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Nexperia USA Inc. BUK7E1R9-40E,127
- Part No.:
- BUK7E1R9-40E,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK7E1R9-40E,127.pdf
- Description:
- MOSFET N-CH 40V 120A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,708
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Product details
Overview
BUK7E1R9-40E from Nexperia is a standard-level N-channel TrenchMOS power FET in I2PAK (SOT226) package, rated for 40 V VDS, 1.5 mΩ RDS(on) at 10 V VGS and 25 A, 120 A continuous drain current at Tmb = 25 °C, and qualified to AEC-Q101 for automotive use. It serves as a high-current, thermally robust switching element in 12 V power distribution and motor control circuits.
For engineers reviewing the BUK7E1R9-40E datasheet, BUK7E1R9-40E pinout, BUK7E1R9-40E application, or BUK7E1R9-40E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, true standard-level gate threshold (>1 V at 175 °C), and mounting-base thermal resistance of 0.46 K/W - critical for high-reliability automotive power switching designs.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with standard gate drive compatibility (VGS(th) > 1 V at 175 °C), enabling direct interface with 5 V or 3.3 V microcontrollers without level shifting. Its internal drain and source inductances (LD = 2.5 nH, LS = 7.5 nH) are optimized for fast switching with minimal ringing in high-di/dt applications.
The device features a monolithic source-drain diode with 46 ns reverse recovery time and 62 nC recovered charge, supporting synchronous rectification and freewheeling in inductive loads. Thermal design is anchored to the mounting base (Tmb), with normalized power derating curves confirming stable operation up to 175 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum - defines safe blocking voltage in 12 V automotive systems with load-dump transients. |
| RDS(on) | 1.5 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1.5 W conduction loss at 55 A, critical for thermal management. |
| ID cont. | 120 A at Tmb = 25 °C - package-limited current capacity suitable for high-power solenoid and motor drivers. |
| EAS | 801 mJ non-repetitive avalanche energy - supports robustness against inductive switching spikes without external snubbers. |
| Rth(j-mb) | 0.46 K/W - allows direct heatsink mounting with predictable junction-to-heatsink thermal path for system-level thermal modeling. |
| QGD | 34.7 nC - determines Miller plateau duration and gate driver current demand during hard-switching transitions. |
| Tj max | 175 °C - enables operation in engine bay environments where ambient exceeds 125 °C. |
Pinout & Package
I2PAK (SOT226) plastic single-ended package with isolated mounting base connected internally to the drain terminal; requires mechanical clamping and thermal interface material for heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Standard-level MOSFET control input; threshold >1 V at 175 °C ensures reliable turn-on with 5 V logic. |
| 2 (D) | Drain | Main high-side or low-side power path; electrically tied to mounting base for low-inductance, high-current return path. |
| 3 (S) | Source | Power return node; referenced for gate drive; forms cathode of integrated body diode for freewheeling. |
| Mounting Base (mb) | Drain Terminal Extension | Thermally conductive metal surface for heatsink attachment; must be electrically isolated from PCB ground unless drain is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
| Repetitive avalanche rating | Enables sustained operation under unclamped inductive switching events without degradation, reducing need for external protection. |
| 175 °C junction rating | Supports placement in high-temperature zones (e.g., near engines or inverters) without derating penalties beyond thermal resistance limits. |
| True standard-level gate | VGS(th) > 1 V at 175 °C ensures guaranteed turn-on with industry-standard 5 V microcontroller outputs across full temperature range. |
| Low RDS(on) × QG figure-of-merit | Combined 1.5 mΩ / 118 nC ratio balances conduction and switching losses for high-efficiency 12 V DC-DC and motor drives. |
Applications
| Electric Power Steering (EPS) | Start-Stop Micro-Hybrid Control |
|---|---|
|
Use Scenario: High-current H-bridge driver for 12 V EPS motor with peak currents >80 A and frequent directional reversals. IC Role / Device Role / Timing Role: Low-side and high-side switching element in dual-phase motor driver stage, handling bidirectional current with fast turn-off (52 ns fall time). Use Value: 1.5 mΩ RDS(on) minimizes heat generation during sustained assist torque; 175 °C rating prevents thermal shutdown during extended parking maneuvers. |
Use Scenario: Intelligent battery disconnect switch managing cranking-to-run transition in 12 V start-stop systems. IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlling main battery feed to starter relay and DC-DC converter. Use Value: 801 mJ avalanche energy absorbs load-dump transients during alternator regulation faults; AEC-Q101 qualification ensures lifetime reliability over 15-year vehicle service life. |
| Transmission Solenoid Driver | 12 V LED Headlamp Dimming |
|
