Nexperia USA Inc. BUK764R0-75C,118
- Part No.:
- BUK764R0-75C,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK764R0-75C,118.pdf
- Description:
- MOSFET N-CH 75V 100A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:9,588
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Product details
Overview
BUK764R0-75C,118 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 75 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 3.4 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and is engineered for high-reliability automotive power switching of 12 V motor, lamp, and solenoid loads under thermally demanding conditions.
For engineers reviewing the BUK764R0-75C,118 datasheet, BUK764R0-75C,118 pinout, BUK764R0-75C,118 application, or BUK764R0-75C,118 equivalent, this device is selected for its avalanche robustness (630 mJ unclamped), standard-level gate drive compatibility (VGS(th) = 2–4 V), and thermal performance (Rth(j-mb) = 0.45 K/W) in automotive PWM and load-switching designs.
Technical Context
This FET uses advanced TrenchMOS technology to achieve low on-resistance and high avalanche energy capability. Its gate threshold voltage (2–4 V at Tj = 25 °C) ensures reliable turn-on with standard 10 V gate drivers, while its 175 °C maximum junction temperature supports operation in engine bay environments without derating.
The device features a monolithic source-drain diode with 0.85–1.2 V forward voltage and 83 ns reverse recovery time, enabling efficient freewheeling in inductive switching. Its dynamic parameters-including 142 nC total gate charge and 67 nC gate-drain charge-support predictable PWM timing in high-frequency automotive control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; enables use in 12 V automotive systems with transient overvoltage margin. |
| RDS(on) | 3.4 mΩ (typ.) at VGS = 10 V, Tj = 25 °C - Low conduction loss supports <1 W dissipation at 50 A, reducing heatsink requirements. |
| ID (cont) | 100 A at Tmb = 25 °C - High current capability meets peak demand in starter relays and HVAC blower motors. |
| EAS | 630 mJ (unclamped) - Avalanche ruggedness allows safe operation during inductive load turn-off without external snubbers. |
| Rth(j-mb) | 0.45 K/W - Low junction-to-mounting-base thermal resistance enables direct PCB copper pad cooling in space-constrained modules. |
| QG(tot) | 142 nC - Gate charge value determines required driver current for <150 ns turn-on/turn-off times in 20 kHz PWM applications. |
| VGS(th) | 2–4 V at Tj = 25 °C - Standard-level threshold ensures compatibility with 5 V or 3.3 V microcontroller GPIOs via level-shifting or buffer stages. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; requires ≥100 mA peak current to charge 142 nC gate capacitance within 1 µs. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current path and thermal conduction. |
| 3 (S) | Source | Power return and reference node; connects to ground plane; internal source inductance (7.5 nH) impacts switching ringing in fast PWM. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability across -55 °C to +175 °C operating range, including temperature cycling and humidity testing. |
| Avalanche robustness | 630 mJ non-repetitive energy rating enables fault-tolerant operation during load dump or inductive kickback without failure. |
| Thermal rating | 175 °C maximum junction temperature allows sustained operation in under-hood environments without thermal shutdown. |
| Standard gate drive | 2–4 V VGS(th) ensures compatibility with common 5 V MCU outputs and eliminates need for dedicated high-side gate drivers. |
| Low RDS(on) × QG figure-of-merit | 3.4 mΩ × 142 nC = 483 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 10–50 kHz automotive PWM. |
Applications
| Engine Cooling Fan Control | Automotive Headlamp Switching |
|---|---|
|
Use Scenario: PWM-controlled 12 V DC brushless fan in engine compartment with ambient up to 125 °C. IC Role / Device Role / Timing Role: High-side power switch regulating fan speed via 25 kHz duty-cycle modulation. Use Value: 3.4 mΩ RDS(on) limits conduction loss to <0.9 W at 50 A, while 630 mJ avalanche rating absorbs back-EMF during abrupt stop commands. |
Use Scenario: On/off and dimming control of LED headlamps using high-side switching topology. IC Role / Device Role / Timing Role: Load switch managing up to 15 A peak current per channel with fast (<200 ns) turn-on/turn-off transitions. Use Value: 142 nC gate charge enables clean edge control with standard 1 A gate drivers; 175 °C rating ensures stability during prolonged high-brightness operation. |
| Transmission Solenoid Driver | Starter Relay Replacement |
|
