NXP Semiconductors BUK7E2R7-30B,127

Overview

BUK7E2R7-30B from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS standard-level power MOSFET in I2PAK (SOT226) package, rated for 30 V V_DS, 2.3 mΩ R_DS(on) at 10 V V_GS and 25 A, and 175 °C junction temperature - designed for high-current 12 V automotive load switching including motors, lamps, and solenoids.

For engineers reviewing the BUK7E2R7-30B datasheet, BUK7E2R7-30B pinout, BUK7E2R7-30B application, or BUK7E2R7-30B equivalent, this page delivers verified electrical specs, thermal performance data, mounting-base–referenced thermal resistance (0.5 K/W), avalanche energy rating (2.3 J), and real-world design context for thermally demanding automotive power switching.

Technical Context

This device uses TrenchMOS technology to achieve low on-state resistance while maintaining robust gate oxide integrity and stable threshold voltage across -55 °C to +175 °C. Its standard-level gate drive compatibility (V_GS(th) = 2–4 V typ.) enables direct interfacing with 5 V and 3.3 V microcontrollers without level-shifting.

The integrated source-drain diode supports freewheeling in inductive loads, with 0.85–1.2 V forward voltage at 40 A and 88 ns reverse recovery time. Its unclamped avalanche capability (2.3 J at 75 A) provides transient overvoltage resilience in motor-control and solenoid-drive circuits.

Key Specifications

Pinout & Package

Package: I2PAK (SOT226), plastic single-ended TO-262 variant with isolated mounting base electrically connected to drain. Requires thermal interface material and mechanical clamping for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N3LLH6 and IRF1404ZPBF, BUK7E2R7-30B uniquely combines AEC-Q101 qualification, 175 °C operation, 2.3 mΩ on-resistance, and 0.5 K/W thermal resistance - making it the only option among the three validated for thermally aggressive automotive power switching with zero derating at 125 °C ambient.

Availability

BUK7E2R7-30B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V electric power steering auxiliary loads, and commercial vehicle starter relay replacements requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK7E2R7-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BUK7E2R7-30B belongs to Nexperia's TrenchMOS automotive-qualified power MOSFET family, engineered specifically for robust, low-loss 12 V load switching in harsh under-hood and chassis-mounted environments.

FAQ

What is the maximum continuous drain current for BUK7E2R7-30B at 100 °C mounting base temperature?

The BUK7E2R7-30B supports 75 A continuous drain current at T_mb = 25 °C, but this is package-limited and decreases with rising temperature. At T_mb = 100 °C, the normalized current drops to approximately 45 A per Figure 1 in the datasheet - confirming that thermal management of the mounting base is essential to sustain high current in real-world applications.

Is BUK7E2R7-30B suitable for high-frequency PWM motor control above 20 kHz?

Yes, BUK7E2R7-30B supports high-frequency PWM operation due to its 91 nC total gate charge and low output capacitance (C_oss = 1691–2029 pF). With appropriate gate driver strength (e.g., >5 A peak), it achieves 107 ns rise time and 118 ns fall time, enabling clean switching up to 20–50 kHz in 12 V brushed DC motor control without excessive switching loss.

Does BUK7E2R7-30B have an integrated body diode, and what are its key parameters?

Yes, BUK7E2R7-30B includes an integrated source-drain diode optimized for freewheeling. At 40 A and 25 °C, V_SD is 0.85–1.2 V; reverse recovery time t_rr is 88 ns with recovered charge Q_r = 132 nC - enabling efficient inductive load commutation with minimal voltage overshoot when used with proper layout and gate control.

What is the gate-source voltage limit for BUK7E2R7-30B, and why does it matter for MCU interfacing?

The BUK7E2R7-30B has a V_GS rating of ±20 V. Its V_GS(th) range (2–4 V typ.) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, while the ±20 V absolute maximum prevents gate oxide damage during transient coupling - critical in noisy automotive environments where ESD or load dump may induce gate spikes.

How does the mounting base connection affect PCB layout for BUK7E2R7-30B?

The mounting base of BUK7E2R7-30B is electrically connected to the drain (Pin 2), so PCB layout must isolate the base from ground planes unless the system design intentionally references the drain to chassis. Thermal vias under the base pad and solder mask-defined copper area are required to achieve the specified 0.5 K/W R_th(j-mb) - improper isolation or insufficient copper will cause thermal runaway at high current.