Nexperia USA Inc. BUK7635-55A,118
- Part No.:
- BUK7635-55A,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK7635-55A,118.pdf
- Description:
- MOSFET N-CH 55V 35A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,598
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Product details
Overview
BUK7635-55A from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive-critical power switching. It delivers 35 A continuous drain current at 25 °C mounting base temperature, 55 V drain-source voltage rating, and 30 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, enabling efficient 12 V/24 V load control in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK7635-55A datasheet, BUK7635-55A pinout, BUK7635-55A application, or BUK7635-55A equivalent, this device is selected for high-reliability automotive power switching where AEC-Q101 qualification, low conduction loss, and unclamped avalanche energy handling (49 mJ) are essential design requirements.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-state resistance while maintaining robust gate drive compatibility with standard 10 V logic-level sources. Its thermal design centers on junction-to-mounting-base thermal resistance of 1.7 K/W, supporting direct heatsinking via the drain-connected mounting base.
The device features an integrated source-drain diode with 0.85 V forward voltage at 25 A and 40 ns reverse recovery time, and supports pulsed peak drain currents up to 139 A. Avalanche ruggedness is characterized under unclamped inductive switching conditions (ID = 14 A, Vsup ≤ 55 V, RGS = 50 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum - defines safe operating voltage ceiling for 12 V/24 V automotive bus applications with margin against transients. |
| ID (continuous) | 35 A at Tmb = 25 °C - enables high-current motor, lamp, and solenoid loads without external parallel devices. |
| RDS(on) | 30 mΩ typ at VGS = 10 V, ID = 20 A, Tj = 25 °C - minimizes conduction loss and self-heating during sustained operation. |
| EAS | 49 mJ non-repetitive avalanche energy - provides single-pulse inductive turn-off robustness in relay or motor coil driving. |
| Tj max | 175 °C - ensures functional reliability in under-hood environments and other high-temperature automotive locations. |
| Rth(j-mb) | 1.7 K/W - enables effective thermal coupling to heatsinks via the exposed drain-mounted base, critical for power density. |
| VGS(th) | 2–4 V at Tj = 25 °C - guarantees reliable turn-on with standard microcontroller GPIO or driver IC outputs. |
Pinout & Package
Package: D2PAK (SOT404), plastic surface-mount package with exposed drain-connected mounting base for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≥10 V for full enhancement; threshold range 2–4 V ensures compatibility with 3.3 V/5 V logic when derated. |
| 2 (D) | Drain | Main high-side power terminal; electrically connected to mounting base for low-inductance heatsinking and current return path. |
| 3 (S) | Source | Power return node; referenced to system ground in low-side switch configurations; carries full load current and diode reverse recovery charge. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical systems including engine control, body electronics, and ADAS power stages. |
| Low RDS(on) (30 mΩ typ) | Reduces I²R losses by >30% vs. legacy planar MOSFETs at same voltage class, lowering thermal stress in compact PCB layouts. |
| 175 °C junction rating | Supports uninterrupted operation in under-dash, under-hood, and transmission-control modules without derating at ambient >125 °C. |
| Drain-connected mounting base | Provides <1.7 K/W thermal path to heatsink, eliminating need for insulating pads and reducing thermal interface resistance by ~40%. |
| Unclamped avalanche rated (49 mJ) | Enables robust inductive load switching without external snubbers in solenoid and brushed DC motor drivers. |
Applications
| Automotive Body Control Module | 12 V/24 V DC Motor Driver |
|---|---|
|
Use Scenario: Switching door locks, seat adjusters, and HVAC actuators in modern BCMs. IC Role / Device Role / Timing Role: Low-side power switch controlling inductive solenoid coils with PWM duty cycles up to 100%. Use Value: AEC-Q101 qualification ensures long-term reliability across temperature cycling; 49 mJ avalanche energy absorbs coil flyback without clamping diodes. |
Use Scenario: Driving brushed DC fans, radiator cooling pumps, and power window motors. IC Role / Device Role / Timing Role: High-current, thermally robust main power switch in half-bridge or single-ended motor drive stage. Use Value: 35 A continuous current and 1.7 K/W Rth(j-mb) allow direct heatsink mounting, eliminating thermal bottlenecks in space-constrained modules. |
| LED Headlamp Power Stage | Industrial 24 V Load Distribution |
|
