Nexperia USA Inc. BUK7E3R5-60E,127

Overview

BUK7E3R5-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS standard-level power MOSFET in I2PAK (SOT226) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 2.6 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers ultra-low on-resistance for high-efficiency 12 V automotive power switching in thermally demanding environments up to 175 °C junction temperature.

For engineers reviewing the BUK7E3R5-60E datasheet, BUK7E3R5-60E pinout, BUK7E3R5-60E application, or BUK7E3R5-60E equivalent, key selection criteria include its true standard-level gate (V_GS(th) > 1 V at 175 °C), repetitive avalanche rating, 404 mJ single-pulse avalanche energy, and mounting-base thermal resistance of 0.51 K/W - critical for Start-Stop micro-hybrid and transmission control designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining robustness under high-current transients and elevated temperatures. Its gate threshold voltage remains functional above 1 V even at 175 °C, enabling reliable turn-on with standard 5 V or 12 V logic drivers without level-shifting.

The device integrates a monolithic source-drain diode with 42.1 ns reverse recovery time and 59.3 nC recovered charge, supporting synchronous rectification and freewheeling in inductive load circuits. Its 0.51 K/W R_th(j-mb) enables high-power operation when mounted on a thermally optimized PCB copper plane or heatsink.

Key Specifications

Pinout & Package

The BUK7E3R5-60E is housed in an I2PAK (SOT226) plastic single-ended package with exposed mounting base electrically connected to the drain. The package features low-profile 3-lead construction optimized for high-power surface-mount or through-hole mounting with direct thermal path to PCB copper or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N6F7 and IRF1404ZPBF, the BUK7E3R5-60E uniquely combines AEC-Q101 qualification, 60 V rating with load-dump margin, and 2.6 mΩ R_DS(on) in a thermally optimized SOT226 package - making it the only drop-in solution for production automotive power switching where reliability, thermal performance, and regulatory compliance are jointly required.

Availability

BUK7E3R5-60E is available at Aetrix Electronics and suitable for automotive Start-Stop systems, transmission control modules, and 12 V motor drives requiring stable component supply across multi-year vehicle production cycles.

Supply support for BUK7E3R5-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with deep expertise in automotive and industrial power management.

The BUK7E series is part of Nexperia's AEC-Q101-qualified TrenchMOS portfolio, engineered specifically for high-current, high-temperature automotive power switching where robustness, low R_DS(on), and repeatable avalanche performance are mandatory.

FAQ

Is BUK7E3R5-60E suitable for high-frequency PWM applications above 50 kHz?

Yes - with 28 ns turn-on delay, 45 ns rise time, and 34.8 nC Q_GD, the device supports efficient switching up to 100 kHz in hard-switched topologies. However, gate driver strength must exceed 2 A peak to minimize switching losses; layout must minimize source inductance (LS = 7.5 nH) to prevent oscillation.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is capped at 120 A regardless of mounting base temperature due to package limitation. At T_mb = 100 °C, the device sustains 120 A only if junction temperature remains ≤175 °C - requiring thermal design that maintains R_th(j-mb) ≤0.51 K/W and sufficient heatsinking.

Does the mounting base require electrical isolation from the PCB ground plane?

No - the mounting base is electrically connected to the drain (pin 2). If used in high-side configuration, the base must be isolated from system ground; if used in low-side configuration, the base connects directly to power ground. Thermal interface material must maintain appropriate dielectric strength for the application's voltage isolation requirements.

Can BUK7E3R5-60E replace older BUZ70 or BUK92xx devices in existing designs?

It can serve as a functional upgrade: same SOT226 package, higher current rating (120 A vs. 75–90 A), lower R_DS(on) (2.6 mΩ vs. 3.5–5.5 mΩ), and improved avalanche ruggedness (404 mJ vs. ~200 mJ). Layout is pin-compatible, but gate drive timing and thermal management should be re-validated due to higher peak currents and faster switching.