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Nexperia USA Inc. BUK766R0-60E,118
- Part No.:
- BUK766R0-60E,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK766R0-60E,118.pdf
- Description:
- MOSFET N-CH 60V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,534
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Product details
Overview
BUK766R0-60E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It features 4.58 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, and is AEC-Q101 qualified for automotive power switching.
For engineers reviewing the BUK766R0-60E datasheet, BUK766R0-60E pinout, BUK766R0-60E application, or BUK766R0-60E equivalent, this device is selected for high-current, thermally demanding 12 V automotive loads where repetitive avalanche capability, true standard-level gate drive (>1 V VGS(th) at 175 °C), and low conduction loss are critical.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low RDS(on) while maintaining robust thermal performance and AEC-Q101 qualification. Its gate threshold voltage remains functional up to 175 °C, enabling reliable operation in engine bay environments without requiring elevated gate drive.
The device integrates a source-drain diode with 0.84 V typical forward voltage at 25 A and 25 °C, and supports unclamped single-pulse avalanche energy of 196 mJ - critical for inductive load switching in transmission control and start-stop systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines use in 12 V automotive systems with load dump protection margin. |
| ID (continuous) | 75 A at Tmb = 25 °C - Package-limited current handling; requires heatsinking for sustained operation above ambient. |
| RDS(on) | 4.58 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 25 A, reducing thermal stress in motor/solenoid drivers. |
| QGD | 20 nC - Gate-drain charge determines switching speed and Miller plateau duration; impacts EMI and gate driver sizing. |
| Rth(j-mb) | 0.82 K/W - Junction-to-mounting-base thermal resistance; enables direct thermal coupling to heatsink for high-power dissipation. |
| VGS(th) | 1 V min @ Tj = 175 °C - Ensures turn-on compatibility with standard 5 V or 12 V logic-level microcontrollers without level-shifting. |
| EAS | 196 mJ - Non-repetitive avalanche energy rating; allows safe interruption of inductive currents (e.g., solenoids, fuel injectors) without external snubbers. |
Pinout & Package
SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - Controls channel conduction; requires ≤20 V DC rating and low-impedance drive for fast switching. |
| 2 | D | Drain - High-side or low-side power switch node; electrically tied to mounting base for thermal and electrical continuity. |
| 3 | S | Source - Return path for load current; referenced to gate drive ground in low-side configurations. |
| mb | Mounting Base | Drain-connected thermal interface - Must be soldered to copper pour or heatsink to maintain Tj ≤ 175 °C under full load. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock per AEC standard. |
| Repetitive avalanche rating | Rated for repeated inductive switching events without degradation - essential for transmission solenoid and starter motor control. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C. |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures turn-on with common 5 V/12 V MCU outputs - eliminates need for gate drivers in many applications. |
| Low RDS(on) × QG figure-of-merit | 62 nC total gate charge with 4.58 mΩ RDS(on) balances switching loss and conduction loss for high-efficiency 12 V power stages. |
Applications
| Engine Start-Stop Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: Switching high-current solenoids during automatic engine restart in micro-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch controlling 30–50 A solenoid coils with <100 µs turn-off to prevent hydraulic lag. Use Value: 196 mJ avalanche energy absorbs inductive kickback without snubber, and 175 °C rating sustains operation near hot exhaust manifolds. |
Use Scenario: Driving electro-hydraulic pressure control valves in 8-speed automatic transmissions. IC Role / Device Role / Timing Role: High-duty-cycle PWM switch operating at 1–10 kHz with precise current regulation. Use Value: 4.58 mΩ RDS(on) limits conduction loss to <4 W at 30 A, reducing thermal footprint on compact transmission control modules. |
| 12 V Motor Load Switching | Automotive Lamp Dimming |
|
Use Scenario: Controlling radiator cooling fans, HVAC blowers, and power seat motors in modern 12 V architectures. IC Role / Device Role / Timing Role: High-current, low-frequency switching element with overcurrent and thermal fault tolerance. Use Value: 75 A continuous rating supports peak fan loads up to 900 W, and AEC-Q101 qualification ensures 15-year field life in harsh vibration environments. |
