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Nexperia USA Inc. BUK7E1R8-40E,127

Part No.:
BUK7E1R8-40E,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixBUK7E1R8-40E,127.pdf
Description:
MOSFET N-CH 40V 120A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,726

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Product details

Overview

BUK7E1R8-40E from Nexperia is a standard-level N-channel TrenchMOS FET in I2PAK (SOT226) package, rated for 40 V VDS, 1.5 mΩ RDS(on) at 25 °C, 120 A continuous drain current at Tmb = 25 °C, and qualified to AEC-Q101 for automotive use. It serves as a high-current power switch in thermally demanding 12 V systems including electric power steering and start-stop micro-hybrid control.

For engineers reviewing the BUK7E1R8-40E datasheet, BUK7E1R8-40E pinout, BUK7E1R8-40E application, or BUK7E1R8-40E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, true standard-level gate (VGS(th) > 1 V at 175 °C), and low RDS(on) with minimal thermal derating up to 100 °C mounting base temperature.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance while maintaining robust switching performance and thermal stability. Its gate threshold voltage remains functional above 1 V even at 175 °C, enabling reliable turn-on with standard 10 V gate drivers in high-temperature automotive environments.

The device features integrated source-drain diode with 56 ns reverse recovery time and 94 nC recovered charge, supporting synchronous rectification and inductive load switching. Its 0.43 K/W junction-to-mounting-base thermal resistance enables high-power operation when mounted on copper heatsinks or PCB thermal pads.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage; supports 12 V automotive systems with margin against load-dump transients.
RDS(on) 1.5 mΩ (typ.) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.5 W conduction loss at 100 A, critical for high-efficiency motor/solenoid drivers.
ID (cont) 120 A at Tmb = 25 °C - Package-limited continuous current; derates to 120 A even at Tmb = 100 °C per Fig. 1.
EAS 1021 mJ (unclamped single-pulse) - Confirmed repetitive avalanche rating ensures reliability during inductive switching faults in transmission or EPS systems.
Tj max 175 °C - Junction temperature limit validated per AEC-Q101; allows operation in under-hood locations without active cooling.
QGD 48.2 nC (typ.) - Gate-drain charge determines Miller plateau duration; enables predictable 121 ns td(off) with 5 Ω external gate resistor.
Ciss 8500–11340 pF - Input capacitance impacts gate drive power and switching speed; requires ≥2 A peak gate driver for fast transitions.

Pinout & Package

I2PAK (SOT226) plastic single-ended package with isolated mounting base connected internally to drain. Package dimensions: 15.0 × 10.3 × 4.5 mm (L × W × H), with 2.54 mm lead pitch and low-profile profile suitable for automated assembly and thermal interface to heatsinks.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Standard-level MOSFET gate input; requires ≥10 V for full enhancement; VGS(th) > 1 V at 175 °C ensures turn-on margin in hot environments.
2 (D) Drain Main high-side or low-side power path terminal; electrically tied to mounting base for direct thermal coupling to heatsink.
3 (S) Source Power return node; forms reference for gate drive; internal source bonding pad minimizes LS (7.5 nH) for clean switching waveforms.
Mounting Base (mb) Drain Connection / Thermal Interface Electrically connected to drain pin; provides primary thermal path (Rth(j-mb) = 0.43 K/W); must be soldered or clamped to heatsink for rated power dissipation.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine bay and transmission control modules; includes temperature cycling, humidity testing, and mechanical shock compliance.
Repetitive avalanche rating Rated for repeated unclamped inductive switching events up to 1021 mJ, eliminating need for external snubbers in solenoid and motor control circuits.
175 °C junction rating Enables uninterrupted operation in under-hood environments where ambient temperatures exceed 125 °C, reducing system-level thermal management complexity.
True standard-level gate VGS(th) > 1 V at 175 °C ensures compatibility with standard 10 V microcontroller GPIOs and dedicated gate drivers without level-shifting circuitry.
Low RDS(on) with thermal stability RDS(on) increases only 2.3× from 25 °C to 175 °C (per Fig. 12), maintaining <3.4 mΩ at max junction temperature for predictable conduction loss.

Applications

Electric Power Steering (EPS) Start-Stop Micro-Hybrid Control

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules operating continuously at 12 V with peak loads >80 A.

IC Role / Device Role / Timing Role: Low-side N-channel power switch in 3-phase inverter bridge; handles bidirectional motor current with integrated body diode recovery.

Use Value: 1.5 mΩ RDS(on) reduces conduction loss by >40% vs. comparable 2.5 mΩ devices, directly improving EPS efficiency and reducing heatsink size.

Use Scenario: Controlling starter motor engagement and battery isolation during engine restart in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current load switch in starter solenoid driver or battery disconnect circuit; withstands repeated cranking pulses and load dump transients.

Use Value: Repetitive avalanche rating and 175 °C rating ensure survival during frequent cold-cranking cycles and under-hood thermal stress without derating.

