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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK763R9-60E,118

Name: BUK763R9-60E,118
Brand: Nexperia USA Inc.
SKU: BUK763R9-60E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK763R9-60E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK763R9-60E,118.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

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Product details

Overview

BUK763R9-60E from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in SOT404 (D2PAK) package, rated for 60 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 263 W total power dissipation. It features 2.94 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, AEC-Q101 qualification, and 175 °C junction temperature rating - deployed in automotive start-stop micro-hybrid systems for high-current load switching.

For engineers reviewing the BUK763R9-60E datasheet, BUK763R9-60E pinout, BUK763R9-60E application, or BUK763R9-60E equivalent, key selection criteria include its true standard-level gate (V_GS(th) > 1 V at 175 °C), repetitive avalanche capability, thermally robust 0.57 K/W R_th(j-mb), and suitability for 12 V automotive power distribution where high pulse current (706 A peak) and low conduction loss are critical.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low R_DS(on) while maintaining ruggedness under repetitive avalanche stress. Its gate threshold voltage remains functional up to 175 °C, enabling reliable turn-on in thermally demanding engine-bay environments without requiring gate boosting circuitry.

The device integrates a source-drain diode with 39 ns reverse recovery time and 51 nC recovered charge, supporting synchronous rectification and freewheeling in inductive load control. Mounting base (drain-connected) thermal path enables direct heatsink attachment for high-power operation in transmission control modules and motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V maximum - supports full 12 V automotive system transients including load dump (up to ISO 7637-2 Pulse 5a).
R_DS(on)	2.94 mΩ typ @ V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 60 A, reducing thermal burden in compact ECUs.
I_D cont.	100 A @ T_mb = 25 °C - limited by package; usable up to 100 A with proper PCB copper area and heatsinking.
E_AS	372 mJ non-repetitive avalanche energy - protects against inductive kickback during solenoid or motor coil de-energization.
R_th(j-mb)	0.57 K/W - allows efficient heat transfer from die to heatsink via mounting base, critical for sustained high-current operation.
Q_GD	33 nC - low gate-drain charge improves switching efficiency and reduces Miller-induced shoot-through risk in half-bridge topologies.
T_j max	175 °C - qualified per AEC-Q101 for under-hood use without derating in ambient temperatures up to 125 °C.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level control input; V_GS(th) > 1 V at 175 °C ensures reliable turn-on with 5 V or 3.3 V MCU GPIOs in hot environments.
2 (D)	Drain	Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current path and thermal conduction.
3 (S)	Source	Power return node; referenced to ground in low-side switch configurations; forms source-drain body diode anode.
mb	Mounting Base	Electrically tied to drain; provides mechanical attachment and primary thermal path to heatsink - must be soldered to large copper pour or external heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and ADAS subsystems per stress test requirements.
Repetitive avalanche rated	Withstands repeated inductive energy spikes without degradation - eliminates need for external snubbers in lamp/motor drive circuits.
True standard-level gate	V_GS(th) ≥ 1 V at 175 °C ensures gate drive compatibility with standard logic-level MCUs without level-shifting or gate drivers.
175 °C junction rating	Enables operation in high-ambient zones (e.g., near exhaust manifolds or battery packs) with full electrical performance retention.
Low Q_GD/Q_G ratio	33 nC / 103 nC ≈ 0.32 - improves hard-switching efficiency and reduces gate drive power in 20–100 kHz PWM applications.

Applications

Start-Stop Micro-Hybrid Control

Automotive Transmission Solenoid Drive

Use Scenario: Switching high-current starter motor engagement/disengagement during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling 80–100 A inrush current to starter relay coil and pre-charge circuits.

Use Value: 372 mJ avalanche energy rating absorbs coil back-EMF without clamping diodes; 0.57 K/W R_th(j-mb) sustains repeated 500 ms pulses at 100 A with <120 °C T_j.

Use Scenario: Driving electro-hydraulic transmission solenoids requiring precise 12 V, 5–15 A pulsed current with fast turn-off.

IC Role / Device Role / Timing Role: Low-side switching element in solenoid driver stage, handling PWM frequencies up to 5 kHz.

Use Value: 39 ns t_rr and 51 nC Q_r minimize switching losses and diode conduction time during flyback; 2.94 mΩ R_DS(on) limits steady-state heating.

