Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors BUK7880-55,135

Part No.:
BUK7880-55,135
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBUK7880-55,135.pdf
Description:
MOSFET N-CH 55V 3.5A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,561

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK7880-55 from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in SOT223 (SC-73) package, rated for 55 V drain-source voltage, 7.5 A continuous drain current at 25 °C, and 8.3 W total power dissipation. It features 65–80 mΩ RDS(on) at VGS = 10 V and ID = 5 A, integrated electrostatic protection diodes, and AEC-Q101 qualification for automotive critical power switching.

For engineers reviewing the BUK7880-55 datasheet, BUK7880-55 pinout, BUK7880-55 application, or BUK7880-55 equivalent, key selection considerations include its 55 V rating, SOT223 thermal performance (Rth(j-sp) = 12–15 K/W), avalanche ruggedness (30 mJ), gate threshold voltage range (2–4.4 V), and automotive-grade reliability validation.

Technical Context

This device operates as a standard-level enhancement-mode MOSFET requiring ≥10 V gate drive for full conduction. Its TrenchMOS architecture delivers low on-resistance with stable performance across -55 °C to 150 °C junction temperature range and supports unclamped inductive switching with verified non-repetitive avalanche energy of 30 mJ.

The 4-pin SOT223 package integrates the mounting base (Pin 4) directly to the drain, enabling enhanced thermal transfer to PCB copper. Gate-source breakdown voltage is ±16 V, and electrostatic robustness is confirmed at 2 kV HBM - critical for assembly and automotive system integration.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V maximum - defines safe operating voltage ceiling for 12 V/24 V automotive rail switching.
ID (continuous) 7.5 A at Tsp = 25 °C - usable current level before thermal derating begins.
RDS(on) 65–80 mΩ at VGS = 10 V, ID = 5 A, Tj = 25 °C - determines conduction loss and junction heating under load.
EDS(AL)S 30 mJ non-repetitive avalanche energy - enables reliable operation in inductive load switching without external snubbers.
VGS(th) 2–4.4 V threshold range - ensures turn-on compatibility with standard 5 V or 3.3 V logic drivers when margin is applied.
Rth(j-sp) 12–15 K/W junction-to-solder-point - quantifies thermal path efficiency to PCB, critical for sustained power handling.
Ciss 365–500 pF input capacitance - impacts gate drive strength requirements and switching speed control.

Pinout & Package

Package: SC-73 (SOT223), plastic surface-mounted package with 4 leads and integrated heatsink pad (Pin 4 connected to drain).

Pin/Terminal Circuit Role Design Meaning
1 G Gate terminal - controls channel conduction; requires ≥10 V for full enhancement; protected by integrated ESD diodes.
2 D Drain terminal - high-side switching node; electrically tied to Pin 4 (mounting base) for thermal and electrical continuity.
3 S Source terminal - return path for load current; referenced for gate drive and used as common node in low-side configurations.
4 D (Mounting Base) Drain-connected thermal pad - soldered to PCB copper for heat dissipation; must be electrically isolated from other nets except drain.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical applications including engine control, body electronics, and lighting modules.
Integrated ESD protection 2 kV HBM rating eliminates need for external gate protection in most board-level environments.
Low RDS(on) 65 mΩ typical reduces I²R losses and junction temperature rise in 12 V battery-fed loads.
Drain-connected thermal pad Pin 4 provides direct thermal path to PCB, enabling 8.3 W dissipation without external heatsink in optimized layouts.
Avalanche-rated 30 mJ unclamped energy capability allows robust operation with inductive loads like solenoids and motors.

Applications

Engine Control Module (ECM) Fuel Injector Driver Automotive HVAC Blower Motor Control

Use Scenario: Switching 12 V fuel injector coils with peak currents up to 7 A and fast PWM cycling.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing coil energization/de-energization timing.

Use Value: Avalanche ruggedness (30 mJ) safely absorbs inductive kickback; low RDS(on) minimizes self-heating during extended duty cycles.

Use Scenario: Controlling brushed DC blower motor in climate control systems with variable-speed PWM.

IC Role / Device Role / Timing Role: Low-side switching element modulating motor current via gate-controlled conduction.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; SOT223 thermal pad sustains 7.5 A continuous current at ambient temperatures up to 85 °C.

LED Headlamp Power Stage Body Control Module (BCM) Relay Replacement

Use Scenario: Driving high-intensity LED arrays (e.g., DRL, position lamps) requiring precise current regulation and thermal stability.

IC Role / Device Role / Timing Role: Constant-current switch in linear or PWM-based LED driver topologies.

Use Value: Tight VGS(th) distribution (2–4.4 V) enables predictable turn-on with microcontroller GPIO; low leakage (<10 µA at 150 °C) prevents standby current drift.

Use Scenario: Solid-state replacement for electromechanical relays controlling door locks, window lifts, or mirror actuators.

IC Role / Device Role / Timing Role: General-purpose power switch interfacing with 5 V or 3.3 V MCU outputs.

