Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK764R4-60E,118

Part No.:
BUK764R4-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK764R4-60E,118.pdf
Description:
MOSFET N-CH 60V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,768

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK764R4-60E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It features 3.23 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, repetitive avalanche rating, and AEC-Q101 qualification for automotive power switching.

For engineers reviewing the BUK764R4-60E datasheet, BUK764R4-60E pinout, BUK764R4-60E application, or BUK764R4-60E equivalent, this device is selected for high-current, thermally demanding 12 V automotive loads where gate drive simplicity (standard-level VGS(th) > 1 V at 175 °C), ruggedness, and package thermal performance are critical.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low RDS(on) and high current density in a surface-mount D2PAK package with integrated mounting base connected to drain. Its true standard-level gate enables direct drive from 5 V or 3.3 V microcontrollers without level-shifting, while maintaining threshold stability up to 175 °C.

The device supports unclamped inductive switching with 273 mJ single-pulse avalanche energy and exhibits low dynamic parameters: 26.1 nC QGD, 82 nC QG(tot), and 39 ns tr, enabling efficient high-frequency PWM control in motor and solenoid drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage for 12 V automotive systems with load-dump margin
RDS(on) 3.23 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 50 A
ID cont. 100 A @ Tmb = 25 °C - Limited by package thermal capacity, not silicon
Ptot 234 W @ Tmb = 25 °C - High power handling enabled by low Rth(j-mb) = 0.64 K/W
VGS(th) 1 V min @ Tj = 175 °C - Ensures reliable turn-on with standard logic-level gate drivers under worst-case thermal stress
EAS 273 mJ - Supports robust operation in inductive switching without external snubbers
QGD 26.1 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge topologies

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with isolated leads and integral copper mounting base electrically connected to drain. The mounting base provides low-thermal-resistance path to heatsink (Rth(j-mb) = 0.64 K/W).

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts standard-level logic drive (VGS(th) > 1 V at 175 °C); requires <82 nC total gate charge
2 D (Drain) Main power output terminal; internally bonded to mounting base for thermal and electrical connection to heatsink
3 S (Source) Power return path; referenced to gate drive ground; source inductance LS = 7.5 nH affects switching ringing
mb Mounting Base Electrically tied to drain; primary thermal interface; must be soldered to PCB copper pour or heatsink for rated power dissipation

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC-Q101 Rev G
Repetitive avalanche rated Rated for repeated inductive switching events without degradation; supports robust motor commutation
175 °C maximum junction temperature Enables operation in engine bay and transmission control modules without derating in ambient up to 125 °C
True standard-level gate VGS(th) ≥ 1 V at Tj = 175 °C ensures turn-on compatibility with 3.3 V/5 V MCUs without gate driver ICs
Low Rth(j-mb) 0.64 K/W thermal resistance enables 234 W power dissipation with minimal ΔT between junction and heatsink

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-current engagement of starter motor solenoid during micro-hybrid engine restart cycles.

IC Role / Device Role / Timing Role: Power switch controlling 12 V solenoid coil with 100 A peak inrush and repetitive 50 ms pulses.

Use Value: Repetitive avalanche rating absorbs inductive kickback; 175 °C rating sustains reliability during under-hood thermal transients.

Use Scenario: Precision PWM control of hydraulic pressure solenoids in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: High-side switch delivering 5–20 A DC or 1–5 kHz PWM current to proportional solenoids.

Use Value: Low 3.23 mΩ RDS(on) minimizes self-heating at sustained 15 A; fast 39 ns rise time enables accurate duty-cycle fidelity.

12 V Electric Power Steering (EPS) Automotive HVAC Blower Motor

Use Scenario: Bidirectional H-bridge phase leg in EPS motor driver for torque assist and damping control.

IC Role / Device Role / Timing Role: Low-side switch handling 60 A continuous and 620 A pulsed currents during emergency maneuvers.

