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Nexperia USA Inc. BUK763R4-30B,118

Part No.:
BUK763R4-30B,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK763R4-30B,118.pdf
Description:
MOSFET N-CH 30V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,331

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Product details

Overview

BUK763R4-30B,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in D2PAK (SOT404) package, designed for automotive-critical 12 V load switching. It delivers 75 A continuous drain current at Tmb = 25 °C, features 2.9 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, supports 175 °C junction operation, and provides 1.3 J non-repetitive avalanche energy - enabling robust control of motors, lamps, and solenoids in engine bays and chassis modules.

For engineers reviewing the BUK763R4-30B,118 datasheet, BUK763R4-30B,118 pinout, BUK763R4-30B,118 application, or BUK763R4-30B,118 equivalent, key selection criteria include its 30 V VDS, thermally rugged D2PAK mounting base, gate-drive compatibility with standard 10 V logic, and validated performance under automotive thermal cycling and unclamped inductive switching stress.

Technical Context

This device implements a trench-gate vertical DMOS structure optimized for low conduction loss and high avalanche ruggedness. Its gate threshold voltage (2–4 V at Tj = 25 °C) ensures reliable turn-on with standard microcontroller GPIOs, while the 75 nC total gate charge enables efficient switching at frequencies up to 100 kHz in PWM-driven loads.

The integrated source-drain diode exhibits 0.85 V forward voltage at 25 A and 25 °C, with 70 ns reverse recovery time and 58 nC recovered charge - supporting freewheeling in inductive circuits without external catch diodes in many 12 V automotive applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum drain-source voltage - defines safe operating ceiling for 12 V battery systems with load-dump transients.
ID (continuous) 75 A at Tmb = 25 °C - enables high-current switching of starter relays, HVAC blowers, and fuel pumps without external heatsinking.
RDS(on) 2.9 mΩ typical at VGS = 10 V, Tj = 25 °C - minimizes conduction loss (≤5.5 W at 75 A), reducing thermal stress in space-constrained modules.
EAS 1.3 J non-repetitive avalanche energy - sustains unclamped inductive turn-off events in solenoid and motor drives without failure.
Tj max 175 °C maximum junction temperature - allows operation in under-hood environments where ambient exceeds 125 °C.
Rth(j-mb) 0.59 K/W thermal resistance (junction-to-mounting base) - enables direct thermal coupling to PCB copper or heatsinks for stable power delivery.
QG(tot) 75 nC total gate charge - determines gate driver strength requirement (e.g., ≥1 A peak for 100 ns turn-on).

Pinout & Package

Package: D2PAK (SOT404), plastic surface-mounted package with isolated mounting base electrically connected to drain. Features three terminals: Gate (pin 1), Drain (pin 2 + mounting base), Source (pin 3).

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; requires 10 V drive for full enhancement; 2–4 V threshold enables TTL/CMOS compatibility.
2 (D) + mb Drain / Mounting Base Main high-side current path; mounting base serves as primary thermal interface and electrical connection to drain node.
3 (S) Source Return path for load current; referenced to ground in low-side switch configurations; hosts internal body diode cathode.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive safety-critical systems including engine control, braking, and ADAS power stages.
175 °C junction rating Enables uninterrupted operation in high-ambient zones (e.g., near exhaust manifolds or transmission housings).
Standard-level gate drive Operates fully enhanced with 10 V gate-source voltage - compatible with common MCU I/O and discrete driver ICs.
0.59 K/W Rth(j-mb) Allows >200 W dissipation with ≤120 K rise above heatsink temperature - simplifies thermal design in compact ECUs.
Integrated body diode 0.85 V VSD at 25 A supports freewheeling in brushed DC motor H-bridges without external diodes.

Applications

Engine Control Module (ECM) Fuel Pump Driver Brake-by-Wire Solenoid Actuator

Use Scenario: High-reliability on/off control of 12 V fuel pump under wide ambient (-40 °C to 150 °C) and vibration conditions.

IC Role / Device Role / Timing Role: Low-side power switch managing 40–60 A pulsed current during engine cranking and run phases.

Use Value: 1.3 J avalanche energy withstands back-EMF spikes from pump coil de-energization; 175 °C rating prevents thermal shutdown during extended idling.

Use Scenario: Precision current regulation for hydraulic brake solenoids requiring fast, repeatable actuation cycles.

IC Role / Device Role / Timing Role: High-speed switching element in PWM-controlled solenoid driver stage with <100 ns turn-off delay.

Use Value: 75 nC QG and 89 ns td(off) enable 20 kHz PWM control; 2.9 mΩ RDS(on) limits resistive heating during sustained 30 A hold current.

