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NXP Semiconductors BUK7E11-55B,127
- Part No.:
- BUK7E11-55B,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK7E11-55B,127.pdf
- Description:
- MOSFET N-CH 55V 75A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:990
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Product details
Overview
BUK7E11-55B from Nexperia is an N-channel TrenchMOS standard-level power MOSFET in I2PAK (SOT226) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 9.9–11 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for automotive 12 V/24 V load switching in thermally demanding environments up to 175 °C junction temperature.
For engineers reviewing the BUK7E11-55B datasheet, BUK7E11-55B pinout, BUK7E11-55B application, or BUK7E11-55B equivalent, key selection considerations include its low on-resistance, avalanche ruggedness (173 mJ), thermal resistance (Rth(j-mb) = 0.95 K/W), gate-drive compatibility with standard 10 V logic, and automotive qualification status.
Technical Context
This device uses TrenchMOS technology to achieve low conduction losses and stable performance across wide temperature ranges. Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling robust turn-on under high-temperature conditions.
The MOSFET features a mounting base connected to the drain, supporting efficient heat transfer to heatsinks. Its dynamic characteristics include QG(tot) = 37 nC, QGD = 12 nC, and fast switching times (td(on) = 11 ns, tf = 27 ns), optimized for high-efficiency power switching in automotive and industrial systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; supports 12 V and 24 V automotive systems with margin against transients. |
| ID (continuous) | 75 A at Tmb = 25 °C - Package-limited current rating; enables high-power load control without external parallel devices. |
| RDS(on) | 9.9–11 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss reduces power dissipation and improves system efficiency. |
| Tj max | 175 °C - Extended junction temperature rating allows operation in engine bay and other high-thermal-stress locations. |
| Rth(j-mb) | 0.95 K/W - Low thermal resistance from junction to mounting base enables effective heatsinking and higher sustained power output. |
| EAS | 173 mJ - Non-repetitive avalanche energy rating ensures robustness against inductive load switching surges. |
| VGS(th) | 2–4 V at 25 °C - Standard-level gate drive compatibility with 5 V and 3.3 V microcontrollers via appropriate level-shifting or buffer stages. |
Pinout & Package
Package: I2PAK (SOT226), plastic single-ended TO-262 outline with isolated mounting base electrically connected to the drain terminal. Dimensions: 15.0 × 10.3 × 4.5 mm (L × W × H); mounting base provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤20 V gate-source voltage; low gate charge (QG(tot) = 37 nC) enables fast, low-loss switching. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for direct heatsink attachment and low-inductance power routing. |
| 3 (S) | Source | Power return path; referenced to system ground in low-side switch configurations; source inductance LS = 7.5 nH impacts switching behavior. |
| Mounting base (mb) | Drain connection | Electrically tied to drain pin 2; serves as primary thermal interface and mechanical anchor; must be insulated if mounted to grounded heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive critical applications including engine control, body electronics, and ADAS subsystems. |
| Low RDS(on) | 9.9–11 mΩ at 25 °C enables <1.5 W conduction loss at 30 A, reducing thermal design burden and improving reliability. |
| 175 °C junction rating | Supports operation in under-hood environments without derating, eliminating need for oversized heatsinks in many designs. |
| Standard-level gate drive | Operates reliably with 10 V gate drive; compatible with common logic-level drivers and avoids requirement for dedicated gate-driver ICs. |
| Avalanche ruggedness | 173 mJ unclamped avalanche energy provides inherent protection during inductive load turn-off without external snubbers. |
Applications
| Automotive Body Control Module | 12 V/24 V DC Motor Drive |
|---|---|
Use Scenario: Switching headlamps, HVAC blowers, seat adjusters, and door locks in modern vehicle body control units. IC Role / Device Role / Timing Role: High-current, low-side power switch controlling resistive and inductive loads with PWM capability. Use Value: AEC-Q101 qualification ensures long-term reliability in vibration-prone, high-temperature environments; low RDS(on) minimizes heat generation during extended duty cycles. |
Use Scenario: Driving brushed DC motors in power windows, sunroofs, and wiper systems. IC Role / Device Role / Timing Role: Bidirectional or unidirectional motor driver with freewheeling diode conduction during PWM off-time. Use Value: Integrated source-drain diode (VSD = 0.85–1.2 V) handles reverse recovery (trr = 60 ns, Qr = 58 nC), reducing need for external flyback diodes. |
| Industrial Solenoid Control | LED Lighting Power Stage |
Use Scenario: Controlling fuel injectors, pneumatic valves, and hydraulic solenoids in factory automation and agricultural equipment. IC Role / Device Role / Timing Role: Fast-switching, high-energy pulse driver handling repetitive inductive kickback events. Use Value: 173 mJ avalanche energy rating absorbs repeated inductive spikes without degradation, extending service life in cyclic duty applications. |
