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Nexperia USA Inc. BUK763R6-40C,118

Part No.:
BUK763R6-40C,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK763R6-40C,118.pdf
Description:
MOSFET N-CH 40V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,706

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Product details

Overview

BUK763R6-40C from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive 12V power switching. It delivers 100 A continuous drain current at 25 °C mounting base temperature, 3.6 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and supports operation up to 175 °C junction temperature - enabling use in motor, lamp, and solenoid load control within high-reliability automotive systems.

For engineers reviewing the BUK763R6-40C datasheet, BUK763R6-40C pinout, BUK763R6-40C application, or BUK763R6-40C equivalent, key selection criteria include avalanche energy rating (292 mJ), thermal resistance to mounting base (0.74 K/W), gate charge profile (QG(tot) = 97 nC), and standard-level gate drive compatibility (VGS(th) = 2–4 V).

Technical Context

This device uses Nexperia's advanced TrenchMOS technology to achieve low on-resistance and robust avalanche performance. Its 40 V VDS rating, 100 A continuous current capability, and 203 W total power dissipation at Tmb = 25 °C are defined by package-limited thermal design with direct-mounting base thermal path.

The FET features a source-drain diode with 0.83–1.2 V forward voltage at 25 A and 25 °C, and exhibits fast switching dynamics: td(on) = 40 ns, tr = 95 ns, td(off) = 129 ns, tf = 92 ns under standard test conditions (VDS = 30 V, RG(ext) = 10 Ω).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum drain-source voltage - defines safe blocking capability in 12V automotive systems with transient overvoltage margin.
RDS(on) 3.6 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables low conduction loss in high-current PWM motor drivers.
ID (cont) 100 A continuous drain current at Tmb = 25 °C - limited by D2PAK package thermal capacity, not silicon die.
EAS 292 mJ non-repetitive avalanche energy - ensures ruggedness against inductive load turn-off transients without external snubbers.
Rth(j-mb) 0.74 K/W junction-to-mounting-base thermal resistance - enables efficient heat transfer to heatsink via metal mounting base.
QG(tot) 97 nC total gate charge - determines required gate driver peak current and switching loss in high-frequency PWM applications.
VGS(th) 2–4 V gate-source threshold voltage at 25 °C - compatible with standard 5 V or 12 V logic-level gate drive without level-shifting.

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); metal mounting base electrically connected to drain terminal for enhanced thermal and electrical performance.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; requires ≤20 V gate-source voltage; threshold centered at 3 V for standard-level drive compatibility.
2 (D) Drain Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path and thermal conduction.
3 (S) Source Power return node; forms common reference for gate drive and load current sensing; connects to PCB ground plane.
Mounting Base (mb) Drain Extension Electrically tied to drain; provides primary thermal interface to heatsink; reduces Rth(j-mb) to 0.74 K/W.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability across -55 °C to 175 °C operating range, including temperature cycling and humidity testing.
Avalanche robustness 292 mJ unclamped inductive switching energy handling - eliminates need for external clamping diodes in solenoid/motor drive circuits.
Standard-level gate drive VGS(th) = 2–4 V and full enhancement at 10 V - allows direct interfacing with microcontroller GPIO or automotive logic without gate drivers.
High-temperature operation Rated for continuous operation at Tj = 175 °C and Tstg = -55 to 175 °C - supports under-hood placement in engine control modules.
Low RDS(on) × QG figure-of-merit 3.6 mΩ × 97 nC = 349 mΩ·nC - balances conduction and switching losses for high-efficiency 10–100 kHz PWM applications.

Applications

Automotive Engine Control Module (ECM) 12V Electric Power Steering (EPS) Actuator

Use Scenario: Switching fuel injector solenoids and ignition coil primary windings in gasoline/diesel engines.

IC Role / Device Role / Timing Role: High-side power switch controlling inductive loads with precise pulse-width timing and fast turn-off to manage combustion timing.

Use Value: Avalanche energy rating (292 mJ) absorbs flyback energy during coil de-energization, eliminating discrete snubbers and reducing BOM count.

Use Scenario: Driving dual-phase brushed DC motors in EPS assist systems requiring bidirectional torque modulation.

IC Role / Device Role / Timing Role: Low-side half-bridge switch enabling PWM-controlled motor current with <100 ns fall time for responsive torque response.

Use Value: 3.6 mΩ RDS(on) minimizes I²R heating at 50–80 A peak currents, supporting continuous operation at 175 °C junction temperature.