Use Value: 620 A peak drain current rating supports short-circuit fault conditions; low QGD reduces cross-conduction risk in bridge layout.

Use Scenario: High-efficiency speed control of 12 V DC blower motors in cabin climate systems.

IC Role / Device Role / Timing Role: Single-ended switch modulating motor current via PWM at 20–25 kHz to suppress acoustic noise.

Use Value: 26.1 nC QGD and 82 nC QG(tot) enable low gate-drive power loss; 175 °C rating accommodates sealed motor housing temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V, but requires 10 V gate drive; no AEC-Q101 certification Higher current capability but unsuitable for automotive qualification-critical designs Select only for non-automotive industrial motor drives where gate drive voltage ≥ 10 V is available
IRFB4115PBF 150 V, 115 A, RDS(on) = 4.5 mΩ @ 10 V; TO-220 package; AEC-Q101 not claimed Higher voltage margin but larger footprint and higher RDS(on); lacks mounting base thermal path Choose when 150 V breakdown is required or when through-hole assembly is mandated

Compared with STL220N6F7 and IRFB4115PBF, BUK764R4-60E uniquely combines AEC-Q101 compliance, standard-level gate drive, and D2PAK thermal performance-making it optimal for space-constrained, thermally aggressive automotive power stages where qualification and ease of drive are mandatory.

Availability

BUK764R4-60E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, electric power steering modules, and HVAC blower drivers requiring stable component supply across extended vehicle lifecycles.

Supply support for BUK764R4-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

BUK764R4-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V automotive power switching where AEC-Q101 compliance and thermal robustness are non-negotiable.

FAQ

Is BUK764R4-60E suitable for high-frequency PWM applications above 100 kHz?

Yes - with 39 ns rise time, 40 ns fall time, and 26.1 nC QGD, it supports efficient switching up to 200 kHz in hard-switched topologies. However, gate drive strength must deliver ≥2 A peak current to fully exploit these dynamics, and PCB layout must minimize source inductance (LS = 7.5 nH) to prevent oscillation.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is capped at 100 A even at Tmb = 100 °C due to package limitation - not silicon derating. This reflects the thermal saturation of the D2PAK copper leadframe and mounting base, not junction temperature limits.

Can BUK764R4-60E be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) (normalized factor rises with Tj, Fig. 12) enables inherent current sharing. For stable paralleling, match gate drive loop inductance and use individual gate resistors (≥5 Ω) to damp oscillations; ensure identical PCB copper area and heatsinking per device.

Does the mounting base require electrical isolation from the heatsink?

No - the mounting base is electrically connected to the drain terminal (Pin 2). If the heatsink is grounded, a dielectric insulator (e.g., mica washer + thermal grease) is mandatory. Alternatively, use an isolated heatsink or design the mechanical mount to avoid unintended drain-to-chassis shorts.

BUK764R4-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6230 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
234W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK764R4-60E,118 FAQ

1.How can I place an order for BUK764R4-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK764R4-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK764R4-60E,118 reliable?

The price and inventory of BUK764R4-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK764R4-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK764R4-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK764R4-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK764R4-60E,118?

BUK764R4-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK764R4-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK764R4-60E,118?

For technical support, including BUK764R4-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK764R4-60E,118 requirements.

6.How does Aetrix verify that BUK764R4-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK764R4-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK764R4-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK764R4-60E,118?

All BUK764R4-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK764R4-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK764R4-60E,118 part is unused and in its original packaging.

Return procedure for BUK764R4-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK764R4-60E,118 Tags

  • BUK764R4-60E,118
  • BUK764R4-60E,118 PDF
  • BUK764R4-60E,118 Datasheet
  • BUK764R4-60E,118 Specifications
  • BUK764R4-60E,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK764R4-60E,118
  • Buy BUK764R4-60E,118
  • BUK764R4-60E,118 Price
  • BUK764R4-60E,118 Distributor
  • BUK764R4-60E,118 Supplier
  • BUK764R4-60E,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER