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NXP Semiconductors BUK7E07-55B,127
- Part No.:
- BUK7E07-55B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK7E07-55B,127.pdf
- Description:
- MOSFET N-CH 55V 75A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,566
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Product details
Overview
BUK7E07-55B,127 from Nexperia is an N-channel enhancement-mode TrenchMOS power FET in I2PAK (SOT226) package, designed for automotive-critical applications per AEC-Q101. It delivers 5.8 mΩ typical RDS(on) at VGS = 10 V, supports 75 A continuous drain current at Tmb = 100 °C, and operates up to 175 °C junction temperature-enabling robust 12 V/24 V load switching in engine control units and body electronics.
For engineers reviewing the BUK7E07-55B,127 datasheet, BUK7E07-55B,127 pinout, BUK7E07-55B,127 application, or BUK7E07-55B,127 equivalent, key selection factors include its 55 V VDS, low thermal resistance (Rth(j-mb) = 0.74 K/W), unclamped avalanche energy rating (351 mJ), standard-level gate drive compatibility, and AEC-Q101 qualification for automotive systems.
Technical Context
This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low on-state resistance while maintaining high avalanche ruggedness. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable turn-on across automotive temperature extremes.
The integrated source-drain diode exhibits 0.85 V typical forward voltage at 25 A and 62 ns reverse recovery time, supporting inductive load commutation. Thermal design is anchored by direct mounting-base heat transfer (Rth(j-mb) = 0.74 K/W), with package-limited current handling (75 A) independent of silicon capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; defines use in 12 V/24 V automotive systems with load dump margin. |
| RDS(on) | 5.8 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A, reducing heatsink requirements. |
| ID (cont) | 75 A at Tmb = 100 °C - Package-limited continuous current; supports high-power solenoid and motor drivers. |
| EAS | 351 mJ (non-repetitive) - Withstands unclamped inductive switching events without failure, critical for relay and lamp load control. |
| Tj(max) | 175 °C - Qualified for under-hood environments; enables operation in engine bay ECU modules. |
| Rth(j-mb) | 0.74 K/W - Low junction-to-mounting-base thermal resistance allows efficient PCB or heatsink cooling. |
| VGS(th) | 2–4 V at 25 °C - Standard-level gate drive compatibility; interfaces directly with 3.3 V/5 V microcontrollers without level shifters. |
Pinout & Package
Package: I2PAK (SOT226), plastic single-ended 3-lead TO-220AB variant with low-profile mounting base electrically connected to drain. Mounting base serves as primary thermal path and high-current drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≤±20 V drive; 53 nC total gate charge dictates driver strength requirements. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for thermal and current conduction. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configurations. |
| Mounting base (mb) | Drain connection | Electrically tied to Pin 2; must be soldered to copper pour or heatsink for thermal management and current carrying. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine management and ADAS power stages. |
| 175 °C rated junction | Enables deployment in high-temperature zones (e.g., near exhaust manifolds or transmission control units) without derating. |
| Low RDS(on) × QG figure-of-merit | 5.8 mΩ × 53 nC = 307 mΩ·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz PWM operation. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate drive; compatible with legacy 5 V logic and modern 3.3 V MCU GPIO via simple resistor networks. |
| High avalanche energy (351 mJ) | Withstands worst-case inductive kickback from 75 A loads without external snubbers in many automotive solenoid applications. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Driving 12 V fuel injectors with peak currents up to 75 A and fast switching cycles. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling injector coil energization/de-energization. Use Value: 351 mJ avalanche rating absorbs inductive flyback without clamping diodes; 5.8 mΩ RDS(on) minimizes power loss during extended dwell times. |
Use Scenario: Managing 24 V headlamp, fog lamp, and interior lighting loads in modern BCMs. IC Role / Device Role / Timing Role: Load-switching MOSFET providing overcurrent protection and PWM dimming capability. Use Value: 175 °C rating ensures reliability in sealed BCM enclosures; AEC-Q101 compliance guarantees long-term field operation. |
| Electric Power Steering (EPS) Motor Phase Switch | Commercial Vehicle 24 V Starter Relay Replacement |
|
Use Scenario: Replacing electromechanical relays in EPS motor H-bridge phase legs for improved response and lifetime. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration with fast 52 ns rise time. Use Value: 478 A peak drain current supports motor stall conditions; 7.5 nH internal source inductance reduces switching ringing. |
Use Scenario: Solid-state replacement for bulky 24 V starter relays in trucks and buses requiring >50,000 cycle life. IC Role / Device Role / Timing Role: High-current main contactor switch handling cranking surges up to 478 A. Use Value: Mounting base connection to drain enables direct bolt-down heatsinking; 0.74 K/W Rth(j-mb) sustains repeated high-current pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 60 V VDS, 2.2 mΩ RDS(on), DFN8 5×6 mm package, no mounting base | Higher current density but limited to surface-mount thermal management; lacks automotive qualification | Preferred for space-constrained non-automotive industrial SMPS where board-level heatsinking suffices. |
| IRF1404ZPBF | 40 V VDS, 4.7 mΩ RDS(on), TO-220 package, not AEC-Q101 qualified | Lower voltage rating restricts use to 12 V systems only; no guaranteed automotive reliability data | Suitable for cost-sensitive 12 V consumer applications where AEC-Q101 is not mandated. |
Compared with STL220N5LF8AG and IRF1404ZPBF, the BUK7E07-55B,127 uniquely combines 55 V rating, AEC-Q101 qualification, mounting-base thermal interface, and 351 mJ avalanche ruggedness-making it the only drop-in solution for thermally demanding, safety-critical 12 V/24 V automotive load switching.