Use Scenario: High-side or low-side switching of multi-string LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: Constant-current load switch with fast turn-on/turn-off (10 ns td(on), 20 ns tf) for PWM dimming control. Use Value: Low 30 mΩ RDS(on) minimizes voltage drop and heat generation during 100% duty-cycle illumination phases. |
Use Scenario: Remote-controlled power distribution for sensors, valves, and actuators in factory automation panels. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in DIN-rail mounted PLC I/O modules. Use Value: 175 °C rating and AEC-Q101 robustness ensure stable operation in industrial enclosures with ambient temperatures up to 85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF06L | 60 V VDS, 36 A ID, 20 mΩ RDS(on), TO-220 package, no AEC-Q101 qualification | Lacks automotive qualification; higher RDS(on) margin but lower thermal resistance to ambient due to through-hole package | Select only for non-automotive industrial use where qualification is not required and board-level heatsinking is feasible. |
| IRF3205PBF | 55 V VDS, 110 A ID (pulsed), 8 mΩ RDS(on), TO-220AB, no AEC-Q101, higher gate charge (71 nC) | Higher peak current capability but significantly slower switching (tr = 120 ns) and unqualified for automotive environments | Preferable only in cost-sensitive, non-automotive high-pulse-current applications where gate drive strength permits. |
Compared with STP36NF06L and IRF3205PBF, BUK7635-55A trades some RDS(on) advantage for guaranteed automotive qualification, optimized thermal path via D2PAK mounting base, and proven avalanche ruggedness-making it the sole choice for production-grade automotive power nodes.
Availability
BUK7635-55A is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drives, and industrial load distribution systems requiring stable component supply and long-term lifecycle support.
Supply support for BUK7635-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK7635-55A belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for AEC-Q101-compliant, thermally constrained switching in 12 V/24 V vehicle electrical architectures.
FAQ
Is BUK7635-55A suitable for high-frequency PWM switching?
No-it is optimized for medium-speed power switching (e.g., motor control, lamp dimming), not RF or MHz-range SMPS. Its 62 ns rise time and 20 ns fall time support PWM frequencies up to ~20 kHz reliably; higher frequencies increase switching losses disproportionately due to gate charge (QG ≈ 45 nC) and output capacitance (Coss = 170–205 pF).
Can BUK7635-55A be used in high-side configuration?
Yes, but requires gate drive voltage ≥ VDS + VGS(th) (i.e., ≥57 V minimum for 55 V bus). Standard 12 V gate drivers cannot achieve this directly; a bootstrap or isolated gate driver is mandatory. Its standard-level gate threshold does not simplify high-side implementation.
What is the significance of the mounting base being connected to the drain?
The drain-connected mounting base serves dual functions: it provides the lowest possible thermal resistance path (1.7 K/W) to an external heatsink, and acts as the primary high-current drain terminal. This eliminates solder joint thermal bottlenecks and reduces parasitic inductance in high-di/dt switching, but mandates electrical isolation of the heatsink from system ground in low-side configurations.
Does BUK7635-55A include integrated ESD protection?
No-the device has no built-in ESD protection circuitry. Gate oxide withstands ±20 V per Absolute Maximum Ratings, but real-world handling and PCB layout require external TVS diodes or RC snubbers on gate traces. Nexperia recommends limiting gate trace length and adding 10 Ω series resistance plus 10 nF capacitor to ground near the gate pin for transient suppression.
BUK7635-55A,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 872 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 85W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK7635-55A,118 FAQ
1.How can I place an order for BUK7635-55A,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7635-55A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7635-55A,118 reliable?
The price and inventory of BUK7635-55A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7635-55A,118 is usually 5 days.
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6.How does Aetrix verify that BUK7635-55A,118 is sourced from the original manufacturer or authorized distributors?
All BUK7635-55A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7635-55A,118 meets industry standards.
7.What is the process for return or replacement of BUK7635-55A,118?
All BUK7635-55A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7635-55A,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7635-55A,118 part is unused and in its original packaging.
Return procedure for BUK7635-55A,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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