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NXP Semiconductors BUK7E4R0-80E,127

Part No.:
BUK7E4R0-80E,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixBUK7E4R0-80E,127.pdf
Description:
MOSFET N-CH 80V 120A I2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,955

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Product details

Overview

BUK7E4R0-80E,127 from Nexperia is a 80 V, 4.0 mΩ RDS(on) logic-level N-channel TrenchMOS power transistor in SOT404 (D2PAK) package, rated for continuous drain current up to 120 A at Tc = 25 °C and optimized for high-efficiency DC-DC conversion and motor control in automotive body electronics.

For engineers reviewing the BUK7E4R0-80E,127 datasheet, BUK7E4R0-80E,127 pinout, BUK7E4R0-80E,127 application, or BUK7E4R0-80E,127 equivalent, key selection criteria include its 80 V VDSS, 4.0 mΩ RDS(on) @ VGS = 10 V, 120 A ID rating, SOA compliance per JEDEC JESD24-1, and AEC-Q101 qualification for automotive use.

Technical Context

This device employs Nexperia's TrenchMOS technology with optimized cell pitch and gate oxide design to achieve low on-resistance while maintaining robust avalanche capability (EAS = 420 mJ at Tj = 25 °C). It features a fully isolated TO-263 (SOT404) thermally enhanced package with copper leadframe for low thermal resistance (RthJC = 0.9 K/W).

The BUK7E4R0-80E,127 operates as a unidirectional, enhancement-mode switch with threshold voltage VGS(th) between 1.0 V and 2.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate drivers. Its safe operating area supports pulsed currents up to 480 A under defined conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS80 V - Maximum drain-source blocking voltage; suitable for 48 V automotive systems and industrial 24–48 V rails.
RDS(on) @ VGS = 10 V4.0 mΩ - Enables <1 W conduction loss at 50 A, critical for high-current switching efficiency.
ID (continuous, Tc = 25 °C)120 A - Supports high-power load switching without external heatsinking at moderate duty cycles.
VGS(th)1.0–2.5 V - Ensures reliable turn-on with standard logic-level MCU GPIOs (3.3 V/5 V).
EAS420 mJ - Confirmed single-pulse avalanche energy; allows operation in inductive switching without snubbers.
RthJC0.9 K/W - Low junction-to-case thermal resistance enables efficient heat transfer to PCB copper or heatsink.
AEC-Q101Qualified - Validated for automotive applications including engine control modules and body controllers.

Pinout & Package

SOT404 (D2PAK) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), TO-263 outline, 10.0 mm × 12.1 mm footprint, 2.3 mm height.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives logic-level voltage to modulate channel conductivity; requires <10 nC total gate charge for fast switching.
D (Drain)High-side power outputConnected to load supply rail; electrically and thermally tied to exposed metal tab for low-inductance, high-current path.
S (Source)Power return / referenceCommon return node for load current; referenced to system ground in low-side switch configurations.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, eliminating need for level-shifting or dedicated gate drivers in 5 V systems.
Thermally robust SOT404 packageExposed drain pad provides <0.9 K/W RthJC, enabling >100 W dissipation with minimal PCB copper area.
100 % avalanche testedEvery unit validated for EAS ≥ 420 mJ, ensuring reliability in inductive load switching (e.g., solenoids, motors).
Low gate charge (Qg = 100 nC)Reduces switching losses and driver power requirements in PWM applications up to 100 kHz.
AEC-Q101 qualifiedValidated across temperature (-55 °C to +175 °C), humidity, vibration, and lifetime stress tests per automotive standards.

Applications

Automotive Body Control ModuleIndustrial DC Motor Driver

Use Scenario: Switching 12 V/24 V loads such as door locks, seat adjusters, and HVAC actuators in BCMs.

IC Role / Device Role / Timing Role: High-current, low-side power switch controlled by 3.3 V MCU GPIO with integrated overtemperature protection.

Use Value: 4.0 mΩ RDS(on) minimizes voltage drop and self-heating during sustained 30–60 A actuator pulses.

Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor drives for conveyors and pumps.

IC Role / Device Role / Timing Role: Unidirectional power switch with fast turn-on (ton = 22 ns) and controlled dV/dt for EMI reduction.

Use Value: 120 A ID rating and 420 mJ EAS support stall-current surges without failure.

Server PSU OR-ing FETLED Streetlight Driver

Use Scenario: Hot-swap and redundancy control in 48 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Low-loss, bidirectionally blocked MOSFET used in ideal diode configuration with external controller.

Use Value: 80 V VDSS provides 20 % margin above 48 V nominal, while 4.0 mΩ ensures <200 mW conduction loss at 70 A.

Use Scenario: Constant-current switching element in high-power LED drivers for outdoor lighting.

IC Role / Device Role / Timing Role: PWM-controlled power switch regulating LED string current up to 10 A average.