Availability
BUK7E07-55B,127 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and commercial vehicle power distribution requiring stable component supply, long lifecycle support, and traceable sourcing.
Supply support for BUK7E07-55B,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The BUK7E series belongs to Nexperia's Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant, high-temperature, high-ruggedness applications in engine management, chassis, and body electronics.
FAQ
What is the maximum continuous drain current rating for BUK7E07-55B,127?
The BUK7E07-55B,127 supports 75 A continuous drain current at mounting base temperature (Tmb) = 100 °C. This limit is package-constrained-not silicon-limited-as confirmed in Table 3 of the datasheet. At Tmb = 25 °C, the theoretical silicon limit rises to 119 A, but the I2PAK package caps usable current at 75 A for thermal and reliability reasons. Derating curves in Figure 2 define safe operating area across temperature.
Is BUK7E07-55B,127 qualified for automotive applications?
Yes, the BUK7E07-55B,127 is explicitly qualified to AEC-Q101 standards for automotive use, as stated in Section 1.1 ("designed and qualified to the appropriate AEC standard for use in Automotive critical applications"). It features 175 °C junction rating, robust avalanche performance (351 mJ), and process controls validated for engine control, transmission, and body electronics deployments.
What is the gate threshold voltage range for BUK7E07-55B,127?
The BUK7E07-55B,127 has a gate-source threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C, and remains functional down to 1 V at Tj = 175 °C (Table 5). This wide operational window ensures reliable turn-on across automotive temperature extremes and compatibility with both 5 V and 3.3 V microcontroller outputs when driven with sufficient gate voltage margin.
Does BUK7E07-55B,127 have an integrated body diode, and what are its characteristics?
Yes, the BUK7E07-55B,127 includes an inherent source-drain body diode. Its forward voltage is 0.85 V typical at IS = 25 A and Tj = 25 °C (Table 5), with 62 ns reverse recovery time and 60 nC recovered charge. These parameters enable effective freewheeling in inductive load circuits such as solenoids and motors without external diodes in many designs.
What thermal resistance values apply to BUK7E07-55B,127?
The BUK7E07-55B,127 has Rth(j-mb) = 0.74 K/W (maximum) from junction to mounting base, and Rth(j-a) = 60 K/W (typical) from junction to ambient in vertical still air (Table 4). The low Rth(j-mb) confirms its suitability for direct heatsink mounting, while the high Rth(j-a) underscores the necessity of using the mounting base for thermal management-board-only dissipation is insufficient for full-power operation.
BUK7E07-55B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 203W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK7E07-55B,127 FAQ
1.How can I place an order for BUK7E07-55B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7E07-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7E07-55B,127 reliable?
The price and inventory of BUK7E07-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E07-55B,127 is usually 5 days.
3.What payment methods are accepted for BUK7E07-55B,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E07-55B,127 transactions.
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4.How is shipping managed for BUK7E07-55B,127?
BUK7E07-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7E07-55B,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7E07-55B,127?
For technical support, including BUK7E07-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E07-55B,127 requirements.
6.How does Aetrix verify that BUK7E07-55B,127 is sourced from the original manufacturer or authorized distributors?
All BUK7E07-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E07-55B,127 meets industry standards.
7.What is the process for return or replacement of BUK7E07-55B,127?
All BUK7E07-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E07-55B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7E07-55B,127 part is unused and in its original packaging.
Return procedure for BUK7E07-55B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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