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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK765R2-40B,118

Name: BUK765R2-40B,118
Brand: Nexperia USA Inc.
SKU: BUK765R2-40B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK765R2-40B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK765R2-40B,118.pdf

Description:: MOSFET N-CH 40V 75A D2PAK

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Product details

Overview

BUK765R2-40B from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive-critical 12 V power switching. It delivers 75 A continuous drain current at T_mb = 25 °C, features 4.4 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 175 °C junction operation, and is AEC-Q101 qualified for under-hood motor, lamp, and solenoid control.

For engineers reviewing the BUK765R2-40B datasheet, BUK765R2-40B pinout, BUK765R2-40B application, or BUK765R2-40B equivalent, key selection criteria include its 40 V V_DS rating, thermally robust mounting-base thermal path (R_th(j-mb) = 0.74 K/W), avalanche energy capability (494 mJ), and compatibility with standard 10 V gate drive sources in automotive power distribution systems.

Technical Context

This FET employs trench-gate MOSFET architecture optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (V_GS(th)) ranges from 1 V to 4.4 V across -55 °C to 175 °C, enabling reliable turn-on with standard logic-level drivers while maintaining noise immunity.

The device integrates an intrinsic body diode with 0.85–1.2 V forward voltage at 25 A and exhibits 54 ns reverse recovery time, supporting synchronous rectification and inductive load commutation. Its 52 nC total gate charge and 16 nC gate-drain charge support efficient PWM control up to several hundred kHz in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe operating range for 12 V automotive battery systems with load dump transients.
I_D (continuous)	75 A at T_mb = 25 °C - limited by D2PAK package thermal capacity, not silicon die.
R_DS(on)	4.4 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 50 A, critical for thermal management.
E_AS	494 mJ non-repetitive avalanche energy - allows safe clamping of inductive kickback from motors/solenoids without external snubbers.
T_j max	175 °C - enables operation in high-ambient under-hood locations without derating below full current.
R_th(j-mb)	0.74 K/W - low thermal resistance to mounting base enables direct heatsink attachment for high-power dissipation.
Q_G(tot)	52 nC - determines gate driver current requirement and switching loss in PWM applications.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts standard 10 V logic-level drive; threshold voltage 2–4 V ensures robust turn-on with automotive microcontrollers.
2 (D)	Drain	Main power input; internally connected to mounting base - requires isolation from PCB ground plane and direct heatsink interface.
3 (S)	Source	Power return path and reference for gate drive; low-inductance source bond pad (L_S = 7.5 nH) minimizes switching oscillation.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive safety-critical applications including engine control, transmission, and chassis modules.
175 °C junction rating	Enables uninterrupted operation in under-hood ambient temperatures exceeding 125 °C without current derating.
Standard-level gate drive	Operates fully enhanced with 10 V gate-source voltage - compatible with common automotive MCU GPIOs and discrete driver ICs.
Low R_DS(on) × Q_G figure-of-merit	~217 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor drive stages.
Integrated avalanche ruggedness	494 mJ E_AS supports unclamped inductive switching in relay replacement and solenoid control without external protection.

Applications

Engine Cooling Fan Control

Headlamp Beam Switching

Use Scenario: PWM-controlled 12 V brushed DC fan delivering >200 W airflow in engine bay.

IC Role / Device Role / Timing Role: High-side power switch handling bidirectional current during active freewheeling and regenerative braking phases.

Use Value: 4.4 mΩ R_DS(on) limits conduction loss to <0.5 W at 10 A, while 175 °C rating prevents thermal shutdown during sustained 85 °C ambient operation.

Use Scenario: Digital switching between low-beam and high-beam halogen lamps in adaptive lighting systems.

IC Role / Device Role / Timing Role: Low-inductance power switch enabling <100 ns turn-off for precise beam transition timing and EMI control.

Use Value: 56 ns fall time and 7.5 nH source inductance minimize voltage overshoot during lamp de-energization, reducing relay contact arcing.

Transmission Solenoid Driver

Electric Power Steering (EPS) Motor Phase

Use Scenario: 12 V proportional current control of hydraulic pressure solenoids in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: Precision current-regulated switch operating in linear mode during transient pressure ramping.

Use Value: 9.9 mΩ R_DS(on) at 175 °C ensures stable on-resistance over full temperature range, enabling accurate current feedback calibration.