Body Control Module (BCM) Headlamp Relay Replacement Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Solid-state replacement of mechanical relays for LED headlamps, eliminating contact wear and bounce.

IC Role / Device Role / Timing Role: High-current (50–70 A) low-side switch handling inrush and steady-state load currents.

Use Value: 75 A continuous rating handles 60 A lamp inrush; D2PAK mounting base ensures stable thermal interface on thick-copper PCBs.

Use Scenario: Half-bridge leg in 12 V EPS motor driver, switching phase current up to 80 A peak during steering assist.

IC Role / Device Role / Timing Role: Power stage transistor in three-phase inverter topology, subjected to repetitive avalanche stress.

Use Value: 1.3 J EAS and 6.5 mΩ RDS(on) at 175 °C ensure reliability during regenerative braking and fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N3LLH6 30 V, 220 A rated, TO-263 package; lower RDS(on) (1.8 mΩ), higher gate charge (130 nC); not AEC-Q101 qualified. Targeted at industrial motor drives; lacks automotive qualification and thermal derating data for 175 °C operation. Select only for non-automotive 12 V high-current switching where qualification is not required.
IRF3205PBF 55 V, 110 A, TO-220 package; RDS(on) = 8.0 mΩ at 10 V; no automotive qualification; 175 °C rating not specified. General-purpose industrial use; unsuitable for automotive due to missing AEC-Q101 test reports and undefined high-temp reliability. Use only in cost-sensitive non-automotive designs where 30 V rating and thermal margin are not critical.

Compared with STL220N3LLH6 and IRF3205PBF, BUK763R4-30B,118 uniquely combines AEC-Q101 compliance, 175 °C operation, 2.9 mΩ conduction loss, and 1.3 J avalanche ruggedness in a thermally optimized D2PAK package - making it the only drop-in solution for safety-critical 12 V automotive power switching where qualification, thermal stability, and transient robustness are mandatory.

Availability

BUK763R4-30B,118 is available at Aetrix Electronics and suitable for automotive engine control, brake-by-wire actuation, and body electronics requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for BUK763R4-30B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

This device belongs to Nexperia's Automotive Logic and Power portfolio, engineered specifically for AEC-Q101-compliant power switching in 12 V vehicle architectures - emphasizing thermal resilience, avalanche robustness, and gate-drive simplicity.

FAQ

Is BUK763R4-30B,118 suitable for high-frequency PWM applications?

Yes - with 75 nC total gate charge and 89 ns turn-off delay, it supports PWM frequencies up to 100 kHz in thermally managed designs. Its 23 nC gate-drain charge and 630 pF Crss minimize Miller-induced shoot-through risk in half-bridge configurations when paired with appropriate gate drivers and layout practices.

What is the maximum allowable mounting base temperature for continuous 75 A operation?

Per Figure 1 in the datasheet, continuous 75 A operation is limited to Tmb ≤ 25 °C. At Tmb = 100 °C, the device supports 75 A only if pulse width is constrained per SOA curves; derating to ~45 A is required for DC operation at 100 °C mounting base temperature.

Does BUK763R4-30B,118 require a gate resistor for automotive EMI compliance?

Yes - a 10 Ω external gate resistor is recommended (per Figure 14 test conditions) to limit dV/dt and suppress ringing. This value balances switching speed (32 ns td(on)) with conducted EMI reduction, especially critical in CAN-bus proximity and infotainment-adjacent modules.

Can the mounting base be electrically isolated from the PCB ground plane?

No - the mounting base is internally connected to the drain terminal (pin 2). Isolation requires insulating hardware (e.g., ceramic washer, silicone pad) and careful creepage/clearance design. Direct soldering to a copper pour is standard practice for thermal performance, but that pour must be at drain potential.

BUK763R4-30B,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4951 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
255W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK763R4-30B,118 FAQ

1.How can I place an order for BUK763R4-30B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK763R4-30B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK763R4-30B,118 reliable?

The price and inventory of BUK763R4-30B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK763R4-30B,118 is usually 5 days.

3.What payment methods are accepted for BUK763R4-30B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK763R4-30B,118 transactions.

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4.How is shipping managed for BUK763R4-30B,118?

BUK763R4-30B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK763R4-30B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK763R4-30B,118?

For technical support, including BUK763R4-30B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK763R4-30B,118 requirements.

6.How does Aetrix verify that BUK763R4-30B,118 is sourced from the original manufacturer or authorized distributors?

All BUK763R4-30B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK763R4-30B,118 meets industry standards.

7.What is the process for return or replacement of BUK763R4-30B,118?

All BUK763R4-30B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK763R4-30B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK763R4-30B,118 part is unused and in its original packaging.

Return procedure for BUK763R4-30B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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