Use Scenario: PWM dimming of LED headlamps and interior lighting with analog current control. IC Role / Device Role / Timing Role: Precision current sink in constant-current LED driver topology with fast transient response. Use Value: 20 nC QGD enables clean 1–20 kHz PWM edges, minimizing audible noise and EMI in sensitive lighting circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 1.8 mΩ RDS(on), TO-220FP package; higher current but larger footprint and no AEC-Q101 rating. | Designed for industrial motor drives, not automotive-qualified; lacks 175 °C thermal rating and avalanche ruggedness data. | Select only for non-automotive, space-tolerant designs needing lower RDS(on) and higher peak current. |
| IRF1405PBF | 55 V, 169 A, 5.3 mΩ RDS(on), TO-220AB; legacy planar MOSFET, no AEC-Q101, 175 °C rating not guaranteed. | Used in legacy 12 V power supplies and UPS systems; lacks repetitive avalanche spec and automotive thermal cycling validation. | Acceptable for cost-sensitive industrial prototypes, but not for production automotive systems requiring long-term reliability. |
Compared with STL220N6F7 and IRF1405PBF, BUK766R0-60E trades some current capacity for AEC-Q101 compliance, 175 °C operation, and documented avalanche ruggedness - making it the only viable choice for safety-critical automotive power switching where qualification and thermal margin are mandatory.
Availability
BUK766R0-60E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and 12 V body electronics requiring stable component supply across extended product lifecycles.
Supply support for BUK766R0-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive and industrial power management.
BUK766R0-60E belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for thermally aggressive 12 V automotive subsystems requiring AEC-Q101 compliance and robust avalanche performance.
FAQ
Is BUK766R0-60E suitable for high-side switching configurations?
No - the mounting base is internally connected to the drain terminal, making high-side layout challenging without isolation. It is optimized for low-side switching where the source connects to ground and the mounting base attaches directly to the heatsink. For high-side use, a dedicated high-side driver IC with floating supply is required, and thermal design must account for elevated reference potential.
What is the maximum allowable PCB copper area for thermal performance?
Thermal performance scales with copper area: ≥1000 mm² of 2 oz copper on the mounting base pad reduces Rth(j-a) from 50 K/W to ~15 K/W. The datasheet specifies minimum footprint values, but optimal heatsinking uses ≥2000 mm² with thermal vias to inner layers. Mounting base solder coverage must exceed 90% to avoid void-induced thermal resistance spikes.
Does BUK766R0-60E require a gate resistor for automotive EMI compliance?
Yes - a 5 Ω external gate resistor is recommended per Figure 3 test conditions to limit dV/dt and suppress ringing during switching. This value balances EMI reduction with acceptable turn-on/turn-off times (td(on) = 19 ns, tf = 34 ns). Lower values increase EMI risk; higher values degrade efficiency and thermal performance under PWM operation.
Can BUK766R0-60E replace older D2PAK MOSFETs like BUZ70 in automotive designs?
Yes - it offers improved RDS(on) (4.58 mΩ vs. ~10 mΩ), AEC-Q101 qualification, and 175 °C rating versus BUZ70's 150 °C limit. However, gate charge is higher (62 nC vs. ~45 nC), so gate driver strength must be verified. Layout changes may be needed due to tighter thermal requirements and avalanche energy handling differences.
BUK766R0-60E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 182W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK766R0-60E,118 FAQ
1.How can I place an order for BUK766R0-60E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK766R0-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK766R0-60E,118 reliable?
The price and inventory of BUK766R0-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK766R0-60E,118 is usually 5 days.
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4.How is shipping managed for BUK766R0-60E,118?
BUK766R0-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK766R0-60E,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK766R0-60E,118?
For technical support, including BUK766R0-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK766R0-60E,118 requirements.
6.How does Aetrix verify that BUK766R0-60E,118 is sourced from the original manufacturer or authorized distributors?
All BUK766R0-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK766R0-60E,118 meets industry standards.
7.What is the process for return or replacement of BUK766R0-60E,118?
All BUK766R0-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK766R0-60E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK766R0-60E,118 part is unused and in its original packaging.
Return procedure for BUK766R0-60E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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