Transmission Control Solenoids 12 V Automotive Lighting Systems

Use Scenario: PWM-driven proportional pressure control valves in automatic transmission hydraulic manifolds requiring precise current regulation up to 10 A.

IC Role / Device Role / Timing Role: High-side or low-side current-controlled switch; operates in linear mode during PWM ramp phases with stable VGS(th) across temperature.

Use Value: Tight VGS(th) specification (2.4–4 V at 25 °C, >1 V at 175 °C) ensures consistent turn-on timing and reduced current overshoot during solenoid actuation.

Use Scenario: High-brightness LED headlamp and DRL driver stages requiring >5 A continuous current with fast PWM dimming and thermal resilience.

IC Role / Device Role / Timing Role: Low-side PWM switch in constant-current LED string driver; handles 100 kHz+ switching with low QGD and fast tf (83 ns).

Use Value: 48.2 nC QGD and 83 ns fall time enable efficient 200 kHz PWM operation with <5% duty-cycle dead-time, minimizing LED flicker and thermal rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 2.2 mΩ RDS(on), 175 °C, but uses SuperSO8 package (no isolated mounting base); lower ID (100 A) and no AEC-Q101 documentation in public datasheet. Limited to PCB-mounted thermal management; unsuitable for high-power EPS or starter applications requiring direct heatsink attachment. Select only for space-constrained PCBs where <100 A continuous current suffices and heatsink integration is not required.
IRF1404ZPBF 40 V, 4.0 mΩ RDS(on), TO-220 package, 175 °C, but not AEC-Q101 qualified; higher RDS(on) and 0.65 K/W Rth(j-c) limits power handling. Not certified for automotive safety-critical functions; lacks repetitive avalanche rating and fails AEC-Q101 vibration/thermal cycling requirements. Acceptable only for non-automotive industrial or consumer 12 V switching where qualification is not mandated.

Compared with STL220N4F7AG and IRF1404ZPBF, the BUK7E1R8-40E uniquely combines AEC-Q101 qualification, I2PAK thermal performance (0.43 K/W), and sub-2 mΩ on-resistance-making it the only option qualified for high-reliability, high-current automotive power switching where mounting base thermal coupling and fault tolerance are mandatory.

Availability

BUK7E1R8-40E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK7E1R8-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified MOSFETs, ESD protection, and logic families.

This device belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where AEC-Q101 compliance, thermal robustness, and avalanche ruggedness are non-negotiable.

FAQ

Is BUK7E1R8-40E suitable for high-frequency PWM applications above 100 kHz?

Yes-its 48.2 nC QGD, 83 ns fall time, and 8.5–11.3 nF Ciss support efficient switching at 200 kHz with appropriate gate driving. However, gate drive strength must exceed 2 A peak to minimize switching losses, and layout must minimize loop inductance given its 4.5 nH internal drain inductance.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Per Figure 1 in the datasheet, continuous drain current remains at 120 A up to Tmb = 100 °C. Above that, current must be linearly derated; at Tmb = 125 °C, maximum continuous current drops to approximately 95 A. The mounting base must be thermally coupled to a heatsink capable of maintaining ≤100 °C under full load.

Does the BUK7E1R8-40E require a gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With 145 nC total gate charge and typical gate driver output impedance, a 5 Ω external resistor yields measured td(off) = 121 ns and tf = 83 ns. Lower values increase switching speed but risk ringing; values >10 Ω significantly increase switching losses.

Can this MOSFET replace older TO-220 devices like IRF3205 in automotive designs?

Yes-with caveats. Its 1.5 mΩ RDS(on) is ~50% lower than IRF3205's 8.0 mΩ, and its AEC-Q101 qualification and 175 °C rating exceed IRF3205's commercial specs. However, the I2PAK package requires different PCB footprint and thermal interface design-direct replacement demands mechanical and thermal revalidation.

BUK7E1R8-40E,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11340 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

BUK7E1R8-40E,127 FAQ

1.How can I place an order for BUK7E1R8-40E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7E1R8-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7E1R8-40E,127 reliable?

The price and inventory of BUK7E1R8-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E1R8-40E,127 is usually 5 days.

3.What payment methods are accepted for BUK7E1R8-40E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E1R8-40E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7E1R8-40E,127?

BUK7E1R8-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7E1R8-40E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7E1R8-40E,127?

For technical support, including BUK7E1R8-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E1R8-40E,127 requirements.

6.How does Aetrix verify that BUK7E1R8-40E,127 is sourced from the original manufacturer or authorized distributors?

All BUK7E1R8-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E1R8-40E,127 meets industry standards.

7.What is the process for return or replacement of BUK7E1R8-40E,127?

All BUK7E1R8-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E1R8-40E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7E1R8-40E,127 part is unused and in its original packaging.

Return procedure for BUK7E1R8-40E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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