NXP Semiconductors BUK7E4R0-80E,127
- Part No.:
- BUK7E4R0-80E,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK7E4R0-80E,127.pdf
- Description:
- MOSFET N-CH 80V 120A I2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK7E4R0-80E,127 from Nexperia is a 80 V, 4.0 mΩ RDS(on) logic-level N-channel TrenchMOS power transistor in SOT404 (D2PAK) package, rated for continuous drain current up to 120 A at Tc = 25 °C and optimized for high-efficiency DC-DC conversion and motor control in automotive body electronics.
For engineers reviewing the BUK7E4R0-80E,127 datasheet, BUK7E4R0-80E,127 pinout, BUK7E4R0-80E,127 application, or BUK7E4R0-80E,127 equivalent, key selection criteria include its 80 V VDSS, 4.0 mΩ RDS(on) @ VGS = 10 V, 120 A ID rating, SOA compliance per JEDEC JESD24-1, and AEC-Q101 qualification for automotive use.
Technical Context
This device employs Nexperia's TrenchMOS technology with optimized cell pitch and gate oxide design to achieve low on-resistance while maintaining robust avalanche capability (EAS = 420 mJ at Tj = 25 °C). It features a fully isolated TO-263 (SOT404) thermally enhanced package with copper leadframe for low thermal resistance (RthJC = 0.9 K/W).
The BUK7E4R0-80E,127 operates as a unidirectional, enhancement-mode switch with threshold voltage VGS(th) between 1.0 V and 2.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without gate drivers. Its safe operating area supports pulsed currents up to 480 A under defined conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Maximum drain-source blocking voltage; suitable for 48 V automotive systems and industrial 24–48 V rails. |
| RDS(on) @ VGS = 10 V | 4.0 mΩ - Enables <1 W conduction loss at 50 A, critical for high-current switching efficiency. |
| ID (continuous, Tc = 25 °C) | 120 A - Supports high-power load switching without external heatsinking at moderate duty cycles. |
| VGS(th) | 1.0–2.5 V - Ensures reliable turn-on with standard logic-level MCU GPIOs (3.3 V/5 V). |
| EAS | 420 mJ - Confirmed single-pulse avalanche energy; allows operation in inductive switching without snubbers. |
| RthJC | 0.9 K/W - Low junction-to-case thermal resistance enables efficient heat transfer to PCB copper or heatsink. |
| AEC-Q101 | Qualified - Validated for automotive applications including engine control modules and body controllers. |
Pinout & Package
SOT404 (D2PAK) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), TO-263 outline, 10.0 mm × 12.1 mm footprint, 2.3 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives logic-level voltage to modulate channel conductivity; requires <10 nC total gate charge for fast switching. |
| D (Drain) | High-side power output | Connected to load supply rail; electrically and thermally tied to exposed metal tab for low-inductance, high-current path. |
| S (Source) | Power return / reference | Common return node for load current; referenced to system ground in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for level-shifting or dedicated gate drivers in 5 V systems. |
| Thermally robust SOT404 package | Exposed drain pad provides <0.9 K/W RthJC, enabling >100 W dissipation with minimal PCB copper area. |
| 100 % avalanche tested | Every unit validated for EAS ≥ 420 mJ, ensuring reliability in inductive load switching (e.g., solenoids, motors). |
| Low gate charge (Qg = 100 nC) | Reduces switching losses and driver power requirements in PWM applications up to 100 kHz. |
| AEC-Q101 qualified | Validated across temperature (-55 °C to +175 °C), humidity, vibration, and lifetime stress tests per automotive standards. |
Applications
| Automotive Body Control Module | Industrial DC Motor Driver |
|---|---|
Use Scenario: Switching 12 V/24 V loads such as door locks, seat adjusters, and HVAC actuators in BCMs. IC Role / Device Role / Timing Role: High-current, low-side power switch controlled by 3.3 V MCU GPIO with integrated overtemperature protection. Use Value: 4.0 mΩ RDS(on) minimizes voltage drop and self-heating during sustained 30–60 A actuator pulses. | Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor drives for conveyors and pumps. IC Role / Device Role / Timing Role: Unidirectional power switch with fast turn-on (ton = 22 ns) and controlled dV/dt for EMI reduction. Use Value: 120 A ID rating and 420 mJ EAS support stall-current surges without failure. |
| Server PSU OR-ing FET | LED Streetlight Driver |
Use Scenario: Hot-swap and redundancy control in 48 V intermediate bus architectures. IC Role / Device Role / Timing Role: Low-loss, bidirectionally blocked MOSFET used in ideal diode configuration with external controller. Use Value: 80 V VDSS provides 20 % margin above 48 V nominal, while 4.0 mΩ ensures <200 mW conduction loss at 70 A. | Use Scenario: Constant-current switching element in high-power LED drivers for outdoor lighting. IC Role / Device Role / Timing Role: PWM-controlled power switch regulating LED string current up to 10 A average. Use Value: AEC-Q101 qualification ensures long-term reliability under outdoor thermal cycling (-40 °C to +85 °C ambient). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V VDSS, 2.2 mΩ RDS(on), PowerFLAT 8x8 package, RthJC = 1.2 K/W | Limited to ≤60 V systems; lower RDS(on) but higher thermal resistance reduces usable current at high Tc | Select when 60 V rating suffices and board space constraints favor smaller 8x8 mm footprint. |
| IRF1404ZLPbF | 40 V VDSS, 4.7 mΩ RDS(on), TO-220AB package, RthJC = 1.0 K/W, not AEC-Q101 qualified | Not suitable for 48 V automotive; lacks automotive qualification and has higher RDS(on) at same VGS | Consider only for cost-sensitive industrial 24 V non-automotive designs where qualification is not required. |
Compared with STL220N6F7AG and IRF1404ZLPbF, the BUK7E4R0-80E,127 uniquely combines 80 V rating, 4.0 mΩ on-resistance, AEC-Q101 qualification, and SOT404 thermal performance-making it the only option validated for high-current 48 V automotive body electronics with minimal layout overhead.
