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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK763R1-60E,118

Name: BUK763R1-60E,118
Brand: Nexperia USA Inc.
SKU: BUK763R1-60E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK763R1-60E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK763R1-60E,118.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

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Product details

Overview

BUK763R1-60E from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in SOT404 (D2PAK) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 293 W total power dissipation. It features 2.34 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, AEC-Q101 qualification, and 175 °C junction temperature rating - deployed in automotive transmission control and start-stop micro-hybrid systems.

For engineers reviewing the BUK763R1-60E datasheet, BUK763R1-60E pinout, BUK763R1-60E application, or BUK763R1-60E equivalent, key selection criteria include its true standard-level gate (V_GS(th) > 1 V at 175 °C), repetitive avalanche rating, thermally robust 0.51 K/W R_th(j-mb), and suitability for high-current 12 V automotive switching where thermal derating and ruggedness are critical.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with Q_G(tot) = 114 nC and Q_GD = 34.8 nC at V_DS = 48 V. Its gate threshold remains functional up to 175 °C (V_GS(th) ≥ 1 V), enabling reliable turn-on in thermally demanding engine bay environments.

The device integrates a source-drain diode with 0.79 V forward voltage at 25 A and 42.1 ns reverse recovery time, supporting synchronous rectification and inductive load commutation. Mounting base (mb) is electrically connected to drain, requiring isolation-aware PCB layout and heatsink design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines use in 12 V automotive systems with load dump transients.
R_DS(on)	2.34 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 80 A, critical for thermal management.
I_D (cont)	120 A @ T_mb = 25 °C - Package-limited continuous current; derates to zero at T_mb ≈ 160 °C per Fig. 2.
E_AS	404 mJ non-repetitive avalanche energy - Supports unclamped inductive switching without failure under defined test conditions.
R_th(j-mb)	0.51 K/W - Junction-to-mounting-base thermal resistance; enables direct heatsink mounting for high-power dissipation.
Q_GD	34.8 nC - Gate-drain charge determining Miller plateau duration; impacts switching speed and gate driver sizing.
V_GS(th)	≥1 V @ T_j = 175 °C - Ensures guaranteed turn-on with standard 5 V or 12 V logic-level drivers across full temperature range.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; V_GS absolute max ±20 V.
2 (D)	Drain	Main high-side current path; internally bonded to mounting base (mb) - must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Power return and reference node; connects to internal source bond pads; LS = 7.5 nH impacts high-di/dt ringing.
mb	Mounting Base	Electrically tied to drain; primary thermal interface - requires thermal pad and solder coverage per IPC-7351B for R_th(j-mb) compliance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications including temperature cycling, humidity, and mechanical shock per AEC standard.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching events within SOA limits - supports robust motor control without external snubbers.
175 °C junction rating	Enables operation in engine compartment environments where ambient exceeds 125 °C; R_DS(on) increases only 2.4× from 25 °C to 175 °C.
True standard-level gate	V_GS(th) ≥ 1 V at 175 °C ensures compatibility with 5 V microcontrollers and 12 V body electronics without level-shifting.
Low Q_GD/Q_G ratio	34.8 nC / 114 nC = 0.305 - Reduces Miller-induced switching delay and improves controllability during hard-switching transitions.

Applications

Transmission Control Module

Start-Stop Micro-Hybrid System

Use Scenario: High-current solenoid actuation in automatic transmission valve bodies, switching 40–80 A loads at 12 V.

IC Role / Device Role / Timing Role: High-side power switch controlling hydraulic pressure via PWM at 1–10 kHz.

Use Value: 2.34 mΩ R_DS(on) minimizes resistive heating during sustained duty cycles; 175 °C rating prevents thermal shutdown during gear-shift surges.

Use Scenario: Starter motor engagement/disengagement and battery isolation in 12 V start-stop systems.

IC Role / Device Role / Timing Role: Bidirectional load switch managing cranking current (up to 120 A) and regenerative braking energy routing.

Use Value: Repetitive avalanche capability absorbs inductive kickback from starter relay coils; mounting base thermal path sustains peak currents without derating.

Engine Cooling Fan Driver

12 V Automotive Lighting Control

Use Scenario: PWM-controlled radiator fan motor (brushed DC, 30–60 A) mounted near hot exhaust manifolds.