Automotive HVAC Blower Motor Commercial Vehicle Lighting Control

Use Scenario: Regulating 12V blower fan speed via PWM in cabin climate control units.

IC Role / Device Role / Timing Role: High-current, thermally robust MOSFET operating in linear and switching modes for variable-speed fan control.

Use Value: 0.74 K/W Rth(j-mb) enables direct heatsink mounting, sustaining 100 A continuous current without derating in confined enclosures.

Use Scenario: Switching LED headlamp arrays and incandescent stop/tail lamps in trucks and buses.

IC Role / Device Role / Timing Role: Load switch managing inrush current and thermal stress during cold-start lamp energization.

Use Value: AEC-Q101 qualification ensures long-term reliability under vibration, thermal shock, and wide ambient temperature swings (-40 to +125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDS, 220 A ID, 1.7 mΩ RDS(on), but requires 4.5 V gate drive minimum; higher QG (130 nC). Better conduction efficiency at >150 A, but less suitable for space-constrained layouts due to larger H2PAK package. Select when higher current headroom and lower RDS(on) outweigh gate drive complexity and board area constraints.
IRF1404ZLPbF 40 V VDS, 184 A ID, 4.7 mΩ RDS(on), non-AEC-Q101; higher RDS(on) and no automotive qualification. Limited to industrial or non-safety-critical automotive after-market use; lacks avalanche energy spec and thermal derating validation. Consider only for cost-sensitive non-automotive applications where AEC-Q101 compliance and 292 mJ EAS are not required.

Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK763R6-40C offers optimal balance of AEC-Q101 compliance, 3.6 mΩ on-resistance, and 97 nC gate charge - making it preferred for space- and thermal-constrained automotive modules requiring guaranteed reliability and simplified gate drive.

Availability

BUK763R6-40C is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, HVAC blower systems, and commercial vehicle lighting requiring stable component supply and long-term lifecycle support.

Supply support for BUK763R6-40C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

The BUK763R6-40C belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust 12V load switching in harsh under-hood environments with emphasis on avalanche ruggedness and thermal stability.

FAQ

Is BUK763R6-40C suitable for high-frequency PWM above 50 kHz?

Yes - its 97 nC total gate charge, 35 nC gate-drain charge, and sub-100 ns switching times (tr = 95 ns, tf = 92 ns) support efficient operation up to 100 kHz in motor control applications. However, switching losses increase with frequency, so thermal design must account for combined conduction and switching dissipation at target duty cycle and load current.

What is the maximum allowable mounting base temperature for continuous 100 A operation?

The datasheet specifies 100 A continuous drain current at Tmb = 25 °C. As mounting base temperature rises, current must be derated per Figure 1: at Tmb = 100 °C, maximum continuous ID drops to 100 A (capped by package limit), and at Tmb = 125 °C, it falls to approximately 75 A. Derating curves are provided in the official datasheet Figure 1.

Does the mounting base require electrical isolation from the heatsink?

No - the mounting base is electrically connected to the drain terminal, so isolation is required if the heatsink is grounded or referenced to a different potential. Use electrically insulating thermal pads or ceramic washers with sufficient dielectric strength (>500 V) and thermal conductivity (>1.5 W/m·K) to maintain safety and performance.

Can BUK763R6-40C replace BUZ11 in legacy automotive designs?

Not directly - while both are N-channel 40 V MOSFETs, BUK763R6-40C has significantly lower RDS(on) (3.6 mΩ vs. ~50 mΩ for BUZ11), higher current rating (100 A vs. 30 A), and AEC-Q101 qualification. Layout, gate drive, and thermal management must be re-evaluated; the improved performance enables smaller heatsinks but demands attention to higher di/dt effects and gate ringing.

BUK763R6-40C,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
97 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5708 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
203W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK763R6-40C,118 FAQ

1.How can I place an order for BUK763R6-40C,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK763R6-40C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK763R6-40C,118 reliable?

The price and inventory of BUK763R6-40C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK763R6-40C,118 is usually 5 days.

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BUK763R6-40C,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK763R6-40C,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK763R6-40C,118?

For technical support, including BUK763R6-40C,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK763R6-40C,118 requirements.

6.How does Aetrix verify that BUK763R6-40C,118 is sourced from the original manufacturer or authorized distributors?

All BUK763R6-40C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK763R6-40C,118 meets industry standards.

7.What is the process for return or replacement of BUK763R6-40C,118?

All BUK763R6-40C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK763R6-40C,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK763R6-40C,118 part is unused and in its original packaging.

Return procedure for BUK763R6-40C,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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