Nexperia USA Inc. BUK7880-55/CUF

Overview

BUK7880-55/CUF from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in SOT223 (SC-73) package, rated for 55 V V_DS, 7.5 A continuous drain current at T_sp = 25 °C, and 65–80 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It is AEC-Q101 qualified for automotive critical power switching applications including body control modules and lighting drivers.

For engineers reviewing the BUK7880-55 datasheet, BUK7880-55 pinout, BUK7880-55 application, or BUK7880-55 equivalent, key selection criteria include its 55 V breakdown voltage, integrated drain-source diode with 38 ns reverse recovery time, avalanche ruggedness (30 mJ), electrostatic robustness (2 kV HBM), and thermal resistance of 12–15 K/W from junction to solder point.

Technical Context

This device operates as a single N-channel enhancement-mode FET using trench-gate silicon technology, optimized for low conduction loss and high reliability in DC and PWM-controlled automotive loads. Its gate threshold voltage ranges from 2.0 V (typ.) to 4.4 V (max) across temperature, enabling compatibility with 5 V and 12 V logic-level drive systems without external level shifting.

The SC-73 package features a thermally enhanced 4-lead configuration with Pin 4 as the mounting base electrically connected to the drain, supporting direct PCB heatsinking. Dynamic parameters-including 365–500 pF C_iss, 15–25 ns rise time, and 12–18 ns fall time-support efficient switching up to ~100 kHz in medium-power applications.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads and integral heatsink pad; Pin 4 is the mounting base, internally connected to the drain terminal for low-inductance, low-thermal-resistance PCB mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF55 and NTMFS4C09N, BUK7880-55/CUF uniquely balances AEC-Q101 compliance, SOT223 thermal performance, 55 V transient tolerance, and 7.5 A capability-making it optimal for cost-sensitive, thermally constrained automotive modules requiring qualification and field reliability.

Availability

BUK7880-55/CUF is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, engine cooling systems, and 12 V/24 V DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for BUK7880-55/CUF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BUK7880-55 belongs to NXP's TrenchMOS automotive power portfolio, designed specifically for robust, low-loss switching in safety-critical vehicle subsystems where AEC-Q101 qualification and thermal resilience are mandatory.

FAQ

Is BUK7880-55/CUF suitable for high-side switching configurations?

Yes-it supports high-side operation when driven by a gate driver capable of providing V_GS ≥ 10 V relative to the source (e.g., bootstrap or isolated driver). Its 16 V V_GS rating and 55 V V_DS allow use in 24 V systems with sufficient gate overdrive. The integrated drain-source diode does not impede high-side functionality but must be considered in freewheeling paths.

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies a 6.5 cm² mounting pad for drain on FR4 PCB to achieve R_th(j-a) ≈ 120 K/W. For optimal thermal performance, extend copper beyond this minimum: doubling the area reduces R_th(j-sp) by ~10%, and internal copper layers connected via thermal vias further improve heat spreading. No upper limit exists-larger pads directly enhance steady-state power handling.

Does BUK7880-55/CUF require external gate resistors in typical automotive applications?

Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. This prevents false triggering and reduces EMI. Values below 5 Ω risk excessive dV/dt-induced shoot-through in bridge configurations; above 22 Ω significantly increases switching losses and thermal stress during PWM operation.

Can BUK7880-55/CUF replace older BUK7580-55 in existing designs?

Yes-BUK7880-55/CUF is a direct replacement for BUK7580-55 with identical pinout, package, and electrical specifications. Both share the same SOT223 footprint, 55 V rating, and AEC-Q101 qualification. Minor improvements include tighter R_DS(on) distribution and updated process control, requiring no layout or firmware changes in legacy automotive modules.