Nexperia USA Inc. BUK763R8-80E,118

Overview

BUK763R8-80E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in SOT404 (D2PAK) package, rated for 80 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 3.1 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers ultra-low on-resistance with true standard-level gate drive (V_GS(th) > 1 V at 175 °C), enabling direct microcontroller interfacing in automotive power switching applications such as electric power steering and transmission control.

For engineers reviewing the BUK763R8-80E datasheet, BUK763R8-80E pinout, BUK763R8-80E application, or BUK763R8-80E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, 0.43 K/W R_th(j-mb), and compatibility with 12 V/24 V/48 V automotive systems requiring high-current, thermally robust switching.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining robust avalanche ruggedness (488 mJ non-repetitive E_AS) and stable threshold voltage across temperature (V_GS(th) = 1–4.5 V from −55 °C to 175 °C). Its gate charge profile (Q_G(tot) = 169 nC, Q_GD = 51 nC) supports fast, controlled switching in high-frequency PWM circuits.

The device integrates a monolithic source-drain diode with 0.77 V typical forward voltage at 25 A and 58 ns reverse recovery time, supporting synchronous rectification and freewheeling in motor drives. Mounting base (mb) is internally connected to drain, enabling low-inductance thermal and electrical paths via PCB copper pour.

Key Specifications

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is integral to the drain terminal and must be soldered to a large copper area for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N6F7 and IRFB4115PBF, BUK763R8-80E uniquely combines 80 V rating, AEC-Q101 compliance, 3.1 mΩ on-resistance, and D2PAK thermal performance - making it optimal for next-generation 48 V EPS and transmission control modules where efficiency, size, and qualification are jointly constrained.

Availability

BUK763R8-80E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission valve control requiring stable component supply across automotive production lifecycles.

Supply support for BUK763R8-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

BUK763R8-80E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally demanding, high-current automotive subsystems requiring AEC-Q101 compliance and long-term supply stability.

FAQ

Is BUK763R8-80E suitable for high-frequency PWM above 50 kHz?

Yes - with Q_GD = 51 nC and t_f = 65 ns, it supports efficient switching up to 100 kHz in motor control applications. However, total gate charge (Q_G(tot) = 169 nC) necessitates a gate driver capable of ≥2 A peak sink/source current to minimize switching losses at high frequency.

What is the maximum allowable PCB copper area for the mounting base?

No upper limit - larger copper areas reduce R_th(j-mb) below 0.43 K/W. For production designs, Nexperia recommends ≥10 cm² of 2 oz copper connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes to sustain 120 A continuous operation at T_mb ≤ 100 °C.

Does the source-drain diode support synchronous rectification?

Yes - the integrated body diode has t_rr = 58 ns and Q_r = 121 nC, enabling use in synchronous buck topologies at ≤50 kHz. However, its V_SD = 0.77 V at 25 A results in higher conduction loss than external Schottky diodes, so it is best applied in freewheeling or low-duty-cycle scenarios.

Can BUK763R8-80E replace BUZ72A in existing designs?

No - BUZ72A is a TO-220 packaged 100 V, 12 A device with 0.3 Ω R_DS(on). BUK763R8-80E offers 40× lower on-resistance and 10× higher current, but requires complete PCB layout redesign due to SOT404 footprint, mounting base soldering, and gate drive current scaling. It is not a drop-in replacement.