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Nexperia USA Inc. BUK768R3-60E,118
- Part No.:
- BUK768R3-60E,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK768R3-60E,118.pdf
- Description:
- MOSFET N-CH 60V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,158
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Product details
Overview
BUK768R3-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in SOT404 (D2PAK) package, rated for 60 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 137 W total power dissipation. It delivers 5.9 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, with true standard-level gate threshold (>1 V at 175 °C), enabling direct drive from 5 V microcontrollers in automotive motor and solenoid control.
For engineers reviewing the BUK768R3-60E datasheet, BUK768R3-60E pinout, BUK768R3-60E application, or BUK768R3-60E equivalent, this device is selected for thermally demanding 12 V automotive systems requiring repetitive avalanche capability, junction temperature up to 175 °C, and robust gate-source threshold stability across extreme thermal cycling.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance while maintaining high ruggedness. Its gate threshold voltage remains >1 V at 175 °C, ensuring reliable turn-on under hot-start conditions in start-stop micro-hybrid systems. The device integrates a monolithic source-drain diode with 27 ns reverse recovery time and 24 nC recovered charge, supporting fast-switching inductive load commutation.
Thermal design is enabled by a 1.09 K/W junction-to-mounting-base thermal resistance and a mounting base electrically connected to the drain. Its safe operating area supports 349 A peak drain current (10 µs pulses) and 86 mJ non-repetitive avalanche energy, meeting stringent AEC-Q101 stress requirements for transmission control and lamp drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum drain-source voltage - defines absolute upper limit for blocking capability in 12 V automotive battery-supplied circuits. |
| RDS(on) | 5.9 mΩ typical at VGS = 10 V, ID = 20 A, Tj = 25 °C - enables <1.2 W conduction loss at 50 A, critical for thermal management in sealed modules. |
| ID (cont) | 75 A at Tmb = 25 °C - package-limited continuous current, derating to 61.5 A at Tmb = 100 °C per Fig. 1. |
| QGD | 14.6 nC typical - gate-drain charge directly impacts switching speed and Miller plateau duration during hard-switching transitions. |
| EAS | 86 mJ non-repetitive avalanche energy - supports unclamped inductive switching events without failure in solenoid or motor phase-leg applications. |
| Tj max | 175 °C maximum junction temperature - qualified for sustained operation in engine bay environments and transmission control units. |
| VGS(th) | 1 V minimum at Tj = 175 °C - ensures gate turn-on margin remains intact after prolonged high-temperature exposure. |
Pinout & Package
Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically tied to drain terminal and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; standard-level threshold (VGS(th) > 1 V at 175 °C) allows direct interface with 5 V logic without level-shifting. |
| 2 (D) | Drain | Main high-side current path; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction. |
| 3 (S) | Source | Power return node; referenced to system ground in low-side switch configurations; forms cathode of integrated body diode. |
| Mounting Base (mb) | Drain / Thermal Interface | Electrically connected to drain; provides mechanical attachment and primary heat transfer path to heatsink or PCB copper plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and HTRB - required for engine control, transmission, and ADAS subsystems. |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching events - eliminates need for external snubbers in lamp and solenoid drivers. |
| 175 °C junction rating | Enables operation in under-hood locations where ambient exceeds 125 °C - reduces need for derating or oversized heatsinks. |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures consistent turn-on behavior across full automotive temperature range without gate driver augmentation. |
| Low RDS(on) × QG figure-of-merit | 43.1 nC total gate charge with 5.9 mΩ RDS(on) balances conduction and switching losses for 10–100 kHz PWM motor control. |
Applications
| Engine Start-Stop Control | Automotive Lamp Driver |
|---|---|
|
Use Scenario: High-current switching of starter motor solenoids and battery disconnect relays during micro-hybrid engine restart cycles. IC Role / Device Role / Timing Role: Low-side power switch handling 60–70 A inrush current with <100 ns turn-off delay to prevent contact welding. Use Value: 86 mJ avalanche energy rating absorbs inductive kickback without external clamping, reducing BOM count and PCB area. |
Use Scenario: PWM dimming and on/off control of LED headlamps and daytime running lights in 12 V vehicle architectures. IC Role / Device Role / Timing Role: High-efficiency, thermally robust switching element operating at 200–500 Hz with minimal thermal drift. Use Value: 5.9 mΩ RDS(on) limits conduction loss to <2 W at 60 A, enabling compact heatsink-free designs in space-constrained lamp housings. |
