NXP Semiconductors BUK78150-55A,115

Overview

BUK78150-55A from Nexperia is a standard-level N-channel TrenchMOS FET designed for automotive-critical power switching, featuring 55 V drain-source voltage rating, 5.5 A continuous drain current at 25 °C, 128 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, 25 mJ non-repetitive avalanche energy, and AEC-Q101 qualification for under-hood applications such as solenoid control in 12 V/24 V systems.

For engineers reviewing the BUK78150-55A datasheet, BUK78150-55A pinout, BUK78150-55A application, or BUK78150-55A equivalent, key selection considerations include its SOT223 (SC-73) package thermal resistance of 15 K/W (junction-to-solder-point), gate-threshold voltage range of 2–4 V at 25 °C, suitability for standard-level gate drive, and compliance with automotive reliability standards.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction losses and robust avalanche ruggedness. Its static characteristics are defined across -55 °C to 150 °C junction temperature, with V_GS(th) decreasing to 1 V at 150 °C and increasing to 4.4 V at -55 °C, ensuring stable turn-on behavior over automotive temperature extremes.

The device supports unclamped inductive switching with E_DS(AL)S = 25 mJ at I_D = 5 A and V_sup ≤ 55 V, and exhibits dynamic parameters including C_iss = 170–230 pF, t_d(on) = 3 ns, and t_f = 10 ns - enabling fast, efficient switching in motor and lamp driver circuits without requiring gate driver boost stages.

Key Specifications

Pinout & Package

Package: SOT223 (SC-73), plastic surface-mounted package with increased heatsink area and 4 leads - optimized for high-power density and solder-point thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with STP55NF06L and IRFZ44NPBF, the BUK78150-55A trades higher R_DS(on) and lower current for AEC-Q101 compliance, SOT223 surface-mount form factor, and validated avalanche ruggedness - making it uniquely suitable for compact, safety-aware automotive power nodes.

Availability

BUK78150-55A is available at Aetrix Electronics and suitable for automotive solenoid control, 12 V/24 V body electronics switching, and industrial relay replacement requiring stable component supply, long-lifecycle assurance, and traceable sourcing for Tier-1 and OEM production programs.

Supply support for BUK78150-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The BUK78150-55A belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for robust, space-efficient switching in 12 V and 24 V vehicle subsystems where reliability under thermal and electrical stress is mandatory.

FAQ

What is the maximum drain-source voltage rating for the BUK78150-55A?

The BUK78150-55A has a maximum drain-source voltage (V_DS) rating of 55 V, specified across the full junction temperature range of -55 °C to 150 °C. This rating ensures safe operation in 24 V automotive systems subject to ISO 7637-2 load-dump transients, and is confirmed in both the Quick Reference Data and Limiting Values tables of the official Nexperia datasheet Rev. 02.

Is the BUK78150-55A qualified for automotive applications?

Yes, the BUK78150-55A is AEC-Q101 qualified and explicitly designed and qualified for automotive critical applications, as stated in Section 1.1 of the Nexperia product data sheet. It meets the stress test requirements for temperature cycling, humidity, and mechanical shock applicable to under-hood and cabin-mounted electronic control units.

What is the typical R_DS(on) of the BUK78150-55A at room temperature?

The BUK78150-55A exhibits a typical drain-source on-state resistance (R_DS(on)) of 128 mΩ at V_GS = 10 V, I_D = 5 A, and T_j = 25 °C, as documented in Table 1 (Quick Reference Data) and Table 6 (Characteristics). This value increases to 278 mΩ at T_j = 150 °C, reflecting expected silicon behavior under thermal stress.

Which package does the BUK78150-55A use, and how many pins does it have?

The BUK78150-55A uses the SOT223 (SC-73) plastic surface-mounted package with four leads, as confirmed in Table 2 (Pinning Information) and Table 3 (Ordering Information). Pins 1–4 correspond to Gate, Drain, Source, and Drain respectively, with Pins 2 and 4 internally connected to the same drain node and exposed metal tab.

Does the BUK78150-55A include integrated avalanche energy capability?

Yes, the BUK78150-55A specifies a non-repetitive drain-source avalanche energy (E_DS(AL)S) of 25 mJ under conditions of I_D = 5 A, V_sup ≤ 55 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C, as detailed in Tables 1 and 4. This rating validates its ability to safely absorb inductive switching energy in solenoid and motor drive applications.