NXP Semiconductors BUK7880-55A,115

Overview

BUK7880-55A from Nexperia is a standard-level N-channel TrenchMOS FET designed for automotive-critical power switching, featuring 55 V V_DS, 7 A continuous drain current at T_sp = 25 °C, and 68–80 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It operates with standard gate drive (10 V), supports 12 V/24 V loads, and is qualified to AEC-Q101.

For engineers reviewing the BUK7880-55A datasheet, BUK7880-55A pinout, BUK7880-55A application, or BUK7880-55A equivalent, key selection criteria include its SC-73 (SOT223) package thermal performance (R_th(j-sp) = 15 K/W), avalanche ruggedness (53 mJ unclamped), and suitability for motor, lamp, and solenoid control in automotive systems.

Technical Context

This device uses Nexperia's General Purpose Automotive (GPA) TrenchMOS technology to deliver low conduction losses and robust gate drive compatibility. Its threshold voltage ranges from 1.2 V (T_j = 150 °C) to 4.4 V (T_j = −55 °C), and it exhibits stable R_DS(on) over temperature with a normalized factor of ~1.8 at 150 °C.

The BUK7880-55A integrates an intrinsic source-drain diode with V_SD = 0.85–1.2 V at I_S = 15 A and T_j = 25 °C, and supports fast switching via low dynamic parameters: Q_G(tot) = 12 nC, t_r = 52 ns, t_f = 9 ns, and C_iss = 374–500 pF.

Key Specifications

Pinout & Package

Package: SC-73 (SOT223), plastic surface-mounted package with increased heatsink area and 4 leads. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S), Pin 4 = Drain (D). Dual-drain configuration enhances current handling and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Compared with STP7NK50ZFP and IRFZ44NPBF, the BUK7880-55A uniquely combines AEC-Q101 qualification, SOT223 thermal efficiency, and automotive-optimized 55 V/7 A ratings-making it the only option suitable for space-constrained, thermally demanding, safety-critical 12 V/24 V vehicle subsystems.

Availability

BUK7880-55A is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V motor control, and industrial solenoid interface applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK7880-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK7880-55A belongs to Nexperia's General Purpose Automotive (GPA) TrenchMOS family, engineered specifically for cost-sensitive yet reliability-critical 12 V/24 V power switching in body control, lighting, and actuator systems.

FAQ

What is the maximum junction temperature rating for the BUK7880-55A?

The BUK7880-55A has a maximum junction temperature (T_j) of 150 °C, as defined in its limiting values table. This rating enables operation in under-hood environments and supports continuous conduction at elevated ambient temperatures when mounted on adequate PCB copper. The BUK7880-55A must be thermally designed to ensure T_j does not exceed this limit under worst-case power dissipation and ambient conditions.

Is the BUK7880-55A suitable for use with 3.3 V microcontroller GPIOs?

No-the BUK7880-55A is a standard-level MOSFET requiring V_GS = 10 V for full enhancement and specified R_DS(on). At 3.3 V, its V_GS(th) (2–4 V typ.) may allow weak conduction, but R_DS(on) rises dramatically (>500 mΩ), causing excessive heating. The BUK7880-55A must be driven by a dedicated gate driver or level-shifting circuit when controlled by 3.3 V logic.

Does the BUK7880-55A have an integrated body diode, and what are its characteristics?

Yes-the BUK7880-55A includes an intrinsic source-drain diode with V_SD = 0.85–1.2 V at I_S = 15 A and T_j = 25 °C, and reverse recovery time (t_rr) = 33 ns. This diode supports freewheeling in inductive loads like motors and solenoids, and its fast recovery minimizes switching losses during PWM operation. The BUK7880-55A leverages this diode in low-side configurations without external components.

What is the meaning of the dual-drain configuration (Pins 2 and 4) in the BUK7880-55A?

The dual-drain configuration connects both drain terminals internally to the same silicon die, effectively doubling the bond-wire and leadframe current-carrying capacity. This reduces current density per pin, lowers effective package resistance, improves thermal spreading to the PCB, and increases reliability under pulsed or continuous high-current stress. In the BUK7880-55A, this design directly supports its 7 A continuous rating in the compact SOT223 outline.

How does the BUK7880-55A's avalanche ruggedness compare to non-automotive MOSFETs?

The BUK7880-55A is rated for 53 mJ of non-repetitive drain-source avalanche energy under defined test conditions (I_D = 7 A, V_sup ≤ 55 V, R_GS = 50 Ω), a specification rigorously validated per AEC-Q101. Most general-purpose MOSFETs omit avalanche testing or specify only qualitative ruggedness. This quantified rating makes the BUK7880-55A suitable for unclamped inductive switching without external protection-unlike non-automotive equivalents such as the IRFZ44NPBF, which lacks published avalanche data.