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Nexperia USA Inc. BUK768R1-100E,118

Part No.:
BUK768R1-100E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK768R1-100E,118.pdf
Description:
MOSFET N-CH 100V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,682

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Product details

Overview

BUK768R1-100E from Nexperia is a standard-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 100 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 263 W total power dissipation. It features 6.4 mΩ typical RDS(on) at VGS = 10 V and 25 A, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for automotive power switching.

For engineers reviewing the BUK768R1-100E datasheet, BUK768R1-100E pinout, BUK768R1-100E application, or BUK768R1-100E equivalent, this device is selected for high-current, thermally demanding automotive loads where avalanche ruggedness, gate-threshold stability at elevated temperature, and mounting-base thermal performance are critical design factors.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with controlled QGD (38.6 nC) and QG(tot) (108 nC), enabling efficient operation in hard-switched DC-DC and motor drive topologies. Its true standard-level gate (VGS(th) > 1 V at 175 °C) ensures reliable turn-on with conventional 10 V gate drivers without level-shifting.

The device integrates a robust intrinsic body diode with 55 ns reverse recovery time and 134 nC recovered charge, supporting synchronous rectification and freewheeling in bidirectional power stages. Thermal resistance from junction to mounting base is 0.57 K/W, confirming direct heatsink-mounting capability for high-power density designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for 12 V/24 V/48 V automotive battery rail protection and load switching.
RDS(on) 6.4 mΩ (typ) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.6 W conduction loss at 50 A, critical for thermal management in compact modules.
ID (cont) 100 A at Tmb = 25 °C - Continuous current rating limited by package; derates to 78 A at Tmb = 100 °C per Fig. 1.
EAS 219 mJ (unclamped, single-pulse) - Supports repetitive avalanche operation in inductive load switching without external snubbers.
QGD 38.6 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations.
Tj max 175 °C - Extended junction temperature rating enables operation in engine bay and transmission control environments.
VGS(th) 1 V min at Tj = 175 °C - Ensures gate turn-on margin remains positive under worst-case thermal stress, avoiding unintended shutdown.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with isolated mounting base connected to drain; optimized for high-power thermal transfer via PCB copper pour or direct heatsink attachment.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Standard-level MOSFET control input; requires ≥10 V drive for full enhancement; threshold stable to 175 °C.
2 (D) Drain Main high-side power terminal; electrically tied to mounting base for low-inductance, low-thermal-resistance heat path.
3 (S) Source Power return node; referenced to gate drive ground; internal source inductance is 7.5 nH (critical for EMI control).
Mounting Base (mb) Drain Connection Exposed metal pad soldered to PCB thermal plane; provides 0.57 K/W Rth(j-mb) and carries full drain current.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing per AEC standard.
Repetitive avalanche rating Rated for unclamped inductive switching events up to 219 mJ, eliminating need for external clamping in solenoid/motor drives.
175 °C junction rating Enables placement in high-ambient zones (e.g., near engines or transmissions) without derating-driven board area inflation.
True standard-level gate VGS(th) > 1 V at 175 °C ensures gate driver compatibility with standard 10 V logic without bootstrap or charge-pump circuitry.
Low RDS(on) × QG figure-of-merit 6.4 mΩ × 108 nC = 691 mΩ·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz PWM applications.

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Control

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS systems requiring fault-tolerant, high-reliability power stages.

IC Role / Device Role / Timing Role: Main N-channel high-side switch in three-phase inverter bridge; handles peak currents >80 A during torque assist transients.

Use Value: Avalanche ruggedness and 175 °C rating prevent failure during sudden load dumps or short-circuit events common in steering actuation.

Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side load switch managing bidirectional energy flow between starter motor and battery during cranking and regenerative braking phases.

Use Value: 100 A continuous rating and low RDS(on) minimize voltage drop across switch during high-current cranking pulses (≥200 A peak).

Transmission Solenoid Driver 48 V Mild Hybrid DC-DC Converter

Use Scenario: Driving electro-hydraulic pressure control solenoids in automatic transmissions where precise current regulation and thermal resilience are mandatory.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating solenoid current with 10–20 kHz switching frequency and tight duty-cycle accuracy.