Use Value: Electrostatic robustness (2 kV HBM) withstands handling and board assembly; 55 V rating covers load dump transients per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP7NK50ZFP 500 V VDS, 7 A ID, TO-220FP package, higher RDS(on) (0.7 Ω), no AEC-Q101 rating Designed for mains-powered industrial SMPS, not automotive environments Select only for non-automotive 500 V applications where high-voltage blocking is required and qualification is not mandated.
ON Semiconductor NTMFS4C09NT1G 30 V VDS, 25 A ID, SO-8FL package, lower RDS(on) (3.4 mΩ), AEC-Q101 qualified Optimized for 12 V battery systems needing higher current and lower loss, but insufficient for 55 V load-dump scenarios Prefer for high-current 12 V loads where voltage stress remains below 30 V; verify against ISO 7637-2 pulse 5a/b limits.

Compared with STP7NK50ZFP and NTMFS4C09NT1G, the BUK7880-55 uniquely balances 55 V rating, AEC-Q101 compliance, SOT223 thermal capability, and 7.5 A current in a surface-mount automotive-qualified package - making it the only option among the three suitable for cost-sensitive, thermally constrained 12/24 V automotive power stages requiring load-dump resilience.

Availability

BUK7880-55 is available at Aetrix Electronics and suitable for automotive power switching, body electronics control, and industrial 24 V DC load management requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK7880-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK7880-55 belongs to NXP's TrenchMOS standard-level FET product line, engineered specifically for robust, cost-effective power switching in automotive subsystems where AEC-Q101 compliance, thermal efficiency, and transient resilience are mandatory.

FAQ

What is the maximum continuous drain current rating for the BUK7880-55?

The BUK7880-55 has a maximum continuous drain current (ID) of 7.5 A at solder point temperature (Tsp) = 25 °C. This value derates to 4.7 A at Tsp = 100 °C per the limiting values table. The actual usable current depends on PCB copper area, ambient temperature, and airflow - design must respect the normalized current vs. Tmb curve in Figure 1.

Is the BUK7880-55 suitable for automotive applications?

Yes, the BUK7880-55 is explicitly designed and qualified to AEC-Q101 standards for automotive critical applications. Its construction, testing, and characterization - including thermal cycling, humidity bias, and avalanche energy validation - meet automotive reliability requirements for use in engine control, lighting, HVAC, and body electronics systems.

What is the gate-source threshold voltage range for the BUK7880-55?

The BUK7880-55 gate-source threshold voltage (VGS(th)) ranges from 2.0 V minimum to 4.4 V maximum, measured at ID = 1 mA, VDS = VGS, and Tj = –55 °C to 150 °C. Typical value is 3 V at 25 °C, confirming compatibility with standard 5 V or 3.3 V logic-level gate drivers when sufficient overdrive is applied.

Does the BUK7880-55 have integrated ESD protection?

Yes, the BUK7880-55 includes integrated protection diodes that deliver 2 kV electrostatic discharge (ESD) robustness per Human Body Model (HBM). This eliminates the need for external gate protection components in most automotive PCB designs and improves manufacturing yield and field reliability.

How is thermal management handled in the BUK7880-55 package?

The BUK7880-55 uses an SC-73 (SOT223) package with Pin 4 serving as a drain-connected mounting base. This thermal pad must be soldered to a dedicated PCB copper pour to achieve the specified Rth(j-sp) of 12–15 K/W. Performance data in Figures 1 and 4 confirm power derating curves based on solder point temperature - layout must allocate ≥6.5 cm² of 2-oz copper for optimal thermal performance.

BUK7880-55,135 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SC-73

BUK7880-55,135 FAQ

1.How can I place an order for BUK7880-55,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7880-55,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7880-55,135 reliable?

The price and inventory of BUK7880-55,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7880-55,135 is usually 5 days.

3.What payment methods are accepted for BUK7880-55,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7880-55,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7880-55,135?

BUK7880-55,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7880-55,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7880-55,135?

For technical support, including BUK7880-55,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7880-55,135 requirements.

6.How does Aetrix verify that BUK7880-55,135 is sourced from the original manufacturer or authorized distributors?

All BUK7880-55,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7880-55,135 meets industry standards.

7.What is the process for return or replacement of BUK7880-55,135?

All BUK7880-55,135 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7880-55,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7880-55,135 part is unused and in its original packaging.

Return procedure for BUK7880-55,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK7880-55,135 Tags

  • BUK7880-55,135
  • BUK7880-55,135 PDF
  • BUK7880-55,135 Datasheet
  • BUK7880-55,135 Specifications
  • BUK7880-55,135 Images
  • NXP Semiconductors
  • NXP Semiconductors BUK7880-55,135
  • Buy BUK7880-55,135
  • BUK7880-55,135 Price
  • BUK7880-55,135 Distributor
  • BUK7880-55,135 Supplier
  • BUK7880-55,135 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER