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Nexperia USA Inc. BUK764R2-80E,118

Name: BUK764R2-80E,118
Brand: Nexperia USA Inc.
SKU: BUK764R2-80E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK764R2-80E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK764R2-80E,118.pdf

Description:: MOSFET N-CH 80V 120A D2PAK

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Product details

Overview

BUK764R2-80E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in SOT404 (D2PAK) package, rated for 80 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 3.1 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers ultra-low on-resistance with true standard-level gate drive (V_GS(th) > 1 V at 175 °C), enabling direct microcontroller interfacing in automotive power switching.

For engineers reviewing the BUK764R2-80E datasheet, BUK764R2-80E pinout, BUK764R2-80E application, or BUK764R2-80E equivalent, this device is selected for thermally demanding 12V/24V/48V automotive systems requiring repetitive avalanche capability, 175 °C junction operation, and high-current motor/solenoid control without external level shifting.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining robustness under high dv/dt and repetitive avalanche stress. Its gate threshold voltage remains functional up to 175 °C, supporting reliable turn-on in engine bay environments where thermal derating of logic-level devices typically fails.

The device integrates a monolithic source-drain diode with 49.2 ns reverse recovery time and 95 nC recovered charge, enabling efficient freewheeling in inductive load switching. Thermal resistance from junction to mounting base is 0.46 K/W, allowing high-power dissipation when mounted on copper-clad PCBs or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48V automotive systems with margin against load dump transients.
I_D (continuous)	120 A at T_mb = 25 °C - Package-limited current; enables high-power solenoid or motor driver stages without parallel devices.
R_DS(on)	3.1 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Low conduction loss; <0.9 W dissipation at 15 A, reducing heatsink requirements.
Q_GD	39.4 nC - Gate-drain charge determines Miller plateau duration; enables predictable 80.9 ns turn-off delay for EMI-controlled switching.
T_j max	175 °C - Junction temperature rating qualified per AEC-Q101; allows operation in under-hood locations without forced cooling.
E_AS	384 mJ - Non-repetitive avalanche energy; protects against inductive kickback in transmission control or EPS without snubbers.
R_th(j-mb)	0.46 K/W - Thermal resistance to mounting base; enables ~700 W peak power handling with 100 K ΔT to heatsink.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level input; requires ≥10 V for full enhancement; V_GS(th) > 1 V even at 175 °C ensures reliable turn-on across full automotive temperature range.
2 (D)	Drain	Main high-side switching node; internally bonded to mounting base for low-inductance, high-current return path and thermal conduction.
3 (S)	Source	Power ground reference; internal source bond wires limit parasitic inductance to 7.5 nH, reducing voltage overshoot during fast turn-off.
Mounting base (mb)	Drain connection / thermal interface	Electrically tied to drain; provides mechanical attachment and primary heat transfer path to heatsink or PCB copper area.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and humidity testing-ensures reliability in safety-critical EPS and transmission modules.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching events up to 384 mJ, eliminating need for external avalanche clamps in motor drivers.
175 °C junction operation	Guaranteed functionality at maximum junction temperature-supports placement near engines or inverters without thermal throttling.
True standard-level gate	V_GS(th) > 1 V at 175 °C enables direct drive from 3.3 V or 5 V MCUs without gate drivers in low-speed applications.
Low Q_GD/Q_G ratio	39.4 nC / 136 nC ≈ 0.29 - Reduces Miller effect, improving switching controllability and reducing risk of spurious turn-on in high-dv/dt environments.

Applications

Electric Power Steering (EPS)

Start-Stop Micro-Hybrid Systems

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: Main N-channel high-side switch in three-phase inverter bridge; handles 80–100 A peak currents with <1 µs dead-time control.

Use Value: 3.1 mΩ R_DS(on) minimizes conduction loss at 12V bus, while 175 °C rating prevents thermal shutdown during sustained assist events.

Use Scenario: Starter motor engagement/disengagement and battery management in 12V start-stop systems with frequent cranking cycles.

IC Role / Device Role / Timing Role: High-current load switch controlling starter solenoid or bidirectional DC-DC converter primary side.

Use Value: Repetitive avalanche ruggedness absorbs inductive energy from solenoid coil collapse without external protection, extending system lifetime.

Transmission Control Valves

48V Mild Hybrid Auxiliary Loads

Use Scenario: PWM-driven electro-hydraulic pressure control valves in automatic transmissions operating continuously at elevated oil temperatures.

