommends ≥10 cm² of 2 oz copper connected directly to the drain pad via multiple thermal vias - achieving R_th(j-mb) ≈ 0.5 K/W and supporting full 75 A continuous current at T_mb ≤ 25 °C.

Does BUK762R7-30B have integrated ESD protection?

No - it has no built-in ESD protection diodes. Gate oxide withstands ±20 V V_GS, but human-body-model ESD events >2 kV can cause latent damage. External TVS or RC filtering on gate traces is required in production assemblies, especially in automotive assembly lines with high static potential.