Use Scenario: Driving 12 V hydraulic solenoids in automatic transmission valve bodies with pulsed 100 ms ON cycles. IC Role / Device Role / Timing Role: Robust power switch handling repetitive 100 A inrush currents and inductive flyback. Use Value: Avalanche ruggedness prevents failure during repeated coil de-energization; 0.45 K/W Rth(j-mb) allows direct copper pad mounting for minimal thermal resistance. |
Use Scenario: Solid-state replacement for mechanical starter relay in 12 V cranking circuits with >200 A peak demands. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch delivering cranking pulses with <10 µs delay and minimal voltage drop. Use Value: 100 A continuous rating and 797 A peak drain current support cold-cranking surges; D2PAK package withstands vibration and thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, 0.75 mΩ RDS(on), PowerFLAT 5x6 package | Limited to 12 V systems with lower transient margin; higher current but lower voltage rating than BUK764R0-75C,118 | Select when higher current density and smaller footprint are prioritized over 75 V surge tolerance. |
| IRF1404ZLPbF | 40 V VDS, 180 A ID, 3.8 mΩ RDS(on), TO-220AB package | Non-automotive grade (no AEC-Q101), larger through-hole package, no avalanche rating specified | Use only in non-safety-critical industrial 12 V loads where qualification and thermal performance are secondary. |
Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK764R0-75C,118 uniquely combines 75 V rating, AEC-Q101 qualification, and 630 mJ avalanche energy-making it the only option qualified for high-transient automotive power switching where reliability and surge immunity are mandatory.
Availability
BUK764R0-75C,118 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and ADAS power distribution systems requiring stable component supply and long-term lifecycle assurance.
Supply support for BUK764R0-75C,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.
This part belongs to Nexperia's Automotive TrenchMOS portfolio, designed specifically for robust, high-current switching in 12 V and 48 V vehicle electrical architectures-emphasizing thermal resilience, avalanche safety, and AEC-Q101 compliance.
FAQ
Is BUK764R0-75C,118 suitable for high-frequency PWM above 50 kHz?
No-its 142 nC total gate charge and 133 ns rise time make it optimized for 10–25 kHz automotive PWM (e.g., fan control, solenoid actuation). At >50 kHz, switching losses increase significantly due to gate drive power demand and internal inductance effects; lower-QG FETs like PMT270UN are better suited.
Can BUK764R0-75C,118 be used in a high-side configuration with 12 V supply?
Yes-it supports standard-level gate drive and is commonly deployed in high-side switching with a dedicated gate driver (e.g., NCV8402) that provides VGS ≥ 10 V referenced to the source. The mounting base (drain) must be isolated from heatsink if floating, or grounded if used as low-side.
What is the maximum allowable PCB copper area for thermal performance?
For optimal Rth(j-mb) = 0.45 K/W, the datasheet specifies a minimum 100 mm² copper pad (2-layer, 70 µm thick) directly under the mounting base. Increasing to 200 mm² reduces thermal resistance by ~15%, but further gains diminish without forced airflow or thermal vias to inner layers.
Does BUK764R0-75C,118 include integrated ESD protection?
No-the device has no built-in ESD protection circuitry. External TVS diodes (e.g., PESD5V0S1BA) are required on gate and drain terminals to meet ISO 10605 and IEC 61000-4-2 standards in automotive harness environments.
BUK764R0-75C,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 142 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11659 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 333W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK764R0-75C,118 FAQ
1.How can I place an order for BUK764R0-75C,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK764R0-75C,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BUK764R0-75C,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK764R0-75C,118 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK764R0-75C,118?
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6.How does Aetrix verify that BUK764R0-75C,118 is sourced from the original manufacturer or authorized distributors?
All BUK764R0-75C,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK764R0-75C,118 meets industry standards.
7.What is the process for return or replacement of BUK764R0-75C,118?
All BUK764R0-75C,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK764R0-75C,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK764R0-75C,118 part is unused and in its original packaging.
Return procedure for BUK764R0-75C,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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