IC Role / Device Role / Timing Role: Low-side switch modulating valve coil current at 1–5 kHz; must survive 175 °C junction temperature during prolonged duty cycles.

Use Value: Stable V_GS(th) > 1 V at 175 °C ensures consistent turn-on timing and prevents shoot-through in half-bridge configurations.

Use Scenario: Power switching for 48V auxiliary loads including HVAC compressors, active suspension actuators, and DC-DC converters in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck or boost stages; handles 40–60 A continuous with minimal thermal rise.

Use Value: 0.46 K/W R_th(j-mb) enables direct mounting to aluminum chassis, achieving <50 °C temperature rise at 50 A with passive cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	80 V, 220 A, 2.2 mΩ @ 10 V, TSDFN8 package; lower R_DS(on) but requires gate driver due to 4.5 V V_GS(th).	Better conduction efficiency at high current, but unsuitable for direct MCU drive; needs layout space for driver IC and decoupling.	Select when peak efficiency > gate simplicity; verify thermal interface compatibility with TSDFN8 footprint.
IRFB4115PBF	150 V, 110 A, 5.8 mΩ @ 10 V, TO-220AB; higher voltage rating but higher R_DS(on) and larger thermal resistance (0.75 K/W).	Used in legacy 24V industrial systems; lacks AEC-Q101 qualification and 175 °C rating.	Acceptable only for non-automotive or non-safety-critical 24V applications where qualification is not required.

Compared with STL220N4LF8AG and IRFB4115PBF, BUK764R2-80E uniquely balances standard-level gate drive, AEC-Q101 compliance, and 3.1 mΩ conduction loss in a thermally optimized D2PAK package-making it optimal for new automotive designs prioritizing MCU integration, thermal robustness, and qualification assurance.

Availability

BUK764R2-80E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK764R2-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK764R2-80E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems such as steering, braking, and powertrain control.

FAQ

Is BUK764R2-80E suitable for direct drive from a 3.3 V microcontroller?

No. While its V_GS(th) exceeds 1 V at 175 °C, full enhancement requires V_GS ≥ 10 V to achieve 3.1 mΩ R_DS(on). A 3.3 V MCU cannot provide sufficient gate overdrive; a gate driver or level shifter is mandatory for low-loss operation. At 3.3 V, R_DS(on) exceeds 100 mΩ, causing excessive heating.

What is the maximum safe continuous current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is capped at 120 A regardless of mounting base temperature due to package limitation. However, derating begins above 25 °C: at T_mb = 100 °C, the practical continuous current is approximately 75 A to maintain T_j ≤ 175 °C with adequate thermal margin.

Does BUK764R2-80E include an integrated body diode, and what are its recovery characteristics?

Yes-it features a monolithic source-drain diode with 49.2 ns reverse recovery time (t_rr) and 95 nC recovered charge (Q_r) at I_S = 20 A, dI_S/dt = −100 A/µs, and V_DS = 25 V. This fast, soft-recovery diode supports efficient freewheeling in inductive switching without external Schottky supplementation.

How is the mounting base (mb) electrically connected, and what PCB layout considerations apply?

The mounting base is internally connected to the drain terminal and serves as both electrical node and primary thermal path. For optimal performance, it must be soldered to a large copper pour (≥ 10 cm²) or heatsink with thermal vias. Avoid isolating the mb pad-doing so increases R_th(j-mb) by >3× and risks thermal runaway under high current.

BUK764R2-80E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 136 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10426 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 324W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK764R2-80E,118 FAQ

1.How can I place an order for BUK764R2-80E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK764R2-80E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK764R2-80E,118 reliable?

The price and inventory of BUK764R2-80E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK764R2-80E,118 is usually 5 days.

3.What payment methods are accepted for BUK764R2-80E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK764R2-80E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK764R2-80E,118?

BUK764R2-80E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK764R2-80E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK764R2-80E,118?

For technical support, including BUK764R2-80E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK764R2-80E,118 requirements.

6.How does Aetrix verify that BUK764R2-80E,118 is sourced from the original manufacturer or authorized distributors?

All BUK764R2-80E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK764R2-80E,118 meets industry standards.

7.What is the process for return or replacement of BUK764R2-80E,118?

All BUK764R2-80E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK764R2-80E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK764R2-80E,118 part is unused and in its original packaging.

Return procedure for BUK764R2-80E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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