Use Scenario: Half-bridge high-side switch in 12 V EPS motor inverter driving brushless DC assist motor.

IC Role / Device Role / Timing Role: Fast-switching power stage component handling 30–50 A peak phase currents with minimal dead-time distortion.

Use Value: 16 nC Q_GD and 52 nC Q_G(tot) enable clean 20 kHz PWM edge transitions, reducing torque ripple and audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A rated, 1.8 mΩ R_DS(on), D²PAK package, AEC-Q101 qualified	Higher current capability and lower R_DS(on) but larger footprint and higher gate charge (120 nC)	Preferred when system requires >100 A continuous current or sub-2 mΩ conduction loss; requires stronger gate driver.
IRF1404ZLPbF	40 V, 180 A, 3.8 mΩ R_DS(on), TO-220AB package, not AEC-Q101 qualified	Lower cost, through-hole mounting, no automotive qualification, higher R_th(j-a)	Suitable for non-automotive industrial 12 V loads where AEC compliance and surface-mount assembly are not required.

Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK765R2-40B offers optimal balance of AEC-Q101 compliance, D2PAK thermal performance (0.74 K/W), and moderate gate drive demand (52 nC), making it ideal for space-constrained, thermally demanding automotive modules where qualification and reliability are mandatory.

Availability

BUK765R2-40B is available at Aetrix Electronics and suitable for automotive power distribution, engine control subsystems, and electric power steering requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BUK765R2-40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

The BUK765R2-40B belongs to Nexperia's Automotive Logic-Level Power MOSFET product line, engineered specifically for robust 12 V automotive power switching where AEC-Q101 qualification, thermal resilience, and gate-drive compatibility are mandatory.

FAQ

Is BUK765R2-40B suitable for high-side switching configurations?

Yes - its D2PAK package features a mounting base electrically tied to the drain, enabling straightforward high-side implementation with isolated gate drive. The 20 V maximum gate-source voltage and 4.4 V V_GS(th) max ensure reliable turn-on when referenced to the switched rail, and its 494 mJ avalanche rating protects against inductive transients during load disconnection.

What is the recommended PCB layout for thermal performance?

Maximize copper area under the mounting base using ≥2 oz copper and multiple thermal vias (≥8×0.3 mm) connecting to an internal or external heatsink plane. Keep source and gate traces short and wide to minimize L_S and gate loop inductance. Avoid solder mask over the mounting base pad to ensure optimal thermal interface with the heatsink.

Does BUK765R2-40B require a gate resistor for automotive PWM operation?

Yes - a 10 Ω external gate resistor is specified in the datasheet for switching characterization (td(on)/td(off), tr/tf). This value damps gate ringing, controls di/dt during turn-on/off, and prevents shoot-through in half-bridge configurations. For 20 kHz PWM in EPS applications, 10–22 Ω provides optimal trade-off between switching loss and EMI.

How does R_DS(on) vary over temperature and current?

R_DS(on) increases with junction temperature: 4.4 mΩ at 25 °C rises to 9.9 mΩ at 175 °C (2.25× increase), per Figure 12. At fixed temperature, it remains stable across 1–75 A due to trench MOSFET channel design - Figure 11 shows <5% variation from 10 A to 40 A at 25 °C, ensuring predictable conduction loss in dynamic loads.

BUK765R2-40B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3789 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 203W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK765R2-40B,118 FAQ

1.How can I place an order for BUK765R2-40B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK765R2-40B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK765R2-40B,118 reliable?

The price and inventory of BUK765R2-40B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK765R2-40B,118 is usually 5 days.

3.What payment methods are accepted for BUK765R2-40B,118?

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4.How is shipping managed for BUK765R2-40B,118?

BUK765R2-40B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK765R2-40B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK765R2-40B,118?

For technical support, including BUK765R2-40B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK765R2-40B,118 requirements.

6.How does Aetrix verify that BUK765R2-40B,118 is sourced from the original manufacturer or authorized distributors?

All BUK765R2-40B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK765R2-40B,118 meets industry standards.

7.What is the process for return or replacement of BUK765R2-40B,118?

All BUK765R2-40B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK765R2-40B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK765R2-40B,118 part is unused and in its original packaging.

Return procedure for BUK765R2-40B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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