NXP Semiconductors BUK764R3-40B,118

Overview

BUK764R3-40B from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in D2PAK (SOT404) package, designed for automotive 12 V load switching. It delivers 75 A continuous drain current at T_mb = 25 °C, features 4.3 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, and supports junction temperatures up to 175 °C - enabling robust operation in engine bay and body control modules.

For engineers reviewing the BUK764R3-40B datasheet, BUK764R3-40B pinout, BUK764R3-40B application, or BUK764R3-40B equivalent, this page provides verified specifications, thermal performance data, gate drive compatibility notes, avalanche energy rating (961 mJ), and validated alternatives for automotive power switching design-in.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-state resistance while maintaining standard-level gate drive compatibility (V_GS(th) = 2–4 V, max gate voltage ±20 V). Its 40 V V_DS rating and 75 A package-limited continuous current make it suitable for 12 V automotive systems where high-current loads require thermally resilient switching.

The device integrates a source-drain diode with 0.85–1.2 V forward voltage at 25 A and exhibits 68 ns reverse recovery time. Its thermal resistance from junction to mounting base is 0.59 K/W, enabling efficient heatsinking in compact automotive PCB layouts without forced airflow.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK764R3-40B offers the unique combination of AEC-Q101 compliance, 175 °C operation, and standard 10 V gate drive - making it the only qualified option for thermally demanding automotive body and engine control functions without gate voltage overhead.

Availability

BUK764R3-40B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V motor drives, lighting systems, and solenoid actuation requiring stable component supply and long-term lifecycle assurance.

Supply support for BUK764R3-40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK764R3-40B belongs to Nexperia's TrenchMOS automotive-qualified PowerMOS family, engineered specifically for high-reliability 12 V load switching in harsh thermal and electrical environments.

FAQ

What is the maximum continuous drain current for BUK764R3-40B at 100 °C mounting base temperature?

The BUK764R3-40B supports 75 A continuous drain current at T_mb = 100 °C, as specified in Table 4 (Limiting Values) of the datasheet. This value is package-limited and remains constant across T_mb = 25 °C to 100 °C, with further derating beyond that point per Figure 1. The BUK764R3-40B maintains stable conduction performance in thermally constrained automotive locations such as fuse boxes or ECU enclosures.

Is BUK764R3-40B suitable for use with 5 V microcontroller GPIOs without a gate driver?

No - the BUK764R3-40B is a standard-level MOSFET with V_GS(th) = 2–4 V and requires 10 V gate drive for full enhancement and minimal R_DS(on). At 5 V, R_DS(on) increases significantly (see Figure 6), causing excessive conduction loss and thermal risk. A gate driver or level shifter is required when using 5 V controllers. The BUK764R3-40B is optimized for 10 V gate sources like automotive 12 V rails or dedicated driver ICs.

Does BUK764R3-40B have integrated avalanche protection, and what is its rated energy?

Yes - the BUK764R3-40B is rated for 961 mJ non-repetitive drain-source avalanche energy (E_DS(AL)S) under defined test conditions (I_D = 75 A, V_sup ≤ 40 V, R_GS = 50 Ω, T_j(init) = 25 °C, unclamped). This ruggedness enables reliable inductive load switching in automotive applications without external clamping components. The BUK764R3-40B leverages TrenchMOS process stability to sustain repeated avalanche events within datasheet limits.

What is the thermal resistance from junction to mounting base for BUK764R3-40B, and how does it impact heatsinking?

The BUK764R3-40B has R_th(j-mb) = 0.59 K/W (max), measured from silicon junction to the exposed mounting base (pin 2/drain). This low value allows direct mechanical and thermal attachment to an external heatsink, enabling >200 W power dissipation with modest ΔT. In practice, the BUK764R3-40B achieves full 254 W P_tot only when the mounting base is actively cooled; passive PCB copper alone yields ~40 W. Proper thermal interface material and mounting pressure are essential for achieving the rated R_th.

Can BUK764R3-40B be used in high-frequency PWM applications above 100 kHz?

Yes - the BUK764R3-40B has Q_G(tot) = 69 nC and fast switching times (t_d(on) = 27 ns, t_f = 65 ns), supporting PWM frequencies up to 200 kHz in well-designed gate drive circuits. However, switching losses increase significantly above 100 kHz due to Q_GD = 22 nC and C_iss = 3618–4824 pF. For optimal efficiency at high frequency, minimize gate loop inductance and use a 1–2 Ω series gate resistor. The BUK764R3-40B remains thermally viable in such applications when R_DS(on) dominates conduction loss and layout minimizes dynamic loss contributors.