NXP Semiconductors BUK78150-55A,135

Overview

BUK78150-55A from Nexperia is a standard-level N-channel TrenchMOS FET in SOT223 (SC-73) package, rated for 55 V drain-source voltage, 5.5 A continuous drain current at 25 °C, 278 mΩ R_DS(on) at 150 °C, and qualified to AEC-Q101 for automotive power switching applications including 12 V/24 V lamp, motor, and solenoid control.

For engineers reviewing the BUK78150-55A datasheet, BUK78150-55A pinout, BUK78150-55A application, or BUK78150-55A equivalent, key selection criteria include its Q101 qualification, standard-level gate drive compatibility (V_GS(th) = 2–4 V), thermal resistance of 15 K/W (junction-to-solder point), avalanche energy rating of 25 mJ, and suitability for high-reliability 12 V/24 V automotive load switching.

Technical Context

This device operates as a single N-channel enhancement-mode MOSFET with trench-based silicon structure optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2–4 V at 25 °C) enables direct interface with standard 5 V or 3.3 V microcontroller outputs without level-shifting.

The SOT223 package features dual drain leads for enhanced thermal performance and current handling, supporting up to 8 W total power dissipation at 25 °C solder point temperature. Its 25 mJ non-repetitive avalanche energy rating confirms ruggedness under inductive load turn-off stress typical in automotive solenoid and motor circuits.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with increased heatsink area and four leads; lead 1 = Gate (G), leads 2 & 4 = Drain (D), lead 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Compared with STP55NF06L and IRFZ44NPBF, the BUK78150-55A offers AEC-Q101 compliance, SOT223 surface-mount packaging with dual-drain thermal enhancement, and guaranteed 278 mΩ R_DS(on) at 150 °C - making it uniquely suited for production automotive modules requiring reliability, compactness, and thermal robustness.

Availability

BUK78150-55A is available at Aetrix Electronics and suitable for automotive lighting control, engine management actuation, and body control module load switching requiring stable component supply and long-term lifecycle support.

Supply support for BUK78150-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

The BUK78150-55A belongs to Nexperia's TrenchMOS automotive power FET product line, engineered specifically for robust, space-efficient switching in 12 V and 24 V automotive electrical systems.

FAQ

What is the maximum drain-source voltage rating for the BUK78150-55A?

The BUK78150-55A has a maximum drain-source voltage (V_DS) rating of 55 V, specified across the full operating junction temperature range of −55 °C to 150 °C. This rating provides design margin for automotive 12 V and 24 V systems subject to load-dump transients per ISO 7637-2, and is confirmed in both the Quick Reference Data and Limiting Values tables of the official Nexperia datasheet.

Is the BUK78150-55A qualified for automotive applications?

Yes, the BUK78150-55A is explicitly designed and qualified to AEC-Q101 standards for use in automotive critical applications. The datasheet states this in Section 1.1 (General description) and reinforces it in the Features and Benefits section. Its qualification covers temperature cycling, humidity testing, and mechanical shock requirements essential for under-hood and cabin-mounted electronic control units.

What is the R_DS(on) value of the BUK78150-55A at 150 °C junction temperature?

The BUK78150-55A exhibits a maximum R_DS(on) of 278 mΩ at V_GS = 10 V, I_D = 5 A, and T_j = 150 °C, as specified in Table 1 (Quick reference data) and Table 6 (Characteristics). This value is critical for thermal design validation in high-temperature automotive environments and is confirmed by Figures 12 and 13 in the datasheet.

Does the BUK78150-55A support standard logic-level gate drive?

Yes, the BUK78150-55A is a standard-level FET with a gate-source threshold voltage (V_GS(th)) of 2–4 V at 25 °C, enabling direct drive from 3.3 V or 5 V microcontrollers without external level-shifting circuitry. This feature is highlighted in Section 1.2 (Features and benefits) and verified in Table 6, where V_GS(th) is characterized across temperature extremes.

What package type does the BUK78150-55A use, and how many pins does it have?

The BUK78150-55A uses the SOT223 (SC-73) plastic surface-mounted package with four leads: Pin 1 = Gate (G), Pins 2 & 4 = Drain (D), Pin 3 = Source (S). This configuration is documented in Table 2 (Pinning information) and Figure 16 (Package outline), and the dual-drain layout enhances thermal conduction and current capacity.