| Transmission Solenoid Actuation | 12 V DC Motor Control |
|
Use Scenario: Precision current regulation for electro-hydraulic pressure control valves in automatic transmissions. IC Role / Device Role / Timing Role: Fast-switching, high-ruggedness FET delivering 20–40 A pulsed current with tight duty-cycle control. Use Value: 27 ns reverse recovery time and 24 nC Qr minimize diode conduction loss during freewheeling, improving efficiency and reducing EMI. |
Use Scenario: H-bridge or half-bridge control of cabin blower, seat adjustment, and power window motors. IC Role / Device Role / Timing Role: High-current, high-temperature capable switch supporting 100% duty cycle under stall conditions. Use Value: 175 °C Tj rating and 1.09 K/W Rth(j-mb) allow sustained 50 A operation in enclosed motor control modules without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 2.2 mΩ RDS(on) in PowerFLAT 8x8; higher current but larger footprint and non-AEC-Q101 qualified. | Targeted at industrial motor drives, not automotive-qualified; lacks avalanche rating and 175 °C Tj validation. | Select only for non-automotive, high-current applications where AEC-Q101 compliance is not required. |
| IRF1405PBF | 55 V, 169 A, 5.3 mΩ RDS(on) in TO-220; no AEC-Q101 qualification, 175 °C Tj not validated, no repetitive avalanche spec. | Legacy industrial use; unsuitable for automotive due to missing qualification, thermal derating uncertainty, and no avalanche data. | Not recommended for automotive replacement; use only in legacy industrial designs with full requalification. |
Compared with STL220N6F7 and IRF1405PBF, BUK768R3-60E uniquely combines AEC-Q101 qualification, 175 °C junction rating, repetitive avalanche capability, and standard-level gate drive - making it the only drop-in solution for new automotive power switching designs requiring functional safety alignment.
Availability
BUK768R3-60E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and lighting systems requiring stable component supply with guaranteed long-term lifecycle support.
Supply support for BUK768R3-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.
BUK768R3-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-temperature, high-ruggedness 12 V automotive power switching - emphasizing AEC-Q101 compliance, thermal stability, and inductive load robustness.
FAQ
Is BUK768R3-60E suitable for high-frequency PWM motor control above 50 kHz?
Yes - with 14.6 nC QGD, 27 ns tr/tf, and 2188 pF Ciss, it supports efficient switching up to 100 kHz in half-bridge configurations. However, gate drive strength must exceed 2 A peak to minimize Miller-induced shoot-through risk at high dV/dt.
What is the maximum allowable PCB copper area for thermal performance in SOT404 mounting?
For optimal thermal performance, Nexperia recommends ≥2000 mm² of 2 oz copper on the mounting base layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground planes. This achieves near-datasheet Rth(j-a) of ~50 K/W in still air.
Does the integrated body diode support synchronous rectification in buck converters?
No - the body diode has 27 ns trr and 24 nC Qr, which cause significant switching loss and voltage overshoot in synchronous rectification. It is designed for freewheeling in inductive loads, not high-frequency rectification.
Can BUK768R3-60E replace BUZ70 in existing automotive designs?
Yes - both are 60 V, standard-level N-channel MOSFETs in D2PAK packages, but BUK768R3-60E offers lower RDS(on) (5.9 mΩ vs. 12 mΩ), AEC-Q101 qualification, and 175 °C Tj rating. Layout is pin-compatible; gate drive requirements are identical.
BUK768R3-60E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2920 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 137W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK768R3-60E,118 FAQ
1.How can I place an order for BUK768R3-60E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK768R3-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK768R3-60E,118 reliable?
The price and inventory of BUK768R3-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK768R3-60E,118 is usually 5 days.
3.What payment methods are accepted for BUK768R3-60E,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK768R3-60E,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK768R3-60E,118?
BUK768R3-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK768R3-60E,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK768R3-60E,118?
For technical support, including BUK768R3-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK768R3-60E,118 requirements.
6.How does Aetrix verify that BUK768R3-60E,118 is sourced from the original manufacturer or authorized distributors?
All BUK768R3-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK768R3-60E,118 meets industry standards.
7.What is the process for return or replacement of BUK768R3-60E,118?
All BUK768R3-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK768R3-60E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK768R3-60E,118 part is unused and in its original packaging.
Return procedure for BUK768R3-60E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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