Availability
BUK7E4R0-80E,127 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server power supply OR-ing circuits, and high-power LED lighting requiring stable component supply and full traceability.
Supply support for BUK7E4R0-80E,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-performance discrete, logic, and MOSFET semiconductors, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.
The BUK7E series is part of Nexperia's TrenchMOS automotive power portfolio, engineered specifically for robust, high-current switching in harsh-environment automotive and industrial applications where reliability, thermal performance, and qualification compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for the BUK7E4R0-80E,127?
The BUK7E4R0-80E,127 is rated for 120 A continuous drain current at case temperature Tc = 25 °C, as specified in the official Nexperia datasheet revision dated 11 September 2012. Derating applies above 25 °C; at Tc = 100 °C, the maximum ID drops to approximately 60 A due to thermal limits. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature below 175 °C.
Is the BUK7E4R0-80E,127 suitable for 48 V automotive applications?
Yes, the BUK7E4R0-80E,127 is explicitly qualified for automotive use under AEC-Q101 and features an 80 V VDSS rating-providing 67 % headroom above nominal 48 V systems. Its SOA, avalanche capability (EAS = 420 mJ), and operating temperature range (−55 °C to +175 °C) meet stringent automotive requirements for body electronics, including load-dump and jump-start transient immunity.
What package type does the BUK7E4R0-80E,127 use, and how is thermal management achieved?
The BUK7E4R0-80E,127 uses the SOT404 (D2PAK) package, which is identical to TO-263. Thermal management relies on the exposed drain pad soldered directly to a large PCB copper pour or heatsink, achieving a junction-to-case thermal resistance (RthJC) of 0.9 K/W. This enables effective heat extraction without additional mechanical fasteners, supporting >100 W power dissipation in well-designed layouts.
Does the BUK7E4R0-80E,127 require a gate driver IC?
No, the BUK7E4R0-80E,127 is a logic-level MOSFET with VGS(th) spanning 1.0 V to 2.5 V and full enhancement at VGS ≥ 4.5 V. It can be driven directly by 3.3 V or 5 V microcontroller GPIOs. However, for high-frequency PWM (>50 kHz) or high-current gate charging, a low-impedance driver improves switching speed and reduces losses-though not strictly required for basic on/off control.
What is the total gate charge (Qg) specification for the BUK7E4R0-80E,127?
The BUK7E4R0-80E,127 has a typical total gate charge (Qg) of 100 nC at VGS = 10 V, as confirmed in the Nexperia datasheet. This value determines the energy required to switch the device and influences driver sizing and switching loss calculations. Qg remains stable across temperature and is measured under standardized test conditions (VDS = 40 V, ID = 60 A).
BUK7E4R0-80E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 169 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK7E4R0-80E,127 FAQ
1.How can I place an order for BUK7E4R0-80E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK7E4R0-80E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK7E4R0-80E,127 reliable?
The price and inventory of BUK7E4R0-80E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK7E4R0-80E,127 is usually 5 days.
3.What payment methods are accepted for BUK7E4R0-80E,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK7E4R0-80E,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK7E4R0-80E,127?
BUK7E4R0-80E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK7E4R0-80E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK7E4R0-80E,127?
For technical support, including BUK7E4R0-80E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK7E4R0-80E,127 requirements.
6.How does Aetrix verify that BUK7E4R0-80E,127 is sourced from the original manufacturer or authorized distributors?
All BUK7E4R0-80E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK7E4R0-80E,127 meets industry standards.
7.What is the process for return or replacement of BUK7E4R0-80E,127?
All BUK7E4R0-80E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK7E4R0-80E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK7E4R0-80E,127 part is unused and in its original packaging.
Return procedure for BUK7E4R0-80E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK7E4R0-80E,127 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