Use Value: Stable VGS(th) over temperature ensures consistent turn-on timing across -40 °C to 150 °C ambient, preventing solenoid response drift.

Use Scenario: Primary switch in bidirectional 48 V–12 V DC-DC converter for mild hybrid architectures requiring high efficiency and compact form factor.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in phase-shifted full-bridge topology operating at 100–200 kHz with zero-voltage switching.

Use Value: Low QGD/QG(tot) ratio and 55 ns trr reduce switching losses and body-diode conduction, improving conversion efficiency above 95%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N10F7 100 V, 220 A, 3.5 mΩ RDS(on), TO-220FP package, no AEC-Q101 certification Higher current capacity but lacks automotive qualification and has higher thermal resistance (Rth(j-a) ≈ 40 K/W vs. 0.57 K/W to mb) Select when non-automotive industrial use demands higher peak current and cost sensitivity outweighs qualification needs.
IRFB4115PBF 150 V, 110 A, 8.5 mΩ RDS(on), TO-220AB package, AEC-Q101 not claimed Higher voltage rating but higher on-resistance and no documented automotive qualification; slower switching (QGD = 52 nC) Prefer only if system requires >100 V blocking or legacy TO-220 footprint compatibility; not recommended for new automotive designs.

Compared with STL220N10F7 and IRFB4115PBF, BUK768R1-100E uniquely combines AEC-Q101 qualification, D2PAK thermal performance (0.57 K/W), and guaranteed VGS(th) > 1 V at 175 °C-making it the only option suitable for space-constrained, thermally aggressive automotive power stages requiring long-term reliability without derating.

Availability

BUK768R1-100E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid driver applications requiring stable component supply, automotive-grade traceability, and long-lifecycle support.

Supply support for BUK768R1-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature automotive subsystems where functional safety, thermal robustness, and AEC-Q101 compliance are non-negotiable.

FAQ

Is BUK768R1-100E pin-compatible with other D2PAK MOSFETs?

No-while physically compatible with standard D2PAK footprints, its pin 1 (G), pin 2 (D), and pin 3 (S) assignment matches JEDEC SOT404 but differs from some legacy D2PAK variants that swap gate and source. Always verify pinout using Table 2 of the official datasheet before PCB layout.

What is the maximum safe operating area (SOA) at 100 °C mounting base temperature?

At Tmb = 100 °C, the device supports ≤78 A continuous drain current (per Fig. 1) and maintains SOA integrity up to 100 V/100 A for DC, with pulsed limits extending to 439 A for ≤10 µs (per Fig. 4). Derating curves must be applied for sustained pulse operation.

Does the integrated body diode support synchronous rectification?

Yes-the source-drain diode exhibits 55 ns reverse recovery time and 134 nC recovered charge at 20 A, enabling use in synchronous buck or LLC topologies. However, its forward voltage (0.82 V typ at 25 A) is higher than Schottky alternatives, so efficiency trade-offs apply above 100 kHz.

Can BUK768R1-100E be used with 5 V gate drive?

No-it is a standard-level MOSFET requiring ≥10 V VGS for full enhancement. At 5 V, RDS(on) increases dramatically (>50 mΩ), causing excessive conduction loss and thermal runaway. A dedicated 10 V gate driver is mandatory.

BUK768R1-100E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7380 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
263W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK768R1-100E,118 FAQ

1.How can I place an order for BUK768R1-100E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK768R1-100E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK768R1-100E,118 reliable?

The price and inventory of BUK768R1-100E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK768R1-100E,118 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK768R1-100E,118?

For technical support, including BUK768R1-100E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK768R1-100E,118 requirements.

6.How does Aetrix verify that BUK768R1-100E,118 is sourced from the original manufacturer or authorized distributors?

All BUK768R1-100E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK768R1-100E,118 meets industry standards.

7.What is the process for return or replacement of BUK768R1-100E,118?

All BUK768R1-100E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK768R1-100E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK768R1-100E,118 part is unused and in its original packaging.

Return procedure for BUK768R1-100E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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