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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK765R3-40E,118

Name: BUK765R3-40E,118
Brand: Nexperia USA Inc.
SKU: BUK765R3-40E,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK765R3-40E,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK765R3-40E,118.pdf

Description:: MOSFET N-CH 40V 75A D2PAK

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Product details

Overview

BUK765R3-40E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 40 V V_DS, 75 A continuous drain current at T_mb = 25 °C, 4.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to AEC-Q101 for automotive use in thermally demanding environments up to 175 °C junction temperature.

For engineers reviewing the BUK765R3-40E datasheet, BUK765R3-40E pinout, BUK765R3-40E application, or BUK765R3-40E equivalent, this device is selected for high-current 12 V automotive power switching where repetitive avalanche capability, true standard-level gate drive (>1 V V_GS(th) at 175 °C), and low thermal resistance (1.09 K/W R_th(j-mb)) are critical.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with Q_G(tot) = 43.6 nC and Q_GD = 14.8 nC at V_DS = 32 V, enabling efficient operation in hard-switched DC-DC and motor control topologies. Its gate threshold voltage remains functional across -55 °C to 175 °C, with V_GS(th) ≥ 1 V even at maximum junction temperature.

The device integrates a robust body diode with t_rr = 25.3 ns and Q_r = 19 nC, supporting synchronous rectification and freewheeling in start-stop micro-hybrid systems. Mounting base (mb) is electrically connected to drain, requiring isolation-aware PCB layout and thermal interface design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive battery rail with surge margin
I_D (continuous)	75 A at T_mb = 25 °C - Package-limited current handling for high-power solenoid/motor drivers
R_DS(on)	4.2 mΩ typ at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, reducing heatsink requirements
Q_GD	14.8 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves EMI behavior
R_th(j-mb)	1.09 K/W - Enables direct mounting to chassis or heatsink for high-power dissipation up to 137 W
E_AS	131 mJ - Non-repetitive avalanche energy rating supports unclamped inductive turn-off in transmission control
V_GS(th)	≥1 V at T_j = 175 °C - Ensures reliable turn-on with standard 5 V or 12 V gate drivers under worst-case thermal conditions

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤20 V absolute max gate-source voltage; standard-level drive compatible with 5 V/12 V logic
2 (D)	Drain	Main power output terminal; internally bonded to mounting base (mb) - must be isolated from PCB ground plane
3 (S)	Source	Power return path; referenced to gate drive circuit; source inductance LS = 7.5 nH impacts switching speed
mb	Mounting Base	Electrically tied to drain; primary thermal interface - requires thermal pad and solder paste for optimal heat transfer

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing per AEC standard
Repetitive avalanche rating	Rated for repeated unclamped inductive switching events without degradation - critical for transmission solenoid drivers
175 °C junction rating	Enables operation in engine bay or near powertrain modules without derating in ambient >125 °C environments
True standard-level gate	V_GS(th) ≥ 1 V at 175 °C ensures compatibility with legacy 5 V microcontrollers and avoids need for level-shifting gate drivers
Low R_DS(on) × Q_G figure of merit	4.2 mΩ × 43.6 nC = 183 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V power stages

Applications

12 V Automotive Power Distribution

Motors & Solenoids Control

Use Scenario: High-side switching in battery disconnect units and junction box modules for 12 V vehicle networks.

IC Role / Device Role / Timing Role: Main power switch controlling load current up to 75 A with fast turn-on/turn-off for fault isolation.

Use Value: 40 V V_DS rating accommodates load dump transients; 1.09 K/W R_th(j-mb) enables compact thermal design without forced air cooling.

Use Scenario: Driving brushed DC motors and fuel injector solenoids in engine management systems.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode for freewheeling current during PWM commutation.

Use Value: 25.3 ns t_rr and 19 nC Q_r minimize diode recovery losses; 131 mJ E_AS withstands inductive kickback during abrupt current interruption.

Start-Stop Micro-Hybrid Systems

Transmission Control Modules

Use Scenario: Controlling starter motor engagement and regenerative braking energy routing in 12 V stop-start architectures.

IC Role / Device Role / Timing Role: High-current bidirectional power switch managing cranking and energy recovery paths.

Use Value: 75 A continuous rating supports peak cranking loads; 175 °C operation ensures stability during extended idling with high underhood temperatures.

Use Scenario: Shifting solenoid actuation and hydraulic pressure control in automatic and dual-clutch transmissions.