Use Scenario: High-current dimming and on/off control of LED arrays in commercial and automotive lighting. IC Role / Device Role / Timing Role: Constant-current or PWM-controlled main power switch in buck or linear LED drivers. Use Value: 75 A continuous rating supports multi-string LED configurations; low RDS(on) maintains >98% efficiency at full load, reducing thermal management complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF55-08 | 55 V VDS, 75 A ID, RDS(on) = 10.5 mΩ @ 10 V, TO-220 package, non-AEC-Q101 | Lacks automotive qualification; higher Rth(j-a) (65 K/W) limits thermal performance in enclosed spaces | Preferred for cost-sensitive industrial applications where AEC-Q101 is not required and board-level heatsinking suffices. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, RDS(on) = 28 mΩ @ 10 V, TO-220, non-AEC-Q101 | Lower current rating and higher on-resistance increase conduction loss by ~2.5×; no avalanche rating specified | Suitable only for lower-power 12 V loads (<25 A) with ample thermal margin and no automotive qualification needs. |
Compared with STP75NF55-08 and IRFZ44NPBF, the BUK7E11-55B delivers superior thermal performance (0.95 K/W vs. ≥1.5 K/W), guaranteed automotive qualification, and higher avalanche ruggedness-making it the preferred choice for safety-critical, high-reliability 12 V/24 V switching where board space and thermal constraints are tight.
Availability
BUK7E11-55B is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, and 12 V/24 V motor drive applications requiring stable component supply, long lifecycle support, and traceable sourcing.
Supply support for BUK7E11-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun out from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.
The BUK7E11-55B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for high-reliability, thermally robust switching in 12 V and 24 V automotive electrical systems.
FAQ
What is the maximum continuous drain current rating for BUK7E11-55B?
The BUK7E11-55B has a maximum continuous drain current of 75 A at mounting base temperature (Tmb) = 25 °C, limited by package thermal capacity-not silicon capability. At Tmb = 100 °C, this drops to 59 A per Figure 1 in the datasheet. Derating curves must be applied for real-world thermal conditions.
Is BUK7E11-55B suitable for automotive applications?
Yes, the BUK7E11-55B is AEC-Q101 qualified and explicitly designed for automotive critical applications. It meets stringent requirements for temperature cycling, humidity, mechanical shock, and long-term reliability in engine compartments and body control modules.
What is the gate-source threshold voltage range for BUK7E11-55B?
The gate-source threshold voltage (VGS(th)) for BUK7E11-55B is 2–4 V at Tj = 25 °C, and remains functional down to 1 V at Tj = 175 °C. This ensures reliable turn-on with standard 5 V or 3.3 V logic when paired with appropriate gate drivers.
Does BUK7E11-55B have an integrated body diode?
Yes, the BUK7E11-55B includes a monolithic source-drain diode with forward voltage VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C. Its reverse recovery time (trr) is 60 ns and recovered charge (Qr) is 58 nC, enabling use in freewheeling and synchronous rectification roles.
What package type does BUK7E11-55B use, and how is thermal management handled?
The BUK7E11-55B uses the I2PAK (SOT226) package, with its mounting base electrically connected to the drain. Thermal management relies on direct mounting of this base to a heatsink, achieving Rth(j-mb) = 0.95 K/W-significantly lower than typical TO-220 packages-and enabling high-power operation without forced air cooling.
BUK7E11-55B,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2604 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK7E11-55B,127 FAQ
1.How can I place an order for BUK7E11-55B,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7E11-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7E11-55B,127 reliable?
The price and inventory of BUK7E11-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E11-55B,127 is usually 5 days.
3.What payment methods are accepted for BUK7E11-55B,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E11-55B,127 transactions.
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4.How is shipping managed for BUK7E11-55B,127?
BUK7E11-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7E11-55B,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7E11-55B,127?
For technical support, including BUK7E11-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E11-55B,127 requirements.
6.How does Aetrix verify that BUK7E11-55B,127 is sourced from the original manufacturer or authorized distributors?
All BUK7E11-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E11-55B,127 meets industry standards.
7.What is the process for return or replacement of BUK7E11-55B,127?
All BUK7E11-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E11-55B,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7E11-55B,127 part is unused and in its original packaging.
Return procedure for BUK7E11-55B,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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