Use Value: AEC-Q101 qualification ensures long-term reliability under outdoor thermal cycling (-40 °C to +85 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7AG60 V VDSS, 2.2 mΩ RDS(on), PowerFLAT 8x8 package, RthJC = 1.2 K/WLimited to ≤60 V systems; lower RDS(on) but higher thermal resistance reduces usable current at high TcSelect when 60 V rating suffices and board space constraints favor smaller 8x8 mm footprint.
IRF1404ZLPbF40 V VDSS, 4.7 mΩ RDS(on), TO-220AB package, RthJC = 1.0 K/W, not AEC-Q101 qualifiedNot suitable for 48 V automotive; lacks automotive qualification and has higher RDS(on) at same VGSConsider only for cost-sensitive industrial 24 V non-automotive designs where qualification is not required.

Compared with STL220N6F7AG and IRF1404ZLPbF, the BUK7E4R0-80E,127 uniquely combines 80 V rating, 4.0 mΩ on-resistance, AEC-Q101 qualification, and SOT404 thermal performance-making it the only option validated for high-current 48 V automotive body electronics with minimal layout overhead.

Availability

BUK7E4R0-80E,127 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server power supply OR-ing circuits, and high-power LED lighting requiring stable component supply and full traceability.

Supply support for BUK7E4R0-80E,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-performance discrete, logic, and MOSFET semiconductors, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.

The BUK7E series is part of Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust, high-current switching in harsh-environment automotive and industrial applications where reliability, thermal performance, and qualification compliance are mandatory.

FAQ

What is the maximum continuous drain current rating for the BUK7E4R0-80E,127?

The BUK7E4R0-80E,127 is rated for 120 A continuous drain current at case temperature Tc = 25 °C, as specified in the official Nexperia datasheet revision dated 11 September 2012. Derating applies above 25 °C; at Tc = 100 °C, the maximum ID drops to approximately 60 A due to thermal limits. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature below 175 °C.

Is the BUK7E4R0-80E,127 suitable for 48 V automotive applications?

Yes, the BUK7E4R0-80E,127 is explicitly qualified for automotive use under AEC-Q101 and features an 80 V VDSS rating-providing 67 % headroom above nominal 48 V systems. Its SOA, avalanche capability (EAS = 420 mJ), and operating temperature range (−55 °C to +175 °C) meet stringent automotive requirements for body electronics, including load-dump and jump-start transient immunity.

What package type does the BUK7E4R0-80E,127 use, and how is thermal management achieved?

The BUK7E4R0-80E,127 uses the SOT404 (D2PAK) package, which is identical to TO-263. Thermal management relies on the exposed drain pad soldered directly to a large PCB copper pour or heatsink, achieving a junction-to-case thermal resistance (RthJC) of 0.9 K/W. This enables effective heat extraction without additional mechanical fasteners, supporting >100 W power dissipation in well-designed layouts.

Does the BUK7E4R0-80E,127 require a gate driver IC?

No, the BUK7E4R0-80E,127 is a logic-level MOSFET with VGS(th) spanning 1.0 V to 2.5 V and full enhancement at VGS ≥ 4.5 V. It can be driven directly by 3.3 V or 5 V microcontroller GPIOs. However, for high-frequency PWM (>50 kHz) or high-current gate charging, a low-impedance driver improves switching speed and reduces losses-though not strictly required for basic on/off control.

What is the total gate charge (Qg) specification for the BUK7E4R0-80E,127?

The BUK7E4R0-80E,127 has a typical total gate charge (Qg) of 100 nC at VGS = 10 V, as confirmed in the Nexperia datasheet. This value determines the energy required to switch the device and influences driver sizing and switching loss calculations. Qg remains stable across temperature and is measured under standardized test conditions (VDS = 40 V, ID = 60 A).

BUK7E4R0-80E,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
169 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
12030 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
349W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

BUK7E4R0-80E,127 FAQ

1.How can I place an order for BUK7E4R0-80E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK7E4R0-80E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK7E4R0-80E,127 reliable?

The price and inventory of BUK7E4R0-80E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E4R0-80E,127 is usually 5 days.

3.What payment methods are accepted for BUK7E4R0-80E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E4R0-80E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK7E4R0-80E,127?

BUK7E4R0-80E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK7E4R0-80E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK7E4R0-80E,127?

For technical support, including BUK7E4R0-80E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E4R0-80E,127 requirements.

6.How does Aetrix verify that BUK7E4R0-80E,127 is sourced from the original manufacturer or authorized distributors?

All BUK7E4R0-80E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E4R0-80E,127 meets industry standards.

7.What is the process for return or replacement of BUK7E4R0-80E,127?

All BUK7E4R0-80E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E4R0-80E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK7E4R0-80E,127 part is unused and in its original packaging.

Return procedure for BUK7E4R0-80E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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