12 V Automotive Lighting Control

Engine Cooling Fan Power Stage

Use Scenario: On/off and PWM dimming of high-intensity LED headlamps and matrix lighting modules drawing up to 40 A.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch placed between battery and LED string, operating at 100–500 Hz PWM.

Use Value: 100 A I_D rating accommodates surge currents during cold LED startup; 175 °C T_j rating prevents thermal shutdown during prolonged full-brightness operation.

Use Scenario: Controlling brushless DC cooling fans in engine compartments where ambient exceeds 105 °C.

IC Role / Device Role / Timing Role: High-side power switch in fan H-bridge or single-phase drive, managing 30–60 A continuous loads.

Use Value: Repetitive avalanche capability handles inductive flyback during abrupt fan stop; V_GS(th) > 1 V at 175 °C ensures stable gate control without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, 1.6 mΩ R_DS(on), DFN5x6 package; no AEC-Q101 qualification; higher current but lower thermal resistance to PCB only.	Preferred for space-constrained industrial motor drives; unsuitable for automotive qualification-critical designs.	Select when board-level heatsinking suffices and AEC-Q101 is not required; avoid in safety-critical automotive modules.
IRF1404ZPBF	40 V, 184 A, 3.8 mΩ R_DS(on), TO-220AB; AEC-Q101 not claimed; lower V_DS rating limits use to ≤14 V systems.	Used in legacy 12 V chassis systems with less stringent transient immunity; lacks 60 V margin for load dump protection.	Acceptable for cost-sensitive non-automotive 12 V switching; reject for new automotive designs requiring ISO 7637-2 compliance.

Compared with STL220N6F7 and IRF1404ZPBF, BUK763R9-60E uniquely balances AEC-Q101 compliance, 60 V transient margin, and 0.57 K/W junction-to-mounting-base thermal resistance - making it the only choice for thermally dense, qualification-mandated automotive power stages where reliability under repeated thermal and electrical stress is non-negotiable.

Availability

BUK763R9-60E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and engine cooling fan modules requiring stable component supply across extended production lifecycles.

Supply support for BUK763R9-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

BUK763R9-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where AEC-Q101 reliability and thermal resilience are mandatory.

FAQ

Is BUK763R9-60E suitable for high-frequency PWM switching above 100 kHz?

No - its 103 nC total gate charge and 33 nC gate-drain charge result in higher switching losses above 50 kHz. It is optimized for 1–20 kHz motor/solenoid control and DC load switching, not RF or resonant converters. For >100 kHz, consider Nexperia's NextPower series with lower Q_G and Q_GD.

Can BUK763R9-60E be used in a high-side configuration with 12 V gate drive?

Yes - its standard-level gate (V_GS(th) > 1 V at 175 °C) and 20 V maximum V_GS rating allow direct 12 V gate drive from automotive MCUs or dedicated high-side drivers. No level shifter is needed, but gate resistor must limit peak current during fast switching.

What is the maximum allowable mounting base temperature for continuous 100 A operation?

Per Figure 2 in the datasheet, 100 A continuous current is only sustainable at T_mb ≤ 25 °C. At T_mb = 100 °C, maximum continuous current drops to ~55 A. Derating must follow the normalized curve in Fig. 2; sustained 100 A requires active heatsinking to maintain T_mb < 30 °C.

Does the source-drain diode support synchronous rectification in buck converters?

It can be used for freewheeling, but its 39 ns t_rr and 51 nC Q_r are higher than dedicated Schottky or SiC diodes. In 12 V buck converters above 200 kHz, reverse recovery losses may exceed 1 W - use only in low-frequency (<50 kHz), high-current applications where body diode conduction is unavoidable.

BUK763R9-60E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 263W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK763R9-60E,118 FAQ

1.How can I place an order for BUK763R9-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK763R9-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK763R9-60E,118 reliable?

The price and inventory of BUK763R9-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK763R9-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK763R9-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK763R9-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK763R9-60E,118?

BUK763R9-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK763R9-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK763R9-60E,118?

For technical support, including BUK763R9-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK763R9-60E,118 requirements.

6.How does Aetrix verify that BUK763R9-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK763R9-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK763R9-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK763R9-60E,118?

All BUK763R9-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK763R9-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK763R9-60E,118 part is unused and in its original packaging.

Return procedure for BUK763R9-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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