IC Role / Device Role / Timing Role: Precision current-controlled switch delivering accurate pulse-width modulated current to transmission solenoids.

Use Value: Tight R_DS(on) tolerance (4.2–4.9 mΩ) ensures consistent solenoid force across temperature; AEC-Q101 qualification guarantees long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 1.8 mΩ R_DS(on), TO-263 package, 175 °C rated, AEC-Q101	Higher current capacity but larger footprint and higher gate charge (Q_G = 120 nC)	Preferred when system requires >75 A continuous current and board space allows TO-263; less suitable for space-constrained D2PAK layouts
IRF1404ZLPbF	40 V, 180 A, 3.8 mΩ R_DS(on), TO-220AB package, non-AEC-Q101, 175 °C rated	Lacks automotive qualification; higher R_DS(on) tempco and no repetitive avalanche rating	Acceptable for cost-sensitive industrial 12 V switching where AEC-Q101 compliance and avalanche ruggedness are not required

Compared with STL220N4F7AG and IRF1404ZLPbF, BUK765R3-40E offers optimal balance of D2PAK form factor, AEC-Q101 assurance, and low Q_GD/R_DS(on) for thermally constrained automotive modules requiring repeatable reliability over 15-year service life.

Availability

BUK765R3-40E is available at Aetrix Electronics and suitable for 12 V automotive power distribution, start-stop micro-hybrid control, and transmission solenoid actuation requiring stable component supply across multi-year production cycles.

Supply support for BUK765R3-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading semiconductor manufacturer specializing in high-performance, high-reliability discrete and logic devices, with core expertise in automotive-qualified power semiconductors and advanced packaging.

BUK765R3-40E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V vehicle systems where AEC-Q101 compliance, thermal robustness, and avalanche ruggedness are mandatory.

FAQ

Is BUK765R3-40E suitable for high-side switching configurations?

Yes - its standard-level gate threshold (≥1 V at 175 °C) and 40 V V_DS rating support high-side use with bootstrap or charge-pump gate drivers in 12 V systems. However, the mounting base is tied to drain, so PCB layout must isolate the thermal pad from ground planes and ensure proper gate drive referencing.

What is the maximum allowable mounting base temperature for continuous 75 A operation?

Per Figure 2 in the datasheet, continuous 75 A operation is only possible at T_mb ≤ 25 °C. At T_mb = 100 °C, the rated continuous current drops to approximately 45 A due to thermal derating - actual usable current must be determined by thermal simulation accounting for R_th(j-mb) = 1.09 K/W and system heatsink performance.

Does BUK765R3-40E have a specified gate plateau voltage?

Yes - the gate threshold voltage V_GS(th) is specified as 2.4–4.0 V at T_j = 25 °C and 1–? V at T_j = 175 °C (min ≥1 V). The gate plateau occurs near 4.5 V, as shown in Figure 14's gate charge curve, where Q_GS ≈ 9.3 nC and Q_GD ≈ 14.8 nC define the Miller region.

Can the internal source inductance (LS = 7.5 nH) impact switching performance in high-frequency PWM?

Yes - LS contributes to voltage overshoot during turn-off and slows effective gate drive loop response. In 20–100 kHz motor control, it increases switching losses by ~5–8 % versus idealized models; layout optimization (short source traces, Kelvin source connection) is recommended to mitigate its effect on dI/dt control and EMI.

BUK765R3-40E,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 35.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2772 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 137W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK765R3-40E,118 FAQ

1.How can I place an order for BUK765R3-40E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK765R3-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK765R3-40E,118 reliable?

The price and inventory of BUK765R3-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK765R3-40E,118 is usually 5 days.

3.What payment methods are accepted for BUK765R3-40E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK765R3-40E,118 transactions.

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4.How is shipping managed for BUK765R3-40E,118?

BUK765R3-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK765R3-40E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK765R3-40E,118?

For technical support, including BUK765R3-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK765R3-40E,118 requirements.

6.How does Aetrix verify that BUK765R3-40E,118 is sourced from the original manufacturer or authorized distributors?

All BUK765R3-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK765R3-40E,118 meets industry standards.

7.What is the process for return or replacement of BUK765R3-40E,118?

All BUK765R3-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK765R3-40E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK765R3-40E,118 part is unused and in its original packaging.

Return procedure for BUK765R3-40E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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