Nexperia USA Inc. BUK7E2R6-60E,127

Overview

BUK7E2R6-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in I2PAK (SOT226) package, rated for 60 V V_DS, 2.1 mΩ R_DS(on) at 10 V V_GS and 25 A, and 175 °C junction operation-designed for high-reliability automotive power switching in electric power steering and start-stop micro-hybrid systems.

For engineers reviewing the BUK7E2R6-60E datasheet, BUK7E2R6-60E pinout, BUK7E2R6-60E application, or BUK7E2R6-60E equivalent, this page delivers verified electrical parameters, thermal performance data, avalanche ruggedness metrics, and automotive-grade qualification context to support robust system-level design and component selection.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance with true standard-level gate drive compatibility-V_GS(th) remains >1 V even at 175 °C, enabling reliable turn-on with conventional 10 V gate drivers. Its repetitive avalanche rating (660 mJ unclamped) and 120 A continuous drain current (limited by package thermal capacity) support fault-tolerant operation in transient-heavy automotive loads.

The device integrates a monolithic source-drain diode with 54 ns reverse recovery time and 89 nC recovered charge, optimized for synchronous rectification and inductive load control. Thermal resistance from junction to mounting base is 0.43 K/W, enabling high-power dissipation when mounted on thermally conductive heatsinks.

Key Specifications

Pinout & Package

Package: I2PAK (SOT226), also known as TO-262-a plastic single-ended 3-lead power package with isolated mounting base electrically connected to the drain terminal. Dimensions: 15.0 × 10.3 × 4.5 mm (L × W × H), with 2.54 mm lead pitch and 13.5 mm lead length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N6F7 and IRF1404ZLPbF, the BUK7E2R6-60E offers superior thermal performance (0.43 K/W vs. ≥0.55 K/W), tighter V_GS(th) stability at high temperature, and documented repetitive avalanche capability-making it the preferred choice for thermally demanding, safety-critical automotive power stages.

Availability

BUK7E2R6-60E is available at Aetrix Electronics and suitable for electric power steering, start-stop micro-hybrid control, and transmission valve actuation requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for BUK7E2R6-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components-including MOSFETs, diodes, ESD protection, and logic-originally spun off from Philips and now part of Wingtech Technology.

The BUK7E series belongs to Nexperia's automotive-qualified TrenchMOS portfolio, engineered specifically for high-current, high-temperature switching in 12 V automotive subsystems where reliability, thermal resilience, and avalanche robustness are non-negotiable.

FAQ

Is BUK7E2R6-60E suitable for high-frequency PWM applications above 100 kHz?

No-its 45.5 nC Q_GD and 158 nC Q_G(tot) result in elevated switching losses above 50 kHz. It is optimized for 1–20 kHz automotive power switching (e.g., solenoids, EPS motor phases). For >100 kHz, consider Nexperia's NextPower series with lower Q_GD and enhanced dV/dt immunity.

Can the mounting base be left electrically floating?

No-the mounting base is internally connected to the drain terminal (Pin 2). Leaving it unconnected creates a parasitic capacitance path and risks voltage breakdown. It must be either bolted to a heatsink (with appropriate insulation if drain is not at heatsink potential) or soldered to a copper pour tied to drain net.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At T_mb = 100 °C, continuous drain current is capped at 120 A per Fig. 1, but SOA is further limited by pulse width and V_DS. For 10 ms pulses, max ID is ~200 A at V_DS = 20 V (Fig. 4). Derating is required above 100 °C due to reduced thermal headroom and increased R_DS(on).

Does BUK7E2R6-60E include integrated ESD protection on the gate?

Yes-it features built-in gate oxide protection rated to ±20 V V_GS (per Table 5), meeting AEC-Q101 human-body model (HBM) requirements. However, external gate resistors (≥10 Ω) and Zener clamps are still recommended in noisy automotive environments to suppress coupled transients.