Use Scenario: PWM-controlled proportional pressure valve solenoid in automatic transmission hydraulic control module. IC Role / Device Role / Timing Role: Low-side switch modulating 5–10 A solenoid current at 100–500 Hz with precise duty-cycle control. Use Value: 34.7 nC QGD enables clean, jitter-free PWM edges; integrated body diode (46 ns trr) provides fast freewheeling without external Schottky. |
Use Scenario: High-side dimming switch for adaptive LED headlamps requiring >30 A peak current and thermal resilience in sealed housings. IC Role / Device Role / Timing Role: High-side power FET controlled via isolated gate driver, delivering variable brightness through PWM or analog dimming. Use Value: 0.46 K/W Rth(j-mb) allows direct heatsink mounting behind lamp housing; 120 A rating supports future higher-lumen LED arrays without redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ RDS(on), 175 °C, but uses SuperSO8 package with higher Rth(j-a) (3.5 K/W) and no mounting base. | Limited to lower-power PCB-mounted applications; unsuitable for >60 A continuous due to thermal constraints. | Select when space-constrained PCB layout prioritizes footprint over thermal performance. |
| IRFB4115PBF | 150 V, 4.5 mΩ RDS(on), TO-220 package, not AEC-Q101 qualified; higher VDS margin but lower current density. | Acceptable for industrial 12 V systems but lacks automotive qualification and thermal robustness at 175 °C. | Select only for non-automotive, cost-sensitive designs where AEC-Q101 is not mandated. |
Compared with STL220N4F7AG and IRFB4115PBF, BUK7E1R9-40E uniquely combines AEC-Q101 compliance, 1.5 mΩ on-resistance, and 0.46 K/W junction-to-mounting-base thermal resistance - making it the only option qualified for thermally demanding, high-current automotive power switching where reliability and thermal headroom are non-negotiable.
Availability
BUK7E1R9-40E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission solenoid driver applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for BUK7E1R9-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
BUK7E1R9-40E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V power distribution and motor control in modern vehicles.
FAQ
Is BUK7E1R9-40E suitable for high-side switching configurations?
Yes - its standard-level gate threshold (>1 V at 175 °C) and 40 V VDS rating support high-side use with bootstrap or isolated gate drivers. The mounting base is internally connected to drain, so mechanical isolation from heatsink is required unless the drain node is at system ground potential.
What is the maximum recommended gate resistor value for 100 kHz PWM operation?
Based on QG(tot) = 118 nC and typical gate driver output impedance, a 5 Ω external gate resistor achieves optimal trade-off between switching speed (td(on)/td(off) < 100 ns) and EMI suppression. Values above 10 Ω significantly increase switching losses without meaningful noise reduction in automotive 12 V systems.
Does the integrated body diode support synchronous rectification?
Yes - the source-drain diode has 46 ns reverse recovery time and 62 nC recovered charge, enabling efficient synchronous rectification in buck converters and motor freewheeling paths. However, its forward voltage (0.79 V at 25 A, 25 °C) is higher than discrete Schottky diodes, so efficiency gains depend on operating frequency and current profile.
How does the 175 °C rating affect PCB layout requirements?
The 175 °C rating permits operation in high-ambient zones, but thermal design must prioritize mounting base conduction: use ≥25 mm² copper pour under the base, ≥25 µm thermal interface material, and mechanical clamping force ≥20 N. Standard FR-4 PCB traces alone cannot sustain >10 A continuous without violating temperature limits.
BUK7E1R9-40E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 118 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 324W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK7E1R9-40E,127 FAQ
1.How can I place an order for BUK7E1R9-40E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7E1R9-40E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7E1R9-40E,127 reliable?
The price and inventory of BUK7E1R9-40E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E1R9-40E,127 is usually 5 days.
3.What payment methods are accepted for BUK7E1R9-40E,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E1R9-40E,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK7E1R9-40E,127?
BUK7E1R9-40E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7E1R9-40E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7E1R9-40E,127?
For technical support, including BUK7E1R9-40E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E1R9-40E,127 requirements.
6.How does Aetrix verify that BUK7E1R9-40E,127 is sourced from the original manufacturer or authorized distributors?
All BUK7E1R9-40E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E1R9-40E,127 meets industry standards.
7.What is the process for return or replacement of BUK7E1R9-40E,127?
All BUK7E1R9-40E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E1R9-40E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7E1R9-40E,127 part is unused and in its original packaging.
Return procedure for BUK7E1R9-40E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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