IC Role / Device Role / Timing Role: Low-side switching element operating at 20–100 Hz with 100 % duty cycle capability.

Use Value: 0.51 K/W R_th(j-mb) allows direct bolt-down to aluminum heatsink; 175 °C rating maintains reliability at localized 150 °C ambient.

Use Scenario: Headlamp high-beam and fog lamp switching in modern LED+halogen architectures.

IC Role / Device Role / Timing Role: High-side switch enabling load-dump protected, short-circuit tolerant illumination control.

Use Value: V_DS = 60 V withstands ISO 7637-2 pulse 5a (±100 V); integrated source-drain diode handles inductive lamp coil flyback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, R_DS(on) = 1.6 mΩ @ 10 V, but requires gate drive ≥ 12 V for full enhancement; not AEC-Q101 qualified.	Higher current capacity suits larger fans or dual-solenoid modules; unsuitable for safety-critical AEC-compliant designs.	Select when higher peak current and lower R_DS(on) outweigh qualification requirements and gate drive constraints.
IRFB4115PBF	150 V, 110 A, R_DS(on) = 4.5 mΩ @ 10 V; TO-220AB package; AEC-Q101 not claimed; R_th(j-c) = 0.85 K/W.	Higher voltage margin supports 24 V commercial vehicle systems; larger package eases manual assembly but reduces power density.	Choose for 24 V platforms or prototyping where thermal interface flexibility and through-hole mounting are prioritized over automotive qualification.

Compared with STL220N6F7 and IRFB4115PBF, BUK763R1-60E uniquely balances AEC-Q101 compliance, 175 °C operation, and 2.34 mΩ on-resistance in a surface-mount D2PAK - making it optimal for production-grade 12 V automotive modules where qualification, thermal density, and gate drive simplicity are jointly required.

Availability

BUK763R1-60E is available at Aetrix Electronics and suitable for automotive transmission control, start-stop micro-hybrid systems, and engine cooling fan drivers requiring stable component supply across extended temperature and lifecycle demands.

Supply support for BUK763R1-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with core expertise in automotive-qualified power devices.

BUK763R1-60E belongs to Nexperia's TrenchMOS automotive power MOSFET product line, engineered specifically for thermally aggressive 12 V automotive subsystems requiring AEC-Q101 compliance, avalanche ruggedness, and high-current switching efficiency.

FAQ

What is the maximum continuous drain current for BUK763R1-60E at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 120 A - identical to the 25 °C rating - because Fig. 2 shows no derating until T_mb exceeds ~115 °C. This reflects the device's low R_th(j-mb) and robust thermal design, enabling full-rated current in high-ambient underhood locations.

Is the mounting base (mb) electrically isolated from the drain terminal?

No - the mounting base is internally connected to the drain (Pin 2), as confirmed in Table 2 and Fig. 17. This requires electrical isolation between the heatsink and all other system potentials unless the drain node is referenced to chassis ground. Failure to isolate may cause short circuits or ground loops.

Does BUK763R1-60E support gate drive from a 3.3 V microcontroller?

No - its V_GS(th) minimum is 1 V at 175 °C, but full enhancement (to achieve 2.34 mΩ R_DS(on)) requires V_GS ≥ 10 V. A 3.3 V signal cannot reliably turn the device on; a gate driver IC or level shifter is mandatory for logic-level control.

How does the source-drain diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.79 V at 25 A and t_rr = 42.1 ns - slower and higher VF than optimized Schottky diodes, but sufficient for freewheeling in solenoid and brushed motor applications. Its Q_r = 59.3 nC is manageable with proper snubber design, eliminating need for external diode in cost-sensitive automotive modules.

BUK763R1-60E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8920 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 293W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK763R1-60E,118 FAQ

1.How can I place an order for BUK763R1-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK763R1-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK763R1-60E,118 reliable?

The price and inventory of BUK763R1-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK763R1-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK763R1-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK763R1-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK763R1-60E,118?

BUK763R1-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK763R1-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK763R1-60E,118?

For technical support, including BUK763R1-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK763R1-60E,118 requirements.

6.How does Aetrix verify that BUK763R1-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK763R1-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK763R1-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK763R1-60E,118?

All BUK763R1-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK763R1-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK763R1-60E,118 part is unused and in its original packaging.

Return procedure for BUK763R1-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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